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    ME SMD TRANSISTOR Search Results

    ME SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ME SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode SMD ED 98

    Abstract: diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor
    Text: IPB60R299CPA CoolMOSTM Power Transistor Product Summary 600 V DS 0.299 Ω R DS on ,max 22 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg PG-TO263-3 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPB60R299CPA 6R299A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 Diode SMD ED 98 diode smd ed 06 SMD TRANSISTOR MARKING ed SMD TRANSISTOR MARKING ME transistor smd marking ND smd transistor ed transistor smd marking mE smd diode ED 46 smd diode ED me smd transistor

    Diode SMD ED 98

    Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original     		PDF IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 Diode SMD ED 98 SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me

    DIODE ED 99

    Abstract: mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC
    Text: IPB60R199CPA CoolMOS Power Transistor Product Summary 600 V DS 0.199 Ω R DS on ,max 33 Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features V nC • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability


    Original     		PDF IPB60R199CPA 6R199A PG-TO263-3 PG-TO263-3 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 DIODE ED 99 mosfet 6R199 diode smd ED 35 transistor smd marking ND IPB60R199CPA smd transistor ds 65 SMD TRANSISTOR MARKING ed me smd transistor SMD TRANSISTOR MARKING ME smd diode EC

    smd marking nf

    Abstract: S21E S21E-2 2SC3429 nf smd marking
    Text: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1


    Original     		PDF 2SC3429 OT-23 500MHz) 500MHz smd marking nf S21E S21E-2 2SC3429 nf smd marking

    2SA1235

    Abstract: MF sot-23
    Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1235 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Excelent lineary DC forward current gain. 0.55 Small collector to emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SA1235 OT-23 -100mA -10mA 100Hz 2SA1235 MF sot-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3429 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low Noise Figure 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF=1.5dB,|S21e|2=16dB f=500MHz +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SC3429 OT-23 500MHz) 500MHz

    phototransistor application lux meter

    Abstract: TEPT5600 TEMT6000 TEPT4400 tept5700 schematic photo sensor me smd transistor Ambient Light Sensor TEMT6200F analog output Ambient light sensor
    Text: a nd D eve lop me nt K it Sensor Features and Benefits • 5-mm and 3-mm leaded, 0805 and 1206 surface-mount packages • Filtering epoxy option virtually eliminates infrared influence • Photo transistor output with simple, two-pin connection • Big power savings in mobile devices by measuring the ambient light


    Original     		PDF RS-232 TEMT6000 TEMT6200F VSA-PT0043-0609 phototransistor application lux meter TEPT5600 TEPT4400 tept5700 schematic photo sensor me smd transistor Ambient Light Sensor analog output Ambient light sensor

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		PDF MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR

    transistor l1w smd

    Abstract: ng52 mmic transistor E5 SMD Transistor Y04 SMD K62 smd mmic transistor E5 WG1 smd O2W transistor G7FH transistor g7x
    Text: CCS1930 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 32 dB ❏ +30 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2062 Applications


    Original     		PDF CCS1930 CMM1301 CFK2062 CCS1930 CMM1301) CFK2062) CFK2062 PB-CCS1930 transistor l1w smd ng52 mmic transistor E5 SMD Transistor Y04 SMD K62 smd mmic transistor E5 WG1 smd O2W transistor G7FH transistor g7x

    wy smd transistor

    Abstract: transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor
    Text: CCS2930 Product Information March 1996 1 of 2 2.4 to 2.5 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 30 dB ❏ +30 dBm Output Power @ 5 Volts ❏ 33% Efficient ❏ Small Size Functional Block Diagram CMM2301 CFK2062 Applications ❏ ISM Band Base Stations


    Original     		PDF CCS2930 CMM2301 CFK2062 CCS2930 CMM2301) CFK2062) PB-CCS2930 wy smd transistor transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor

    smd code A9 3 pin transistor

    Abstract: smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9
    Text: High Speed Converter Evaluation Platform HSC-ADC-EVALC FEATURES PRODUCT HIGHLIGHTS Xilinx Virtex-4 FPGA-based buffer memory board Used for capturing digital data from high speed ADC evaluation boards to simplify evaluation 64 kB FIFO depth Parallel input at 644 MSPS SDR and 800 MSPS DDR


    Original     		PDF ADP3339AKCZ-3 SKHHAKA010 CBSB-14-01 DPS050300U-P5P-TK ADR512ART ERJ-2GEJ622X ERJ-2GE0R00X ERJ-2GEJ133X ERJ-2GEJ102X ECJ-0EB0J224K smd code A9 3 pin transistor smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9

    3F1 SMD Transistor

    Abstract: 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek CCS1933 F7104 smd transistor fh
    Text: CCS1933 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features ❏ High Gain ≈ 35 dB ❏ +33 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2162 Applications


    Original     		PDF CCS1933 CMM1301 CFK2162 CCS1933 CMM1301) CFK2162) PB-CCS1933 3F1 SMD Transistor 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek F7104 smd transistor fh

    EM-553 motor

    Abstract: UT16AD40P BUS-8553 CD4583 spw 068 power supply spw 068 UT8QNF8M UT63M143 rtax2000 UT0.6uCRH
    Text: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form January 2012 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions is comprised of ten divisions – Colorado Springs, Gaisler, Motion


    Original     		PDF

    GR712RC

    Abstract: UT700 melf ZENER diode COLOR CODE 5962R102 smd zener diode color code UT8QNF8M HDMI verilog BCH RTAX2000 UT54ACS164245 "HARMONIC DRIVE"
    Text: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form December 2012 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions is comprised of ten divisions – Colorado Springs, Gaisler, Motion


    Original     		PDF

    UT16AD40P

    Abstract: RHD5932 RHD5930
    Text: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form January 2014 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions – Colorado Springs, Gaisler, Microwave Filter Components,


    Original     		PDF

    npn 2n3906

    Abstract: smd transistor marking 11H smd diode marking B3
    Text: NE1617A Temperature monitor for microprocessor systems Rev. 04 — 30 July 2009 Product data sheet 1. General description The NE1617A is an accurate two-channel temperature monitor. It measures the temperature of itself and the temperature of a remote sensor. The remote sensor is a


    Original     		PDF NE1617A NE1617A 2N3904/2N3906, fa7ADS/01 NE1617ADS/G 31-Dec-10 30-Jun-11 NE1617ADS npn 2n3906 smd transistor marking 11H smd diode marking B3

    v08 smd marking code

    Abstract: NXP date code marking nxp Standard Marking SOT1202 SOT1115 marking nxp package 74LVC1G08GW
    Text: 74LVC1G08 Single 2-input AND gate Rev. 8 — 19 October 2010 Product Specification 1. General description The 74LVC1G08 provides one 2-input AND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V applications.


    Original     		PDF 74LVC1G08 74LVC1G08 OT886 74LVC1G08GM OT353-1 74LVC1G08GW v08 smd marking code NXP date code marking nxp Standard Marking SOT1202 SOT1115 marking nxp package

    mosfet bf 966

    Abstract: smd bf BF965 BF963 Marking fs sot mg sot-143 BF964S marking 16 sot143 BF96
    Text: -T -3 I-Ä S SIEMENS AKTIENGESELLSC HAF ÖE3SbOS GDSb27'i 4 « S I E G M7E » HF-MOS-Transistoren / RF MOS Transistors N-Channel MOSFET Tetrodes Plastic Package Type Max. ratings Characteristics CO Ï? P.O. G ps > mA mW mS Package Fig. F dB V mA f MHz dB 16.5


    OCR Scan     		PDF GDSb27 BF965 OT-143 OT-142 OT-23 mosfet bf 966 smd bf BF963 Marking fs sot mg sot-143 BF964S marking 16 sot143 BF96

    smd transistor JJ

    Abstract: SMD Transistor BM smd transistor 5c BUD630 smd transistor 2a j high voltage TRANSISTOR SMD 1a 9
    Text: v S S r _ BUD630 ▼ Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature


    OCR Scan     		PDF BUD630 20-Jan-99 smd transistor JJ SMD Transistor BM smd transistor 5c smd transistor 2a j high voltage TRANSISTOR SMD 1a 9

    pmbfj174

    Abstract: PMBFJ174 to 177 SMD 4B0
    Text: • ^3 3* 1 3 1 D O S H O S b 524 N A PIER P H I L I P S / D I S C R E T E IAPX b?E PMBFJ174 to 177 D J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic m icrom iniature SOT-23 envelopes. They are intended fo r application w ith analogue switches, choppers, commutators etc. using SMD


    OCR Scan     		PDF PMBFJ174 OT-23 PMBFJ174 7Z94962 PMBFJ174 to 177 SMD 4B0

    MARKING CODE SMD IC

    Abstract: PMBT6428 PMBT6429
    Text: • DDHSflöH b33 H A P X N AMER PHIL IPS/DISCRETE PM BT6428 PM BT6429 b7E ]> SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a m icro m in ia tu re SMD plastic envelope intended fo r app lica tio n in th ic k and th in -film c irc u its {Surface M ounted Device).


    OCR Scan     		PDF bbS3131 PMBT6428 PMBT6429 PMBT6428 MARKING CODE SMD IC PMBT6429

    Untitled

    Abstract: No abstract text available
    Text: Infineon Preliminary data technologies BSP613P SIPMOS Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance ñ DS on • Avalanche rated Continuous drain current -60


    OCR Scan     		PDF BSP613P OT-223 Q67040-S4190

    K1165

    Abstract: K116 1ps25 BUK116-50L BUK116-50S transistor kA2 smd
    Text: Product specification Philips Semiconductors Logic level TOPFET SMD version of BUK106-50L/S DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin surface mounting plastic envelope, intended as a general purpose switch for


    OCR Scan     		PDF BUK106-50L/S BUK116-50L/S OT426 K1165 K116 1ps25 BUK116-50L BUK116-50S transistor kA2 smd

    BPW50

    Abstract: tda1000 74LS00A
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


    OCR Scan     		PDF PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 74LS00A