MEC 1300 Search Results

mec cgs

Abstract: 10 Ohms Resistors 5000 watts Meggitt Electronic Components type 51
Contextual Info: MEC CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power, Heavy Duty Wirewound TYPE MX SERIES This range of heavy duty resistors is available with metal enclosures manufactured to IP20 and continuous ratings between 200 watts

mcc 90-12

Abstract: MCC 90-16 mcc 250 thyristor abb mcc 90-12 ABB thyristor modules MCC 65 ABB mcc MCC 90-06 io 8 Thyristor mcc mcc 90-08 ABB thyristor modules
Contextual Info: A S E A BROUN/ABB SEMICON Netz-Thyristor-Module aJ- F | 00Mfl30fl ouuuiiii i l ] Phase control Thyristor-Modules T - 2 5 - 2 3 EE! Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

4558D

Abstract: 4556 op-amp IC 4558 surround sound circuit REGULATOR IC l7812cv TDA2822M SMD TYPE circuit inter CV 203 NE555N IC AUDIO FILTER NJM2060 "cross reference" IC L7912CV MC34063P1
Contextual Info: NJR CORPORATION Product Reference Overview SEMICONDUCTORS LINEAR RF & WIRELESS PACKAGING 27 PART NUMBER SYSTEMS 33 CROSS REFERENCE 35 AUDIO ICs 8 COMMUNICATION ICs 9 VIDEO ICs 10 CMOS SWITCH 11 MCU & PERIPHERAL 13 LCD DRIVER 15 LSI/OTHER 16 SPECIAL FUNCTIONS

MEC 1300

Abstract: WW05A5SRBGC4-P 5mm red led temperature coefficient A 8218
Contextual Info: Data Sheet For 5mm Red / Green / Blue Three Color LED Part No: WW05A5SRBGC4-P This specifications is subject to change without notice. Reprinting and copying of this specifications without prior written permission from MOBICON HOLDINGS LTD are not permitted.

mcc 90-12

Abstract: MCC 90-16 abb mcc 90-12 ASEA thyristor ABB thyristor modules mcc 250 thyristor MCC 90-15 ABB thyristor modules MCC 65 MCC 90-14 MCC 90
Contextual Info: A S E A BROüJN/ABB "T -2 L 5 -2 3 SEMICON ES! Phase control Thyristor-Modules Netz-Thyristor-Module D aten p ro D iode o d e r T h y ris to r/d a ta p e r d io d e o r th y r is to r /les ca racté ristiq u es se ra p p o rte n t à 1 d io d e ou à 1 th y ris to r

163n

Contextual Info: DRAWING No.: Customer Information Sheet I I SHEET 2 OF ? I M22-6013005 IF IN DOUBT - ASK | C | NOT TO SCALE THIRD ANGLE PROJECTION ALL DIMENSIONS IN mm I. ALL T O L E R A N C E S ARE ±0.20 UN LE SS O T H E R W I S E STATED. •60. 20±0. 30■58.00- - fija-

Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE NDL8800P 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS ¿120 fjm InGaAs PIN PHOTO DIODE MINI-DIL PIGTAILED MODULE DESCRIPTION NDL8800P is an InGaAs PIN photo diode module with single mode fiber. NDL8800P is packaged in ceramic mini

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

NDL5310

Abstract: MEC 1300
Contextual Info: N E C ELECTRONICS INC hS E D • h4S7S2S QQBÔLSb n s «NECE DATA SHEET |\|EC L,GHT EMITTING d i o d e NDL5310 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LED DESCRIPTION NDL5310 is an InGaAsP double heterostructure long wavelength L E D . It can achieve high optical output power.

NZDSF

Abstract: Telcordia GR-20-CORE GR-20-CORE samsung loose tube cable 216 fiber armored
Contextual Info: Samsung Fiberoptics Products Loose Tube Cable Non-Armored Design SAMSUNG Loose Tube Non-Armored Cable SC-LMN 100/ 200 offers highly reliable, industry standard performance and accommodates the flexible and versatile needs for outside plant cables for today’s most demanding and

T 4512 H diode

Abstract: ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 7508H diode T 3512 H V10-40 vez300 CLA 80 E 1200
Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

TA 8825 AN

Abstract: nec 8825 cs 351-25
Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _/¿PD16437 1/16-DUTY LCD CONTROLLER/DRIVER T h e juPD 16437 is a c o n tro lle r/d riv e r th a t c a n d is p la y a 1/16-duty d o t m a trix L C D . s e g m e n t o u tp u t lin e s a n d 16 c o m m o n o u tp u t lin e s , s o th a t 12 c o lu m n s

Thyristor ABB ys 150

Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

MEC 1300

Abstract: NDL5310 NDL5300 NDL5302 NDL5312 NDL5314 L53 led TO18 package LED 1300 nm
Contextual Info: N EC ELECTRONI CS INC b2E ]> • b4E75B5 0 0 3 ö l S b n s HNECE DATA S H EET |\|EC L , G H T E M I T T I N G ELECTRON DEVICE D I O D E N D L5310 1 300 nm O PTICA L FIBER COM M UNICATIONS InGaAsP DOUBLE H ETERO STRUCTURE LED D ESCRIPTIO N NDL5310 is an InGaAsP double heterostructure long wavelength L E D . It can achieve high optical output power.

STAC4932

Abstract: STAC4932F st marking code STAC244F 1715
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

MEC 1300

Abstract: 2x100mA STAC244F
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

MEC 1300

Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European

STAC4932

Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European

STAC4932

Abstract: STAC4932B 1000wf st marking code
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10%

STAC4932

Abstract: STAC4932B
Contextual Info: STAC4932F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10%

MEC 1300

Abstract: STAC4932 STAC4932B 1000WF
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions : 1 msec - 10% ■ In compliance with the 2002/95/EC European

lt 715 1111

Abstract: st zo 607
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEA TU R E • P A C K A G E DIMENSIONS in mm High gain, low noise • Small reverse transfer capacitance • C an operate at low voltage ¥ A B S O LU TE MAXIMUM RATINGS (Ta = 25 °C)

P35-152-19W9

Abstract: motherboard repair Chip level for intel motherboard cpu motherboard repair Chip level PC core 2 duo MOTHERBOARD CIRCUIT diagram intel chipset Q35 motherboard repair circuit intel chipset g 41 motherboard repair circuit computer motherboard circuit diagram 4-pin 12v dual core motherboard repair Intel Core 2 Duo E4300 intel motherboard repair
Contextual Info: PROCELERANT ENDURA Q35 MOTHERBOARD PRODUCT MANUAL PL35Q www.radisys.com 007-03198-0000 • December 2007 Release history Release -0000 Date December 2007 Description First release. Copyright 2007 by RadiSys Corporation. All rights reserved. Portions of this manual are copyrighted by the PCI Industrial Computer Manufacturers Group, and are reprinted with permission.

NEC Ga FET marking L

Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Contextual Info: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm