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    MCT THYRISTOR Search Results

    MCT THYRISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CR8PM-12B-A8#B00 Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    CR3PM-12G-C#B00 Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    5P4J-Z-AZ Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    CR3PM-12G-AT#B00 Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation
    5P4J-ZK-E2-AZ Renesas Electronics Corporation Thyristors Visit Renesas Electronics Corporation

    MCT THYRISTOR Datasheets Context Search

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    MCT thyristor

    Abstract: MOS-Controlled Thyristor mct thyristor datasheet MOS-Controlled Thyristor N-type SMCT2TA32N14A10 half hour delay circuit MOS Controlled Thyristor silicon controlled rectified 100C
    Text: 3 Northway Lane North Latham, New York 12110 – 2204 SMCT2TA32N14A10 SIZE 4 MCT SEMICONDUCTOR DISCHARGE SWITCH DESCRIPTION: This semiconductor discharge switch utilizes an n-type MOS-controlled thyristor, designed for the control of high power circuits with very small amounts of input energy. The MCT features high peak current capability


    Original     		PDF SMCT2TA32N14A10 150Deg MCT thyristor MOS-Controlled Thyristor mct thyristor datasheet MOS-Controlled Thyristor N-type SMCT2TA32N14A10 half hour delay circuit MOS Controlled Thyristor silicon controlled rectified 100C

    MCT thyristor

    Abstract: MOS-Controlled Thyristor half hour delay circuit 1400V MCT MOS-Controlled Thyristor N-type uf25c SMCT2TA65N14A10 100C 5A 200V SCR die s6 65a
    Text: 3 Northway Lane North SMCT2TA65N14A10 Latham, New York 12110 – 2204 SIZE 6 MCT SEMICONDUCTOR DISCHARGE SWITCH DESCRIPTION: This semiconductor discharge switch utilizes an n-type MOS-controlled thyristor, designed for the control of high power circuits with very small amounts of input energy. The MCT features high peak current capability


    Original     		PDF SMCT2TA65N14A10 15volts. MCT thyristor MOS-Controlled Thyristor half hour delay circuit 1400V MCT MOS-Controlled Thyristor N-type uf25c SMCT2TA65N14A10 100C 5A 200V SCR die s6 65a

    MCT harris

    Abstract: M65P100F2 TA49226 scr 2032 MCT3A65P100F2 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
    Text: MCT3A65P100F2 MCT3D65P100F2 S E M I C O N D U C T O R 65A, 1000V, P-Type MOS-Controlled Thyristor MCT January 1998 Features Description • 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    Original     		PDF MCT3A65P100F2 MCT3D65P100F2 150nts 1-800-4-HARRIS MCT harris M65P100F2 TA49226 scr 2032 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v

    MOS Controlled Thyristor

    Abstract: MCT thyristor MCTV75P60E1 MA75P60E1
    Text: April 1998 NS ESIG 2 D 00F NEW S E M I C O N D U C T O R OR 3D65P1 F D NDE MCT MME 100F2, O C RE 65P NOT MCT3A See MCTV75P60E1, MCTA75P60E1 75A, 600V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC


    Original     		PDF 3D65P1 100F2, MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MOS Controlled Thyristor MCT thyristor MCTV75P60E1 MA75P60E1

    MOS-Controlled Thyristor

    Abstract: MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MCT3D65P100F2 "MOS Controlled Thyristors" 100A gate turn-off
    Text: MCT3A65P100F2, MCT3D65P100F2 Semiconductor CE April 1999 [ /Title MCT3 A65P1 00F2, MCT3 D65P1 00F2 /Subject (65A, 1000V, PType MOSControlled Thyristor (MCT) ) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark IGNS WN DRA EW DES H T I TW ON PAR ETE - N


    Original     		PDF MCT3A65P100F2, MCT3D65P100F2 A65P1 D65P1 -1000V 150oC MO-093AA MOS-Controlled Thyristor MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MCT3D65P100F2 "MOS Controlled Thyristors" 100A gate turn-off

    MCT thyristor

    Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
    Text: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6

    MCT thyristor

    Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
    Text: Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor MCT CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC


    Original     		PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MCT thyristor MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6

    MOS Controlled Thyristor

    Abstract: MCTA75P60E1 MCTV75P60E1
    Text: MCTV75P60E1, MCTA75P60E1 S E M I C O N D U C T O R 75A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability


    Original     		PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MOS Controlled Thyristor MCTA75P60E1 MCTV75P60E1

    "mos controlled thyristor"

    Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
    Text: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE CATHODE GATE RETURN CATHODE (FLANGE) • 2000A Surge Current Capability


    Original     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "mos controlled thyristor" MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v

    isolated charge pump driver

    Abstract: No abstract text available
    Text: HIP2030EVAL S E M I C O N D U C T O R Isolated MCT/IGBT Gate Driver Evaluation Board August 1994 Features Description • 3000VDC Isolation The HIP2030 is a medium voltage integrated circuit MVIC capable of driving large capacitive loads at high voltage slew


    Original     		PDF HIP2030EVAL 3000VDC HIP2030 200ns. HIP2030 TLP2601 isolated charge pump driver

    igbt inverter welder schematic

    Abstract: inverter welder schematic diagram arc welder inverter full bridge arc welder inverter welder schematic arc welder circuit arc welder schematic MCT thyristor MOS-Controlled Thyristor inverter welder 4 schematic
    Text: HIP2030 S E M I C O N D U C T O R 30V MCT/IGBT Gate Driver March 1995 Features • • • • • • • • • • Description ± Polarity Gate Drive High Output Voltage Swing. . . . . . . . . . . . . . . . . . . . 30V Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . 6.0A


    Original     		PDF HIP2030 200ns 000pF 120kHz HIP2030 1-800-4-HARRIS igbt inverter welder schematic inverter welder schematic diagram arc welder inverter full bridge arc welder inverter welder schematic arc welder circuit arc welder schematic MCT thyristor MOS-Controlled Thyristor inverter welder 4 schematic

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
    Text: MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6

    "MOS Controlled Thyristors"

    Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1
    Text: Semiconductor S April 1999 CES PRO NS N RAW W DESIG D H T T WI O NE PAR ETE - N OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 • 65A, -1000V • VTM ≤ -1.4V at I = 65A and +150oC ANODE ANODE


    Original     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "MOS Controlled Thyristors" MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTA65P100F1 2000A MOS MCTV65P1

    mlt 22

    Abstract: MCT thyristor IGBT DRIVER SCHEMATIC chip MOS-Controlled Thyristor k 3918 k 3918 regulator HIP2030 IGBT DRIVER SCHEMATIC mct thyristor datasheet photo thyristor
    Text: Harris Semiconductor No. AN9408.2 Harris Intelligent Power November 1994 The HIP2030 MCT/IGBT Gate Driver Provides Isolated Control Signals To Switch Power Devices Author: J. K. Azotea Introduction The Harris Fiber-Optic Isolated Gate Driver HFOIGD is designed to operate reliably at high isolation voltages, dv/dt’s,


    Original     		PDF AN9408 HIP2030 HIP2030, HIP2030EVAL, DB307A. mlt 22 MCT thyristor IGBT DRIVER SCHEMATIC chip MOS-Controlled Thyristor k 3918 k 3918 regulator IGBT DRIVER SCHEMATIC mct thyristor datasheet photo thyristor

    MOS Controlled Thyristor

    Abstract: MCT thyristor MCT thyristor 1000v "mos controlled thyristor"
    Text: ~ MCT/IQBT/DI0DESI2 MOS CONTROLLED THYRISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF TA65P100F1 TA75P60E1 MOS Controlled Thyristor MCT thyristor MCT thyristor 1000v "mos controlled thyristor"

    MCT thyristor

    Abstract: MOS-Controlled Thyristor MOS Controlled Thyristor Silicones GE thyristor WL 002 A
    Text: S ILIC O N ^ POWGR , s u c t t a 32NUA10 Semiconductor Discharge Switch N-MOS controlled Thyristor MCT , ThinPak - (MCT) mountedonaThinPak®, ceramic“chip-scal^hybrid. rp— capability. Thissemi- 7 =„1,1


    OCR Scan     		PDF

    MCT thyristor

    Abstract: TA65N14A10 MOS Controlled Thyristor MOS-Controlled Thyristor SMCTTA65N14A10
    Text: SILICON^ ^POWGR SMCT TA65N14A10 Semiconductor Discharge Switch N-MOS Controlled Thyristor MCT , ThinPak


    OCR Scan     		PDF TA65N14A10 MCT thyristor MOS Controlled Thyristor MOS-Controlled Thyristor SMCTTA65N14A10

    MCT thyristor

    Abstract: TA32N14A10 MOS-Controlled Thyristor el 847 MOS Controlled Thyristor
    Text: SILICON^ ^POW GR Application Notes SMCT TA32N14A10 Semiconductor Discharge Switch N-MOS Controlled Thyristor MCT , ThinPak


    OCR Scan     		PDF TA32N14A10 MCT thyristor TA32N14A10 MOS-Controlled Thyristor el 847 MOS Controlled Thyristor

    MOS Controlled Thyristor

    Abstract: TA49226
    Text: HX A R R IS MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 lo<*6'N April 1999 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT p *0 Description Features 65A, -1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an


    OCR Scan     		PDF MCT3A65P100F2, MCT3D65P100F2 -1000V 000A/| MOS Controlled Thyristor TA49226

    Untitled

    Abstract: No abstract text available
    Text: MCTV65P100F1, MCTA65P100F1 H A R R IS X Semiconductor * # $ * » * * * * April 1999 65 A, 1000V P-Type MOS Controlled Thyristor MCT cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,-1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE)


    OCR Scan     		PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 000A/| MO-093AA O-218)

    Untitled

    Abstract: No abstract text available
    Text: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C


    OCR Scan     		PDF CTG35P60F1 -600V

    THYRISTOR 35A 300V

    Abstract: MCT thyristor 100v
    Text: &m MCTG35P60F1 a r ia s 35A, 600V P-Type MOS Controlled Thyristor MCT A p rii 1995 Package Features J E D E C S T Y LE TO -247 • 35A, -600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • BOOA Surge Current Capability • SOOA/jjs dl/dt Capability


    OCR Scan     		PDF MCTG35P60F1 -600V THYRISTOR 35A 300V MCT thyristor 100v

    Untitled

    Abstract: No abstract text available
    Text: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability


    OCR Scan     		PDF MCTV75P60E1, MCTA75P60E1 O-247 000A/| O-093AA O-218)

    Untitled

    Abstract: No abstract text available
    Text: MCTV35P60F1D CE M A R R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode M arch 1995 Package Features • 35A .-600V J E D E C S T Y L E T O -2 4 7 • VTM = -1 .35V (Max) at I = 35A and +150°C • 800A Surge Current Capability


    OCR Scan     		PDF MCTV35P60F1D -600V 800/Vns