MBRF2545CT Search Results

Contextual Info: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S chottky Pow er R ectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-sllicon power diode. S tate-of-the-art geometry features

MBRF2545CT

Contextual Info: MBRF2545CT Schottky Barrier Rectifier ITO-220AB PRV : 45 Volts Io : 25 Ampere 0.134 3.4 DIA. 0.113(3.0)DIA. FEATURES : * Highly Stable Oxide Passivated Junction 0.185(4.70)Max. 0.406(10.3)MAX . 0.112(2.85) 0.100(2.55) 0.124(3.16)Max. 0.272(6.9) 0.248(6.3)

Contextual Info: MBRF2535CT AND MBRF2545CT SCHOTTKY RECTIFIER VOLTAGE RANGE - 35 and 45 Volts CURRENT - 30 Amperes FEATURES Isolated plastic package has Underwriters Laboratory Flammability Classifi­ sifi- ^ cations 94V-0. Metal to silicon rectifier, majority carrier conduction

b2545g

Abstract: B2545 AKA b2545 b2545 transistor manual B2545G diode b2545G AKA MBRF2545CTG Silicon Controlled Rectifier Manual transistor manual B2545 221D
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b2545g

Abstract: B2545 AKA b2545 b2545G AKA B2545G diode B2545g SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2545CTG b2545 transistor manual MBRF2545CT
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

Contextual Info: SENSITRON MBRF2545CT SEMICONDUCTOR TECHNICAL DATA DATA SHEET 3281, REV. - MBRF2545CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Free-Wheeling diodes • Polarity battery protection Features: • • • • • • 150 °C TJ operation

Contextual Info: MBRF2545CT-Y thru MBRF25150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

b2545

Abstract: MBRF2545CT
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b2545

Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

Motorola b2545

Abstract: B2545 b2545 MOTOROLA 221D AN1040 MBRF2545CT
Contextual Info: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF2545CT The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features

b2545g

Abstract: B2545G diode b2545g aka B2545 AKA B2545g SCHOTTKY BARRIER RECTIFIER aka
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

MOTOROLA B2545

Abstract: b2545 MOTOROLA B2545
Contextual Info: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e ctifier The SW ITCHM O DE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-the-art geometry features

DVE 0121

Abstract: 221D-02
Contextual Info: Order this data sheet by MBRF2545CT/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M BRF2545CT SWITCHMODE Schottky Power R ectifiers M otorola P re ferre d D evice The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial

Schottky

Contextual Info: MBRF2545CT-Y thru MBRF25150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: SENSITRON MBRF2545CT SEMICONDUCTOR TECHNICAL DATA DATA SHEET 3281, REV. A MBRF2545CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Free-Wheeling diodes • Polarity battery protection Features: • • • • 150 °C TJ operation Center

B2545 AKA

Abstract: b2545g B2545 b2545g aka B2545G diode mbrf2545ctg
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b2545

Abstract: 221D AN1040 MBRF2545CT
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide

mbrf2545

Contextual Info: SENSITRON MBRF2545CT SEMICONDUCTOR TECHNICAL DATA DATA SHEET 3281, REV. - MBRF2545CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Free-Wheeling diodes • Polarity battery protection Features: • • • • • • 150 °C TJ operation

B2545

Abstract: 221D-03
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

Contextual Info: MOTOROLA feME ]> SEMICONDUCTOR b3 b 7 2 5 5 G G f i m D O 335 « H O T ? M O TO RO LA SC D I O M S / O P T O TECHNICAL DATA SW ITCHMODE Dual S ch o ttky Pow er R ectifiers MBRF2545CT 18 a M otorola Preferred Device • • • • • • Low Forw ard V oltage Drop

B2545

Abstract: Motorola b2545
Contextual Info: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features

Contextual Info: MBRF2535CT AND MBRF2545CT SCHOTTKY RECTIFIER VOLTAGE RANG E - 35 and 45 Volts C U RR EN T - 30.0 Amperes FEATURES Isolated plastic package has Underwriters Labora­ tory Flammability Classifi­ cations 94V -0 Metal to silicon rectifier, majority carrier conduction

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents