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    MBRS140T3 Price and Stock

    onsemi MBRS140T3G

    DIODE SCHOTTKY 40V 1A SMB
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    DigiKey MBRS140T3G Digi-Reel 396,693 1
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    MBRS140T3G Cut Tape 396,693 1
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    MBRS140T3G Reel 396,635 2,500
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    MBRS140T3G Ammo Pack 5
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    MBRS140T3G Reel 20,000
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    Mouser Electronics MBRS140T3G 51,029
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    Verical MBRS140T3G 50,000 2,500
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    Newark MBRS140T3G Cut Tape 141,540 5
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    MBRS140T3G Reel 20,000 2,500
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    TME MBRS140T3G 6,244 1
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    Chip 1 Exchange MBRS140T3G 26,022
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    EBV Elektronik MBRS140T3G 72,500 10 Weeks 2,500
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    Master Electronics MBRS140T3G 50,000
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    New Advantage Corporation MBRS140T3G 1,620,000 1
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    Win Source Electronics MBRS140T3G 119,000
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    onsemi MBRS140T3

    DIODE SCHOTTKY 40V 1A SMB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRS140T3 Reel 2,500
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    Bristol Electronics MBRS140T3 19,626
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    MBRS140T3 5,850
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    MBRS140T3 1,440 7
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    Quest Components MBRS140T3 4,680
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    MBRS140T3 1,835
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    Win Source Electronics MBRS140T3 120,000
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    onsemi MBRS140T3H

    DIODE SCHOTTKY 40V 1A SMB
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    onsemi MBRS140T3G.

    Schottky Rectifier, 1A, 40V, 403A; Repetitive Peak Reverse Voltage:40V; Average Forward Current:1A; Diode Configuration:Single; Diode Case Style:Do-214Aa (Smb); No. Of Pins:2Pins; Forward Voltage Max:600Mv; Forward Surge Current:40A Rohs Compliant: Yes |Onsemi MBRS140T3G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRS140T3G. Reel 2,500
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    onsemi MBRS140T3G (ALTERNATE: 5452074)

    Diode, Schottky Barrier, Vr 40V, If 1A, Pkg SMB, Vf 0.6V, Tj +125degc, Cs 40A, Ir 10mA | ON Semiconductor MBRS140T3G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS MBRS140T3G (ALTERNATE: 5452074) Bulk 336 128 Weeks 1
    • 1 $0.424
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    Find more MBRS140T3 price and stock on Findchips.com

    MBRS140T3 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRS140T3 Motorola Surface Mount Schottky Power Rectifier Original PDF
    MBRS140T3 On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRS140T3 Microsemi Schottky Rectifier Scan PDF
    MBRS140T3 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Schottky Rectifier, 40V, 1A, Pkg Style SMB Scan PDF
    MBRS140T3/D On Semiconductor 1.0 AMPERE 40 VOLTS Original PDF
    MBRS140T3/D On Semiconductor 1.0 AMPERE 40 VOLTS Original PDF
    MBRS140T3-D On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRS140T3G On Semiconductor 1A 40V Schottky Rectifier Original PDF

    MBRS140T3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    403A-03

    Abstract: CASE 403A B140 MBRS140T3
    Text: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		PDF MBRS140T3/D MBRS140T3 403A-03 CASE 403A B140 MBRS140T3

    marking b14 diode

    Abstract: diode b14 b14 diode surface mount b14 smb diode diode schottky B14 marking code B14 diode MARKING CODE B14 marking B14
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS140T3 marking b14 diode diode b14 b14 diode surface mount b14 smb diode diode schottky B14 marking code B14 diode MARKING CODE B14 marking B14

    B14 diode on semiconductor

    Abstract: marking b14 on semiconductor B14 MARKING marking b14 diode marking code B14 marking code onsemi Diode B14 MBRS140T3 B14 marking code b14 diode surface mount b14 smb diode
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS140T3 r14525 MBRS140T3/D B14 diode on semiconductor marking b14 on semiconductor B14 MARKING marking b14 diode marking code B14 marking code onsemi Diode B14 MBRS140T3 B14 marking code b14 diode surface mount b14 smb diode

    DIODE MOTOROLA B14

    Abstract: 403A-03 schottky DIODE MOTOROLA B14 motorola diode marking B14 MBRS140T3
    Text: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		PDF MBRS140T3/D MBRS140T3 DIODE MOTOROLA B14 403A-03 schottky DIODE MOTOROLA B14 motorola diode marking B14 MBRS140T3

    marking B14 diode

    Abstract: b14 smb diode
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS140T3 r14525 MBRS140T3/D marking B14 diode b14 smb diode

    MBRS340T3G

    Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
    Text: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG


    Original     		PDF MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRS340T3G MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc

    mbrs140t3g

    Abstract: SBRS8140T3 b14 smb diode
    Text: MBRS140T3G, SBRS8140T3G Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3G, SBRS8140T3G MBRS140T3/D mbrs140t3g SBRS8140T3 b14 smb diode

    schottky DIODE MOTOROLA B14

    Abstract: Diode Motorola B14 b14 smb diode MBRS140T3
    Text: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		PDF MBRS140T3/D MBRS140T3 schottky DIODE MOTOROLA B14 Diode Motorola B14 b14 smb diode MBRS140T3

    Untitled

    Abstract: No abstract text available
    Text: MBRS140T3G, SBRS8140T3G Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3G, SBRS8140T3G MBRS140T3/D

    EasyPIC v7 Schematic

    Abstract: easypic diode T35 -4-D6 resistor 4k7 diode t25 4 e8 dp 104c RA6 TRANSISTOR smd transistor rc3 smd transistor rc7
    Text: BUILT - IN COMPONENT PACKAGE OVERVIEW SYMBOL SYMBOL SYMBOL SYMBOL SYMBOL SYMBOL 1:1 1:1 1:1 1:1 1:1 1:1 SIDE VIEW TOP VIEW SIDE VIEW RESISTOR 1K 1/8W SYMBOL 1:1 MBRS140T3 SIDE VIEW SIDE VIEW RESISTOR 1/2W 1:1 1:1 1:1 1:1 SIDE VIEW INSIDE VIEW TOP VIEW PUSH BUTTON


    Original     		PDF MBRS140T3 AP34063 1121AG MC34063A B8742601 FT232RL 220uH 220uF/35V 220pF EasyPIC v7 Schematic easypic diode T35 -4-D6 resistor 4k7 diode t25 4 e8 dp 104c RA6 TRANSISTOR smd transistor rc3 smd transistor rc7

    MBRS140T3G

    Abstract: SBRS8140T3G B14A schottky diode SMB marking code 120 b14 smb diode smb marking code B14
    Text: MBRS140T3G, SBRS8140T3G Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3G, SBRS8140T3G MBRS140T3/D MBRS140T3G SBRS8140T3G B14A schottky diode SMB marking code 120 b14 smb diode smb marking code B14

    MBRS140T3G

    Abstract: onsemi SMB Schottky diode B14 b14 smb diode MBRS140T3
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3 MBRS140T3/D MBRS140T3G onsemi SMB Schottky diode B14 b14 smb diode MBRS140T3

    b14 smb diode

    Abstract: diode b14 MBRS140T3G marking B14 diode b14 diode surface mount AS 031 B14g smb marking code B14 5M MARKING CODE SCHOTTKY DIODE MBRS140T3
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3 b14 smb diode diode b14 MBRS140T3G marking B14 diode b14 diode surface mount AS 031 B14g smb marking code B14 5M MARKING CODE SCHOTTKY DIODE MBRS140T3

    pK1 TRANSISTOR

    Abstract: diode T35 -4-D6
    Text: BUILT - IN COMPONENT PACKAGE OVERVIEW SYMBOL SYMBOL 1:1 1:1 SIDE VIEW TOP VIEW SIDE VIEW SYMBOL SYMBOL 1:1 1:1 RESISTOR 1/8W CAPACITOR SYMBOL 1:1 MBRS140T3 SIDE VIEW TOP VIEW 1:1 TOP VIEW SIDE VIEW SYMBOL SYMBOL SYMBOL 1:1 1:1 1:1 1:1 SIDE VIEW TOP VIEW SIDE VIEW


    Original     		PDF MBRS140T3 220uH 220uF/35V/LESR 220pF MC34063A 1N4007 1N4007 pK1 TRANSISTOR diode T35 -4-D6

    marking b14 diode

    Abstract: diode b14 marking code B14 diode MARKING CODE B14 b14 smb diode b14 diode surface mount
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS140T3 marking b14 diode diode b14 marking code B14 diode MARKING CODE B14 b14 smb diode b14 diode surface mount

    Untitled

    Abstract: No abstract text available
    Text: MBRS140T3G, SBRS8140T3G Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3G, SBRS8140T3G MBRS140T3/D

    MBRS140T3G

    Abstract: B14g b14 smb diode MBRS140T3 CASE 403A B14 diode on semiconductor
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3 MBRS140T3/D MBRS140T3G B14g b14 smb diode MBRS140T3 CASE 403A B14 diode on semiconductor

    ACT14

    Abstract: 2.5mm power jack U27A bc62 MBRS140T3 MC34063AD XTAL 4MHz 78L12 MC33269ADJ 74ACT14
    Text: 1 2 3 4 5 6 7 8 VCC3 VCC VCC POWER-ON RESET U27A 1 RESET D2 OPTIONAL MBRS140T3 2 R49 100K OUT EN PORESET- 2 74ACT14 Modification 1 3 EXTCLK GND 1 A U29 4 R97 VCC R118 10K TC5 10uF JP5 A EXTAL 4MHz OPTIONAL X5 32.768KHz OPTION C57 10pF R108 XTAL 200K C58 10pF


    Original     		PDF MBRS140T3 74ACT14 768KHz MC33269ADJ 170uH MC34063AD TPS2211 ACT14 2.5mm power jack U27A bc62 MBRS140T3 MC34063AD XTAL 4MHz 78L12 MC33269ADJ 74ACT14

    DIODE MARKING EJL

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with


    OCR Scan     		PDF MBRS140T3/D DIODE MARKING EJL

    schottky DIODE MOTOROLA B14

    Abstract: b14 smb diode motorola diode marking B14 BRS140T3
    Text: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier M BRS140T3 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with


    OCR Scan     		PDF MBRS140T3/D S140T3 03A-03 schottky DIODE MOTOROLA B14 b14 smb diode motorola diode marking B14 BRS140T3

    403A-03

    Abstract: MBRS130LT3 MBRS1100T3
    Text: SMB Devices Maximum die size 64 mil x 64 mil CASE 403A-03 Rectifiers — Schottky Device MBRS130LT3 MBRS140T3 MBRS1100T3 V rrm Volts k> Amps •fsm Amps Vf @25°C Volts lR @ 25°C mA 30 40 100 1 1 1 40 40 40 0.395 0.600 0.750 1.000 1.000 0.500 V rrm Volts


    OCR Scan     		PDF 03A-03 MBRS130LT3 MBRS140T3 MBRS1100T3 MURS120T3 MURS160T3 403A-03 MBRS1100T3

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS140T3 Surface Mount Schottky Power Rectifier Motorola Preferred Device . . . em ploying the Schottky Barrier principle in a large area m etal-to-silicon power diode. State-of-the-art geom etry features epitaxial construction with oxide passivation and metal


    OCR Scan     		PDF MBRS140T3

    MBRS120T3

    Abstract: MBRS14ot3 5817SMJ 5818SMJ 5819SMJ MBRS130T3 MBRS130TR MBRS140T3 SK12 SK13
    Text: 1 Amp Schottky Rectifiers 5817SMJ - 5819SMJ CATHODE BAND Dim. Inches Minimum A B C D E F G H J l-B -l Microsemi Catalog Number 5817SMJ SK12 MBRS120T3 SK13 MBRS130T3 MBRS130TR SK14 MBRS140T3 5818SMJ 5819SMJ -.035 .065 .205 .160 .130 .116 .089 .008 .020


    OCR Scan     		PDF 5817SMJ MBRS120T3 5818SMJ MBRS130T3 MBRS130TR 5819SMJ MBRS140T3 Characte200 5819SM MBRS120T3 MBRS14ot3 MBRS130T3 MBRS130TR MBRS140T3 SK12 SK13