MD SMD DIODE Search Results

Contextual Info: DF N 20 20 MD -6 PMPB200EN 100 V N-channel Trench MOSFET 30 May 2013 Objective data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N 20 20 MD -6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N 20 20 MD -6 PMPB11EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N 20 20 MD -6 PMPB20EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N 20 20 MD -6 PMPB95ENEA 80 V, single N-channel Trench MOSFET 17 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: DF N 20 20 MD -6 PMPB215ENEA 80 V, single N-channel Trench MOSFET 18 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Contextual Info: MD -6 PMPB11EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: MD -6 PMPB20EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

S1 DIODE

Abstract: cil smd G003 G008 QFN28 Hi-702 DISTANCE MEASUREMENT cih smd n type laser diode driver SMD DIODE 512
Contextual Info: iC-NZ Fail-Safe Laser Diode Driver 9090-02-046 Rev 1 18/02/2010 iC-NZ FAIL-SAFE LASER DIODE DRIVER FEATURES APPLICATIONS Peak value controlled three level laser switch for operation from CW up to 155 MHz Spike-free switching of laser currents of ca. 100 mA per

Contextual Info: Phase-leg Rectifier Diode VRSM V 1300 1700 VRRM V 1200 1600 TO-247 AD DSP 25 VRRM = 1200/1600 V IFRMS = 2 x 43 A IFAVM = 2 x 28 A TO-247 AD SMD TO-247 SMD TO-247 Type DSP 25-12A DSP 25-16A DSP 25-12AS DSP 25-16AS 1 2 3 1 1 2 Symbol Test Conditions I FRMS I FAVM

Contextual Info: SMD LED LTW-X45T-PH 1. Description The LTW LiteOn White LED is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting. It gives you total design freedom and

MD 202

Abstract: iC-WKL LDA DIODE IC-WK-SO8 WK2D WK4D CLASS II LASER CW Laser transistor SMD t01 power DIODE
Contextual Info: iC-WK, iC-WKL 2.4 V CW LASER DIODE DRIVER Rev D1, Page 1/8 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ CW operation up to 90 mA from 2.4 to 6 V supply voltage Rapid soft start after power-on typical within 70 µs Simple power adjustment via the external resistor

iC-WKL

Abstract: ICWKSO8 WKL2D G003 G008 MDA 300
Contextual Info: iC-WK, iC-WKL 2.4V CW LASER DIODE DRIVER Rev C2, Page 1/7 FEATURES APPLICATIONS ° ° ° ° ° ° ° ° ° ° ° ° ° CW operation up to 70mA from 2.4.6V supply voltage and up to 4A with an external power transistor Rapid soft start after power-on typical within 70µs

IXGH32N50BU1

Abstract: IXGH32N50BU1S
Contextual Info: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

IXGH22N50B

Abstract: IXGH22N50BU1 IXGH22N50BU1S smd diode 819 To-247 Jedec package outline
Contextual Info: Preliminary data TM HiP erF AST HiPerF erFAST with Diode IXGH22N50B U1 IXGH22N50BU1 IXGH22N50B U1S IXGH22N50BU1S IGBT Combi P ac k Pac ack VCES IC 25 VCE(sat)typ tfi(typ) = 500 V = 44 A = 2.1 V = 55 ns TO-247 SMD* Symbol Test Conditions Maximum Ratings VCES

iC-WKL

Abstract: WK4D
Contextual Info: iC-WK, iC-WKL Rev D1, Page 1/8 2.4 V CW LASER DIODE DRIVER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ CW operation up to 90 mA from 2.4 to 6 V supply voltage Rapid soft start after power-on typical within 70 µs Simple power adjustment via the external resistor

IXGH20N60BU1

Abstract: IXGH20N60BU1S HIPERFAST IGBT WITH DIODE IXGH20N60BU1 TO-247 IXYS DIODE SMD GEM TAA 521 D
Contextual Info: □ IXYS Preliminary data IXGH20N60BU1 IXGH20N60BU1S HiPerFAST IGBT with Diode V CES ^C 25 V CE(sat)typ Combi Pack *fi(typ) = 600 V = 40 A = 1.7 V = 100 ns TO-247 SMD* Symbol Test Conditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

TOYOTA

Abstract: NS953 radio ic Niigata Seimitsu toyota stereo ns953 ic data SMD FM IC FM varicap Niigata Seimitsu
Contextual Info: Varicap Diodes for FM Stereo Radio IC for NS953 by Niigata Seimitsu Co., Ltd. / Toyota Industries Corp. Feb 2006 Our HVC376B UFP and smaller package HVD376B (SFP) are especially suitable for FM stereo radio IC NS953 by NIIGATA SEIMITSU CO., LTD. / TOYOTA INDUSTRIES CORPORATION.

n60b

Abstract: n60bu 32N60A
Contextual Info: DIXYS HiPerFAST IGBT with Diode IXGH32 N60AU1 IXGH32 N60AU1S IXGH32 N60BU1S Combi Pack VCES ^C25 VCE sat tfi 600 V 600 V 600 V 60 A 60 A 60 A 2.9 V 2.9 V 2.5 V 125 ns 125 ns 80 ns Prelim inary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C

uf007

Abstract: blue Laser-Diode DFN10 G003 G008 lens laser SANYO
Contextual Info: iC-WKM M-TYPE CW LASER DIODE DRIVER ar y n i im prel Rev C1, Page 1/9 FEATURES APPLICATIONS ♦ Optimised for M-type laser diodes single supply, case grounded ♦ CW operation up to 350 mA from a single supply of 3.6 to 15 V ♦ Rapid soft start after power-on

Contextual Info: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM

l30 diode smd

Abstract: JJ SMD diode smd diode E1
Contextual Info: SIEMENS STH61008G/N/Z 1300 nm DFB Laser in Coaxial Package with SM-Pigtail, with Optical Isolator for 2.5 Gbit/s Application Dimensions in inches mm .676(17.2) .597(15.2) max 0 .236 (6.0) Pinning MD CD LD 1.77 max. (45.0) Fiber Optics Components Laser Diodes