MC 752 K Search Results

C 32725

Abstract: k type thermocouple sensor 10000 transducer for thermocouple of type k to volt Thermocouple Type j IEC 584-1 0800C 0-1000C J type thermocouple 0-400c mcr-te-jk-u-e
Contextual Info: Configurable Temperature Measuring Transducers for Thermocouple Type J,K MCR-TE-JK-. • Temperature range can be set using DIP switches • ZERO/SPAN adjustment • Open circuit detection • Available with electrically isolated input U, I POWER 1. Description

Contextual Info: DASH NO. M CODE GSD MADE FROM R E V IS IO N S ISSUE cn CHANGES ER 3 3 2 1 5 WJU 0 7 / 2 3 / 9 1 hO I ro 1 .5 5 REF. .6 9 0 . REF. I CO .6 3 HEX. REF. .81 REF. NOTES" 1. FOR USE WITH BELDEN 9 2 5 9 & 9 2 6 6 CABLE. 2 . FOR CABLING INSTRUCTIONS SEE C P -4 6 5 .

powercube

Abstract: Powercube dc dc converter
Contextual Info: ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1019, West W arw ick, Rl 02893 Power Module Sockets • Tel. 4 01 -82 3 -5 2 00 • FAX 401-823-8723 □ Power Module Sockets c \ <D D> 3 % % / f I Sockets For: Contact: Gold over Nickel or Tin-Lead over Nickel

2N3713

Abstract: 2SC 9012 2N3714 2n3716 9012 transistor 2N371S k130k1
Contextual Info: TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS • 150 W at 25°C Case Temperature • 10 A Rated Collector Current • Min f hfe of 30 kHz <* Z2 2 * § m • Min f T of 4 MHz

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

PH300F

Abstract: powercube PH150F Powercube dc dc converter NFC20-24S12 computer products
Contextual Info: ADVANCED INTERCONNECTIONS. SocketPac 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850 / 401-823-5200 Fax 401-823-8723 Email advlntcorp@aol.com - Internet http://www.advintcorp.com SocketPac SoeM Pac Features: Sockets For: • Peel-A-Way delivery system.

WR30

Abstract: astec ps PH50 PH150F Ericsson artesyn Powercube dc dc converter PKA20 PH75F 280
Contextual Info: SocketPac 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 • Email info@advintcorp.com • Internet http://www.advintcorp.com SocketPac® Features: Sockets For: • Peel-A-Way® delivery system.

104 k 100

Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous

ESM thyristor

Abstract: thyristor disc Vrrm 20000 MDF656 esm 2000 thyristor disc Vrrm 2000 mu 86 452 thyristor sgs Thomson Thyristor DFB51 DF 652
Contextual Info: / = 7 SCS-THOMSON Ä 7# GENERAL PURPOSE & INDUSTRIAL RülDg|S@II!JCT8@liîOÔËS HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779 b CB-479 CB-450 FAST RECOVERY RECTIFIER DIODES Type V RRM Tj max V <°C) (A) SV 11. F (R) SV 15. F (R) 800— 2000

Contextual Info: /T 7 *J M S G S -T H O M S O N , [ M D M ilL K g W R Ü D Ê T S 7 5 1 4 PROGRAMMABLE V.23 MODEM WITH DTMF • PROGRAMMABLE MODES: - Modem 75bps transmit, 1200bps receive - Modem 1200bps transmit, 75bps receive - DTMF dialing - Call status tone detection

1XFH32N50

Abstract: 1XFH 30n5
Contextual Info: H VDSS HiPerFET Power MOSFETs 500 V 500 V IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family D DS on 0.16 Q 0.15 Q ^D25 30 A 32 A t. < 250 ns Preliminary data Symbol Maxi mum Rati ngs Test Conditions V DSS T = 25°C to 150°C

15N100

Abstract: IXFH15N100 IXFH14N100 IXFT14N100
Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 RDS on IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings

IXFM42N20

Abstract: IXFM50N20 IXFT58N20 50N20 transistor ixfh application note TO-204 footprint ixfh 26 n 49 42N20 58N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions

Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions

80n06

Contextual Info: IXFH 80N06 IXFT 80N06 HiPerFETTM Power MOSFETs VDSS ID25 = 60 V = 80 A = 6.5 mW RDS on trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IDM

Contextual Info: HiPerFETTM Power MOSFETs Q Class IXFH 12N90Q IXFT 12N90Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt VDSS ID25 RDS on = 900 V = 12 A = 0.9 W trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

50n20

Abstract: IXFM50N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions

80N10

Abstract: 80N10Q
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

40N30Q

Abstract: IXYS 40N30Q
Contextual Info: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs IXFH 75N10Q IXFT 75N10Q VDSS ID25 = 100 V = 75 A = 20 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings VDSS

80N085

Abstract: IXFH80N085 80N08
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N085 IXFT 80N085 VDSS = 85 V = 80 A ID25 RDS on = 9 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Powercube dc dc converter

Abstract: TYPE302 astec ps AM80
Contextual Info: ADVANCED Dual In-line Adapters INTERCONNECTIONS. 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850 / 4 0 1 -8 2 3 -5 2 0 0 -Fax 401-823-8723 Email advintcorp@ aol.com • Internet http://www.advintcorp.com Dual In-line Adapters / Discrete Component Carriers

7B30A60B

Abstract: diode pk 752 inverter 3phase 220 volt pms Bridge Rectifier
Contextual Info: MOTOROLA Order this document by MHPM7B30A80B/D SEMICONDUCTOR TECHNICAL DATA M HPM 7B30A60B Hybrid Power Module Meters!« Praftmd Devtee Integrated Power Stage for 3.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake translstor/dlode In a single convenient package. The output