MC74HC1G Search Results

Motorola MC74HC

Abstract: MARKING P5F BU 110 MC74HC1G00 mc74hc
Contextual Info: i MOTOROLA SEM ICONDUCTO R TECHNICAL DATA Order this document by MC74HC1 GOO/D Product Preview 2-Input NAND Gate The MC74HC1G00 is a high speed C M O S 2-inputNAND gate fabricated with silicon gate C M O S technology. It achieves highspeed operation similar to equivalent LSTTL while maintaining C M O S low

Contextual Info: MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to

diode marking tl

Abstract: 28 sc MC74HC1G00
Contextual Info: MC74HC1G00 Single 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

MC74HC1G00

Abstract: A114 A115 C101 JESD22
Contextual Info: MC74HC1G00 Single 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

74HC1G14

Abstract: MC74HC1G14 T1 SOT23 A115 JESD22 MC74HC A114
Contextual Info: MC74HC1G14 Single Inverter with Schmitt−Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt−Trigger input fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

marking P5t

Abstract: a69 sot P5T marking MC74HC1G14
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Order this document by MC74HC1G14/D Product Preview MC74HC1G14 Inverter with Setimiit-Trigger Input The MC74HC1G14 is a high speed C M O S inverter with Schmitt-Trigger input fabricated with silicon gate C M O S technology. It

diode SM 88A

Abstract: marking cd sot-353
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA ^ Order this document by MC74HC1G04/D Product Preview MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology, tt achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.

marking h5d

Contextual Info: MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to

Contextual Info: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output

MC74HC1G00

Abstract: MC74HC motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MC74HC1G00/D Product Preview MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M C74HC1G08/D Product Preview M C74HC1G08 2 -In p u t AND G ate The MC74HC1G08 is a high speed CMOS 2 -in p u t AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M C74HC1G02/D Product Preview M C74HC1G 02 2 -In p u t NOR G ate The MC74HC1G02 is a high speed CMOS 2 -in p u t NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low

MC74HC1G14

Contextual Info: MC74HC1G14 Single Inverter with Schmitt−Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt−Trigger input fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

diode Marking code v3

Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Contextual Info: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.

Contextual Info: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high–speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high–speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of multiple stages, including a

U04 marking U04

Contextual Info: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

Contextual Info: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of multiple stages, including a

Contextual Info: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

Contextual Info: MC74HC1G02 Single 2-Input NOR Gate The MC74HC1G02 is a high–speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

MC74HC

Abstract: MC74HC1G08 MC74HC1G08DFT2 MC74HC1G08DFT4 MC74HC1G08DTT1 MC74HC1G08DTT3 SC88A
Contextual Info: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer

NLVHC1G14DFT1G

Abstract: MC74HC1G14
Contextual Info: MC74HC1G14 Single Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt−Trigger input fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.

Motorola MC74HC

Abstract: MC74HC1G32D
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Order this document by MC74HC1G32/D Product Preview 2-Input OR Gate The MC74HC1G32 is a high speed C M O S 2-input O R gate fabricated with silicon gate C M O S technology. It achieves high speed operation similar to equivalent LSTTL while maintaining C M O S low

Contextual Info: MC74HC1GU04 Single Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. The MC74HC1GU04 output drive current is 1/2 compared to MC74HC series. • • • • • • High Speed: tPD = 7 ns Typ at VCC = 5 V

431 SOT23-5

Abstract: marking code t2 sot23-5 vh marking sc70 2.gND 4.out sot23-5 MC74HC1G14
Contextual Info: MC74HC1G14 Single Inverter with Schmitt−Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt−Trigger input fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output.