MCT 575 Search Results

diode mur

Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Contextual Info: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.

MOS Controlled Thyristor

Abstract: MCT thyristor MCTV75P60E1 MA75P60E1
Contextual Info: April 1998 NS ESIG 2 D 00F NEW S E M I C O N D U C T O R OR 3D65P1 F D NDE MCT MME 100F2, O C RE 65P NOT MCT3A See MCTV75P60E1, MCTA75P60E1 75A, 600V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC

MCT thyristor

Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
Contextual Info: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC

Contextual Info: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C

MCT thyristor

Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
Contextual Info: Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor MCT CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC

MOS Controlled Thyristor

Abstract: MCTA75P60E1 MCTV75P60E1
Contextual Info: MCTV75P60E1, MCTA75P60E1 S E M I C O N D U C T O R 75A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability

MOS Controlled Thyristor

Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
Contextual Info: MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability

Contextual Info: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability

Contextual Info: MCTV35P60F1D CE M A R R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode M arch 1995 Package Features • 35A .-600V J E D E C S T Y L E T O -2 4 7 • VTM = -1 .35V (Max) at I = 35A and +150°C • 800A Surge Current Capability

MCT thyristor

Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
Contextual Info: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability

MOS Controlled Thyristor

Abstract: MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"
Contextual Info: MCTG35P60F1 S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability K • 800A/µs di/dt Capability

MOS Controlled Thyristor

Abstract: mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits
Contextual Info: MCTG35P60F1 S E M I C O N D U C T O R April 1998 NS DESIG W E N 2 R P100F ED FO MEND 2, MCT3D65 M O C E P-Type NOT R T3A65P100F C M e e S Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C

MCT thyristor

Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
Contextual Info: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC

cable

Abstract: shield cables
Contextual Info: CABLES - CAVI Index by short code | Indice per codice breve short code descriptive code data sheet short code descriptive code data sheet short code descriptive code data sheet short code descriptive code data sheet 104 107 108 111 112 124 125 134 136 137

TLP 817

Abstract: moc 641 CNY 817 TLP 621 TOSHIBA NEC ps2401 TLP766J MOTOROLA moc cny 57 moc 410 optokoppler
Contextual Info: Optokoppler Optocouplers Vergleichsliste Cross reference D iese Liste erhebt keinen A n sp ru ch auf V ollstän dig keit, im Einzelfall bitte die e n tsp re ch e n d e n D a te nb lätter ve rg le ich e n . (This list do es not cla im be in g com p le te , therefore,

SMD Resistors, Arrays and Networks

Abstract: STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd resistors, arrays and networks vishay vse-db0010-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

3G3DV

Contextual Info: OMRON 3G3DV Drive Series All the power you need, when and wherever you need it. » » Single drive solution that’s powerful, flexible and efficient » »S u i t a b l e fo r C a te g o r y 3 i n s t a l l a t i o n s » » o f fe rs yo u a w i d e ra n g e o f f u n c t i o n s f ro m P LC f u n c t i o n a l i ty

Contextual Info: Directional Couplers 50 & 75Q Surface MountJ 6 to 20 dB Coupling 5 MHz to 1200MHz JDC MHz COUPLING dB MAINLINE LOSS DtRECHVflY dB cm SCDC v $ m m LRDC CARD DATA POWER INPUT, W CASE STYLE l M U L M® U Nom . H o tn e ss Typ .M a x. Typ .M a x. Typ .M a x. Ty p . Mfn. Typ .M tn . Typ .M in.

e/15-16M

Contextual Info: Preliminary Information AMDÌ1 A M D - 751" System Controller Data Sheet Publication #21910 Rev:D Issue Date: August 1999 H D25 752 5 OObaOBt. b l S 1999 Advanced Micro Devices, Inc. A ll rights reserved. T he c o n te n ts of th is d o cu m en t a re p ro v id ed in co n n ectio n w ith A d v an ced

ABB inverter motor fault code

Abstract: 3 phase squirrel cage ABB motor star delta vlt 2900 FC102 abb variable frequency drive wiring diagram PT100 temperature sensor ABB motor ABB inverter motor fault MG16C102 DANFOSS ps 9 b DANFOSS ps 4 b
Contextual Info: MAKING MODERN LIVING POSSIBLE Design Guide VLT HVAC Drive FC 102 110-1400 kW www.danfoss.com/drives Contents VLT® HVAC Drive FC 102 Design Guide Contents 1 How to Read this Design Guide 2 Introduction 8 14 2.1 Safety 14 2.2 CE Labelling 15 2.2.1 CE Conformity and Labelling

MQ3 circuit diagram

Abstract: MCM67Q709A MCM67Q909 MCM69C232 MCM69C432 MCM69D536 MCM69D618 tms 980 5081b
Contextual Info: MOTOROLA Order this document by MCM69C232/D SEMICONDUCTOR TECHNICAL DATA MCM69C232 Advance Information 4K x 64 CAM The MCM69C232 is a flexible content–addressable memory CAM that can contain 4096 entries of 64 bits each. The widths of the match field and the output

Difference between LS, HC, HCT devices

Abstract: ACTQ244 AC240 ACT240 ACT244 F100324 F100325 MS010160 FACT
Contextual Info: Revised November 1999 Design Considerations Today’s system designer is faced with the problem of keeping ahead when addressing system performance and reliability. Fairchild Semiconductor’s advanced CMOS helps designers achieve these goals. FACT Fairchild Advanced CMOS Technology logic was