MEASURE Search Results

Contextual Info: TOSHIBA PHOTO RELAY TLP595A Unit in mm Telecommunication Data Acquisition Measurement Instrumentation The Toshiba TLP595A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a six lead plastic DIP package. The

Contextual Info: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP

Contextual Info: TOSHIBA TLP3111 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET T• I Pm v? 1■ 1■ 1■ MEASUREMENT INSTRUMENTS LOGIC IC TESTERS/MEMORY TESTERS BOARD TESTERS/SCANNERS The TOSHIBA MINI FLAT PHOTO RELAY TLP3111 is a small outline photo relay, suitable for surface m ount assembly.

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST CM 00 LTR DESCRIPTION K .125/3 POST BOTH .225 + .010 II .005 MEASURED P LA S TIC PARTS D 05 APPLY AT TO SOLDER

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC REV ISIONS D I ST 00 CM RESERVED. LTR DE S C R I P T I O N EC 0 G3 B P OS T TO W I T H S T A N D IN BOTH DIRECTIONS TOLERANCES MEASURED

TCD131D

Abstract: TC74HC04P 2SA1015-Y 2SA1015 Y
Contextual Info: C D 1 3 1 D The TCD131D is a high resolution and high sensitivity 2048-element linear image sensor. The device can be used foi OCR» POS handscanner bar-code type , and other optical measurements. The device is operated by only 12V power supply. The device is mounted in 22-pin Cerdip package

Contextual Info: PHOTO RELAY TLP595G T L P 5 9 5 G TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595G consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.

Contextual Info: PHOTO RELAY TLP595B T IP 5 9 5 B TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.

TOLD9231F

Contextual Info: TOSHIBA VLD Technical Data TOLD923 F Units in: mm Standard index guided type MQW InGaAlP VLD Package flange: 09mm Applications include: Bar code scanners, measurement systems, laser pointer, etc. Beam Emission Surface r Pin Connection 1. Laser diode cathode

ro4003 8mil

Abstract: QFN 4X4 aug22
Contextual Info: Advance Product Information Aug.22, 2006 2-20 GHz LNA with AGC TGA2513-SM Key Features • • • • • • • The TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,

Contextual Info: Advance Product Information March 4, 2005 2-20 GHz LNA with AGC TGA2513-SM Key Features • • • • • • • The TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,

Contextual Info: Advance Product Information November 26, 2002 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501-EPU Key Features and Performance • • • • • • • Preliminary Measured Performance Primary Applications Bias Conditions: VD = 8V ID = 1.2A 20 S21 28

Contextual Info: bq2945 Gas Gauge IC with SMBus Interface Features General Description ➤ Provides accurate measurement of available charge in NiCd, NiMH, and Li-Ion batteries The bq2945 Gas Gauge IC With SMBus Interface is intended for battery-pack or in-system installation to maintain an accurate record

OC74

Contextual Info: Advance Product Information September 27, 2004 10Gb/s Wide Dynamic Range Differential TIA TGA4817-EPU Key Features and Performance • • • • • • • • Preliminary Measured Performance Bias Conditions: V+=3.3V I+=70mA 76 Differential Zt dB-Ohm

Contextual Info: Advance Product Information July 16, 2003 6 - 18 GHz 2.8 Watt, 24 dB Power Amplifier TGA2501-EPU Key Features and Performance • • • • • • • Preliminary Measured Performance Primary Applications Bias Conditions: VD = 8V ID = 1.2A 20 S21 28 S21 dB

GaAs S2p

Abstract: hemt .s2p
Contextual Info: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V

TGA4508-EPU

Contextual Info: Advance Product Information February 19, 2003 Ka Band Low Noise Amplifier TGA4508-EPU Key Features • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3 V, Id = 40 mA Ga in & R etu rn L o ss d B 40 30 Gain 20

C3 marking code sot 223

Abstract: MMIC marking code C3 sot89 cs 1694
Contextual Info: TQP369182 DC-6 GHz Gain Block Applications •      Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless Product Features          SOT-89 Package

Contextual Info: Advance Product Information September 24, 2003 12-18 GHz Ku-Band 2-Stage Driver Amplifier TGA2506-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 40 mA • Point to Point Radio • Military Ku-Band

Contextual Info: TGA4823-2-SM 9.9 - 12.5 Gb/s Linear/Limiting Optical Modulator Driver Key Features • • • • • • • • Measured Performance Up to 10 Vpp Linear Output Voltage > 12 Vpp Limiting Mode Output Voltage Gain: 19 dB Integrated High Frequency Bias Tee

Contextual Info: Advance Product Information August 27, 2003 10Gb/s Differential TIA TGA4816-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ

Contextual Info: Advance Product Information July 11, 2003 Q-Band Driver Amplifier TGA4042-EPU Key Features • • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 168 mA • Point-to-Point Radio • Military Radar Systems

Contextual Info: TLP2768 Photocouplers GaAℓAs Infrared LED & Photo IC TLP2768 1. Applications • Factory Automation FA • Plasma Display Panels (PDPs) • Measurement Instrumentation 2. General The Toshiba TLP2768 consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain,

DIODE MARKING B82

Abstract: CMZB100 CMZB330 CMZB75
Contextual Info: CMZB68~CMZB390 TOSHIBA Zener Diode Silicon Junction CMZB68~CMZB390 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation 0.65 ± 0.2 Unit: mm • Zener voltage: VZ = 68 to 390 V • Suitable for high-density board assembly due to the use of a small