MBRS130L Search Results

403A-03

Abstract: MBRS130LT3 CASE 403A MBRS130LT3 marking
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon

1bl3

Contextual Info: MBRS130L PA.RCH.LD s e m i c o n d u c t o r Tm DISCRETt ECH°nW0 L 0 “ eSSIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high

diode 1bl3

Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: Bulletin PD-20588 rev. A 09/01 MBRS130LTR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBRS130LTR Units The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small

MBRS130LTRPBF

Abstract: AN-994
Contextual Info: Bulletin PD-20403 07/04 MBRS130LTRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C

mic29152bu

Abstract: 118k 100uF 10v MIC29152 transistor c111 C105 Diode transistor c106 transistor C110 22uf 350v C106
Contextual Info: 3.3V and 2.7V Palm-Top Supply • • • • VSOURCE C105 22uF 35V + C142 0.1uF R84 10.0k 1% R85 20.0k 1% 1,2,9 20 11 R87 SUSPDIS SW VCC3 D3 MBRS130L Sync FB 4-7 R86 33.2k 1% + C107 100uF 10V 12 R89 20.0k 1% 2 R142 2M 19 14-17 13 Input R88 10k 1% PGND Bias

Contextual Info: Bulletin PD-20588 rev. C 05/02 MBRS130LTR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBRS130LTR Units The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop

1bl3

Abstract: diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D
Contextual Info: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: VS-MBRS130LTRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode

Contextual Info: MBRS130LT3 SCHOTTKY BARRIER RECTIFIER Schottky Power Rectifier Surface Mount Power Package SMB DO-214AA 1.1 ± 0 .3 4 .8 ± 0 .1 5 5 .4 ± 0 .1 5 Employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry

1BL3 marking code

Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
Contextual Info: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*

Contextual Info: VS-MBRS130LTRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode

Contextual Info: Bulletin PD-20403 07/04 MBRS130LTRPbF SCHOTTKY RECTIFIER 1 Amp IF AV = 1.0 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units IF(AV) Rectangular waveform 1.0 A VRRM 30 V IFSM @ tp= 5 µs sine 230 A VF @ 1.0Apk, TJ= 125°C

AN-994

Abstract: MBRS130LTR
Contextual Info: Bulletin PD-20588 rev. B 02/02 MBRS130LTR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBRS130LTR Units The MBRS130LTR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small

403A-03

Abstract: MBRS130LT3 MBRS1100T3
Contextual Info: SMB Devices Maximum die size 64 mil x 64 mil CASE 403A-03 Rectifiers — Schottky Device MBRS130LT3 MBRS140T3 MBRS1100T3 V rrm Volts k> Amps •fsm Amps Vf @25°C Volts lR @ 25°C mA 30 40 100 1 1 1 40 40 40 0.395 0.600 0.750 1.000 1.000 0.500 V rrm Volts

BRS130LT3

Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MBRS130LT3 S ch o ttky Pow er R e ctifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal-to-silicon

MBRS340T3G

Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
Contextual Info: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG

Contextual Info: MBRS130LTRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode

95029

Abstract: schottky diode SMB marking code 120
Contextual Info: MBRS130LTRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable RoHS • Very low forward voltage drop COMPLIANT • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability

Contextual Info: VS-MBRS130LTRPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable Cathode • Very low forward voltage drop Anode • High frequency operation • Guard ring for enhanced ruggedness and long term

Contextual Info: VS-MBRS130L-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable Cathode • Very low forward voltage drop Anode • High frequency operation • Guard ring for enhanced ruggedness and long

1bl3 motorola

Abstract: diode 1bl3 MBRS130LT3 1bl3 on 1bl3 MBRS130LT3 marking schottky power rectifier MOTOROLA motorola diode device data diode 1bl3 141
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon

1bl3 motorola

Abstract: diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA
Contextual Info: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with