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2U 73 diode

Abstract: CXK79M18C165GB CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36

Contextual Info: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36

Contextual Info: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36

CXK79M18C164GB

Abstract: CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36

CXK79M72C165GB-4

Abstract: CXK79M36C165GB CXK79M36C165GB-3 CXK79M36C165GB-33 CXK79M72C165GB CXK79M72C165GB-3 CXK79M72C165GB-33
Contextual Info: SONY ΣRAM CXK79M72C165GB / CXK79M36C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 3/33/4 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits) and the CXK79M36C165GB (organized as 524,288 words

CXK79M36C165GB

Abstract: CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M36C165GB-5 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB / CXK79M36C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits) and the CXK79M36C165GB (organized as 524,288 words

CXK79M36C160GB

Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
Contextual Info: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words

CXK79M36C164GB

Abstract: CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M36C164GB-5 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB / CXK79M36C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words

CXK79M36C161GB

Abstract: CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M36C161GB-5 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 diode 2U 6A
Contextual Info: SONY ΣRAM CXK79M72C161GB / CXK79M36C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits) and the CXK79M36C161GB (organized as 524,288 words

A7W17

Abstract: CXK79M18C161GB CXK79M36C161GB CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 1K x 8 static ram IDD24
Contextual Info: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36

CXK79M72C164GB-33

Abstract: CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5
Contextual Info: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36

CXK79M18C165GB

Abstract: CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Contextual Info: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36

A7W17

Abstract: CXK79M18C160GB CXK79M36C160GB CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5 2a 105
Contextual Info: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36

CXK79M72C164GB-28

Abstract: CXK79M72C164GB-33 CXK79M36C164GB CXK79M72C164GB CXK79M72C164GB-3 BGA209
Contextual Info: SONY ΣRAM CXK79M72C164GB / CXK79M36C164GB 28/3/33/4 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words

H40P

Abstract: NN12 P35-5136-000-200 MARCONI power
Contextual Info: P35-5136-000-200 HEMT MMIC POWER AMPLIFIER, 28GHz Features • • • Gain; 15dB typical @ 28GHz P-1dB; 29dBm typical @ 28GHz 0.20 µm pHEMT technology Description The P35-5136-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers

02580

Abstract: H40P NN12 P35-5126-000-200 Sharp amplifier SM 207
Contextual Info: P35-5126-000-200 HEMT MMIC DRIVER AMPLIFIER, 25-30GHz Features • • • Over 22dBm Output Power @ 28GHz 10dB Gain from 25 to 30GHz Small 2 x 1mm Die Size Description The P35-5126-000-200 is a high performance 25-30GHz Gallium Arsenide driver amplifier. This product is

H40P

Abstract: NN12 P35-5127-000-200 MARCONI power
Contextual Info: P35-5127-000-200 HEMT MMIC DRIVER AMPLIFIER, 22-34GHz Features • • 20dBm Output Power 18dB Gain Description The P35-5127-000-200 is a high performance 22-34GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and point to point microwave systems . The second and third

H40P

Abstract: MARCONI power NN12 P35-5134-000-200
Contextual Info: P35-5134-000-200 HEMT MMIC 1W POWER AMPLIFIER, 24GHz Features • • • Gain; 16dB typical @ 24GHz P-1dB; 30.5dBm typical @ 24GHz 0.20 ? m pHEMT technology Description The P35-5134-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers

Contextual Info: Frequency Synthesizer KSND-1099N-119+ 50Ω Dual Frequency 160.5MHz xed & 1073.8 to 1098.8MHz The Big Deal • Dual frequency • Low phase noise and spurious • Robust design and construction • Small size 0.800" x 0.584" x 0.154" CASE STYLE: DK1515

TB-595

Abstract: LMX2485 tb595
Contextual Info: Frequency Synthesizer KSND-1099N-119+ 50Ω Dual Frequency 160.5MHz fixed & 1073.8 to 1098.8MHz The Big Deal • Dual frequency • Low phase noise and spurious • Robust design and construction • Small size 0.800" x 0.584" x 0.154" CASE STYLE: DK1515

MARCONI power

Abstract: MARCONI amplifier
Contextual Info: P35-5115-000-200 HEMT MMIC LNA 17 - 24GHz Features • • Typical 2dB Noise Figure @ 24GHz Small 1.8 x 0.94mm Die Size Description The P35-5115-000-200 is a 17-24GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixed-point microwave systems and satellite communications.

Contextual Info: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

Contextual Info: Frequency Synthesizer 50Ω KSN-1100A-119+ 1095.4 to 1100.6 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-1100A-119+ is a Frequency Synthesizer, designed to operate from 1095.4 to

tm 1618

Abstract: ADF4106
Contextual Info: Frequency Synthesizer 50Ω KSN-1100A-119+ 1095.4 to 1100.6 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-1100A-119+ is a Frequency Synthesizer, designed to operate from 1095.4 to