MCR100-8 THYRISTOR Search Results

MCR100-8

Abstract: MCR100-7 Mcr100
Contextual Info: Thyristors Small Signal Diode DO-92 A B Features G E Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate

MCR100

Abstract: MCR100-6 MCR100-8 MCR100-6 circuit mcr-100 MCR100-7 MCR100-5 MCR100-4 MCR100-3
Contextual Info: Thyristors Small Signal Diode DO-92 A B Features G E Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate

MCR100-6

Abstract: MCR100-8 MCR100-8 thyristor MCR100 MCR100-6 circuit
Contextual Info: MOTOROLA Order this document by MCR100/D SEMICONDUCTOR TECHNICAL DATA MCR100-6 MCR100-8 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Motorola preferred devices PNPN devices designed for high volume, line-powered consumer applications such

MCR100-8

Abstract: MCR100-8 thyristor MCR100-6 100-6
Contextual Info: MOTOROLA Order this document by MCR100/D SEMICONDUCTOR TECHNICAL DATA MCR100-6 MCR100-8 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Motorola preferred devices PNPN devices designed for high volume, line-powered consumer applications such

MCR100-6

Abstract: MCR100-8 mcr100-6 p mcr100 MCR1006 "Silicon Controlled Rectifiers" MCR100-6 Datasheet transistor mcr100-6 MCR100 8 mcr-100
Contextual Info: MCR100-6/MCR100-8 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors P b Lead Pb -Free SCRs 0.8 A RMS 400/600 Voltage A 1.Cathode 2.Gate 3.Anode G C 1 2 3 TO-92 Maximum Ratings (TA=25°C unless otherwise noted) Symbol MCR100-6 MCR100-8

MCR100-6

Abstract: MCR100 MCR100-8 thyristor transistor mcr100-6 mcr 100 MCR1006 MCR-100 mcr100-8 mcr-100 6 mcr 100-8
Contextual Info: MCR100-6/100-8 MCR 100- 6, - 8 TO-92 Silicon Planar PNPN Thyristor 1. KATHODE FEATURES 2. GATE 3. ANODE Current-IGT: 200 µA ITRMS: 0.8 A VDRM: MCR100-6: 400 V MCR100-8: 600 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

MCR100-6

Abstract: MCR100 Triac MCR100-8 MCR100-8 MCR100-8 thyristor TO92 triac 0,8 a UA80 TO92 triac MCR1006
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MCR 100- 6,- 8 TO-92 Silicon Planar PNPN Thyristor MAIN FEATURES Symbol value unit IT RMS 0.8 A 2.GATE MCR100-6 400 MCR100-8 600 TJ Junction Temperature -40 to 125 ℃

MCR100-8

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Thyristors MCR 100- 6,- 8 TO-92 Silicon Planar PNPN Thyristor MAIN FEATURES Symbol value unit IT RMS 0.8 A MCR100-6 400 MCR100-8 600 Tj Junction Temperature -40 ~ 125 ℃ Tstg Storage Temperature

MCR100-6

Abstract: MCR100-8 mcr100 MCR100-8 thyristor transistor mcr100-8 MCR1006 a115 mcr 100
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MCR 100- 6, - 8 TO-92 Silicon Planar PNPN Thyristor 1. KATHODE FEATURES 2. GATE Current-IGT: 200 µA ITRMS: 0.8 A VDRM: 3. ANODE MCR100-6: 400 V MCR100-8: 600 V 1 2 3

MCR100-6

Abstract: MCR100-8 MCR100-4
Contextual Info: MCRlOO-4 MCR100-6 MCR100-8 CRO 0.8A SILICON CONTROLLED RECTIFIERS * Driven directly with IC and MOS device. TO-92 * Feature proprietary, void-free glass passiviated chips. * Available in voltage ratings from 100 to 600 volts VDRM and VRRM * Sensitive gate trigger current.

MCR100-6

Contextual Info: TO-92 Plastic-Encapsulate Transistors MCR 100- 6, - 8 TO-92 Silicon Planar PNPN Thyristor 1. KATHODE FEATURES 2. GATE Current-IGT: 200 µA ITRMS: 0.8 A VDRM: 3. ANODE MCR100-6: 400 V MCR100-8: 600 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

mcr 100

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 TO-92 Silicon Planar PNPN Thyristor 1. KATHODE FEATURES 2. GATE Current-IGT: 200 µA ITRMS: 0.8 A VDRM: 3. ANODE MCR100-6: 400 V MCR100-8: 600 V 1 2 3 Operating and storage junction temperature range

Contextual Info: MCRlOO-4 MCR100-6 MCR100-8 CRO 0.8A SILICON CONTROLLED RECTIFIERS * Driven directly with IC and MOS device. * Feature proprietary, void-free glass passiviated chips. * Available in voltage ratings from 100 to 600 volts TO-92 VDRM and VRRM * Sensitive gate trigger current.

Contextual Info: SEMICONDUCTOR MCR100-6/8 FORWARD INTERNATIONAL ELECTRONICS LTD. Thyristor TECHNICAL DATA AC POWER CONTROL APPLICATION Package: TO-92 *Repetitive Peak Off-state Voltage :V DRM=400V/600V *R.M.S On-state Current : I T RMS =0.8A ABSOLUTE MAXIMUM RATINGS at Tamb=250C

Contextual Info: LITE-ON SEMICONDUCTOR MCR100-8 SCRs 0.25 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SOT-23 FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other logic Circuits SOT-23 DIM. MIN. MAX. A 0.89

Contextual Info: , One. «_/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Thyristors MCR100-8 FEATURES • • • • • With TO-92 package Sensitive gate trigger current Low reverse and forward blocking current

MCR100-8

Abstract: POWER TRANSISTORS 600v VDRM600V VRRM600V
Contextual Info: INCHANGE Thyristors MCR100-8 ‹ FEATURES •With TO-92 package ·Sensitive gate trigger current ·Low reverse and forward blocking current ·Low holding current ‹ QUICK REFERENCE DATA SYMBOL MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak off-state voltage

MCR100-8

Abstract: MCR100-4 MCR100-6
Contextual Info: MCRlOO-4 MCRlOO-6 MCR100-8 0.8A SILICON CONTROLLED RECTIFIERS * Driven directly with IC and MOS device. * Feature proprietary, void-free glass passiviated chips. * Available in voltage ratings from 100 to 600 volts TO-92 VDRM and VRRM * Sensitive gate trigger current.

BT131 REPLACEMENT

Abstract: replacement S2025L 2N5754 replacement 2N3940 B149D mac210 2N4103 BTA16-600 X00602MA_1AA2 Z0110M
Contextual Info: Index and Cross Reference The following table represents a cross reference guide for all Thyristors that ON Semiconductor manufactures. Where ON Semiconductor part numbers are shown in bold the device is a form, fit, and function replacement for the industry part

MCR100

Contextual Info: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

MCR100-6 SCR 400 V 0,8 A

Abstract: MCR100 mcr100-6 p MCR100-6RLRM MCR100-6RLRAG
Contextual Info: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

MCR100-6 SCR 400 V 0,8 A

Abstract: MCR100-6G MCR100 mcr100-6 p SCR MCR100-8G 01397
Contextual Info: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

3rlg

Abstract: FAN motor MCR100-6 SCR 400 V 0,8 A MCR100-006
Contextual Info: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

MCR100

Contextual Info: MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.