MCE METELICS Search Results

relay srd

Contextual Info: MCE TECHNOLOGIES Products that make a world of difference MCE Technologies, Inc. is a world leader in the design, manufacture and marketing of microwave and RF devices, components and subsystems for wireless applications including cellular/ mobile GSM, WCDMA and CDMA2000 base stations, satellite, wireless

MGV-125-20

Abstract: MA46470 MCE Metelics MCE Metelics MGV-100-20 MGV-125-22 MGV125-22
Contextual Info: 975 Stewart Drive • Sunnyvale, CA 94085 • www.metelics.com PH 408.737.8181 • FX 408.733.7645 • sales@metelics.com Copyright 2002 MCE Metelics. All rights reserved. Specifications subject to change without notice. Revision date 1.24.05 aAs H GaAs Hyperabrupt Tuning Varactors

MMD820-C12

Abstract: MMD805 MMD-810 MCE Metelics MMD-820-C12 MMD835-C1 MMD-805-C12 MMD-840-C12 step recovery diodes comb generator
Contextual Info: C12 17 [.432] 13 [.330] Top contact is Anode except for MSS20,000 and MSS39,000 series diodes > 2 [0.051] 17 [.432] 13 [.330] Top Contact Dimensions in mils [mm] Back Contact MCE / Metelics Corporation, 975 Stewart Drive, Sunnyvale, California 94086, 408-737-8181, Fax: 408-733-7645

MPN7620-ET47

Abstract: mpn7620 MPN7 MPN-7630 cla4603-000 MCE Metelics
Contextual Info: sj Ul_ UC, MPV-22-2003 UU tJLJ • 14:03 I I\ 1l—'w 14087337645 MCE METEL ICS P.02 MPN7600 Series Limiter Diodes Mesa Construction Mete Iics Corporation Applications: Limiters Maximum Ratings Storage Temperature Operating Temperature Replaces cC/W Chip Size

MGM-801

Abstract: MCE Metelics
Contextual Info: MGM-801 GAIN MODULE FEATURES • • • • Full 2–4 GHz Frequency Range 10.5 dB Gain Surface Mount Package: 0.500" x 0.330" x 0.085" Single Bias Supply Voltage APPLICATIONS DC • Lo Buffer/Distribution amplifier • Broadband, wide dynamic range IF amplifier

MGV-100-20

Abstract: MGV-125-20 MGV-125-22 MGV-125-25 MGV-100-21 MGV-075-10 MCE Metelics MGV-100-20 MGV-100-23 MA46471 MA46472
Contextual Info: GaAs Hyperabrupt Tuning Varactors FEATURES PACKAGE STYLES • Constant Gamma 0.75, 1.00, or 1.25 over a wide tuning ratio • High Q • Linear Frequency Tuning • Stable performance in High Reliability environment • Available in Packaged and Chip Form

77505

Abstract: 2310 fx MMA710-SOT89TR 75558 TRANSISTOR 6822 MMA710-SOT89 2944 3443 SOT-89 1000DB MMA710
Contextual Info: MMA710-SOT89 Darlington HBT Amplifier FEATURES G • 100 KHz to 4 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept MMA 710 The MMA710 is a packaged InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier in a low cost SOT-89 surface mount

MMA701-SOT89

Abstract: MCE Metelics
Contextual Info: MMA701-SOT89 Load Pull Frequency in MHz Vce=5.00V Freq. Mag Angle 824 837 849 869 881 894 910 930 960 1710 1740 1770 1790 1820 1850 1910 1930 1960 1990 2110 2140 2170 2400 2450 2500 2600 2700 0.199 0.192 0.191 0.221 0.201 0.177 0.211 0.223 0.231 0.171 0.211

MMA60

Abstract: 8 mu 0833 MCE Metelics
Contextual Info: MMA601 High Linearity HBT Die FEATURES • • • • + 44 dBm IP3 at 2.1 GHz + 26 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 5000 MHz Operation The MMA601 is an InGaP Heterojunction Bipolar Transistor (HBT) provided

330105

Abstract: 143-754 metelics 2598 85890 121-270 544 mmic MMA602 462501 97346 550538
Contextual Info: MMA602 Darlington HBT Die FEATURES • 100 KHz to 5 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept The MMA602 is a MMIC InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier provided in die form. The amplifier

PH 0852

Abstract: 40530 transistor
Contextual Info: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)

amplifier diagram

Contextual Info: MMA612 DC to 12 GHz Amplifier FEATURES: • DC - 12 GHz Broadband Gain Block. • Flat gain over bandwidth +/- 1 dB. • 50 Ohm match Input/Output DESCRIPTION: The MMA612 is a fully matched Darlington Amplifier Die, constructed with reliable InGaP-GaAs HBT technology.

40530 transistor

Abstract: MMA701-SOT89TR 7905 sot89 MMA 7815 MMA701 MMA701-SOT89 AN 7591 POWER AMPLIFIER PH 0852 7814 transistor AN 7591
Contextual Info: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)

Contextual Info: MMA612 DC to 12 GHz Amplifier FEATURES: • DC - 12 GHz Broadband Gain Block. • Flat gain over bandwidth +/- 1 dB. • 50 Ohm match Input/Output DESCRIPTION: The MMA612 is a fully matched Darlington Amplifier Die, constructed with reliable InGaP-GaAs HBT technology.

MPND-4005

Abstract: MPND4005 MCE Metelics MBP-1030 metelics anti-parallel
Contextual Info: MTLXS00066 metelics SCHOTTKY FOR MIXER, DOUBLER OR BIASED DETECTOR • ojsmoi4i ' ojeioooq PART NUMBER MSS-30, MSS-40, MSS-50, MSS-60, 142 141 146 144 TYPE VF @ 1 mA mV MAX. RD @ 5 mA SINGLE SINGLE SINGLE SINGLE 230 TO 350 335 TO 505 415 TO 625 580 TO 675

MGS801

Abstract: MGS803 MGS802 MCE Metelics
Contextual Info: SURFACE MOUNT GaAs SCHOTTKY FOR MIXERS AND DOUBLERS FEATURES 670-700 u 26.4-27.6 mils • Surface mount Package in a Chip 330-350 u (13-13.8 mils) • Low Capacitance 0.07/0.04 pF typical Anti-parallel/single • Low Rs 4 ohms typical 190-210 u (7.5-8.3 mils)