MEDICAL APPLICATION OF LASER Search Results

500/250/arc xenon flash lamps

Contextual Info: Electron Tube Products Condensed Catalog HAMAMATSU PHOTONICS K.K. Development and production centers for light sensors, light sources, and application-specific products utilizing light to support a wide range of needs in medical diagnosis/treatment, chemical analysis,

808nm 1W laser diode

Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
Contextual Info: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical

red laser pointer

Contextual Info: Laser Products o Visible Laser Modules Device No Ta=25 C Color Supply voltage Wavelength 11.0 10.0 Application black - o 10.55 4.3 Output power o 4.8 M9Xp0.5mm red(+) PCB board HLDPM10-650-1 red laser 3V 650 nm 1 mW laser pointer. HLDPM10-650-3 red laser

laser diode 635nm

Abstract: Hitachi DSA00164
Contextual Info: HL6320G InGaAsP Laser Diodes ADE-208-502A Z 2nd.Edition June 1997 Application • Laser levelers • Measurement Features • Optical power : 10mW CW • Visible wavelength : λp=635nm typ. Internal Circuit 1 3 PD LD 2 HL6320G Absolute Maximum Ratings (TC = 25°C)

Hitachi DSA00164

Contextual Info: HL6319G InGaAsP Laser Diodes ADE-208-479B Z 3rd. Edition June 1997 Application • Laser levelers • Measurement Features • Optical power : 10mW CW • Visible wavelength : λp=635nm typ. Internal Circuit 1 3 PD LD 2 HL6319G Absolute Maximum Ratings (TC = 25°C)

Contextual Info: HL6734FM Visible High Power Laser Diode HITACHI ADE-208-517A Z Target Specification 2nd Edition February 1998 Description The HL6734FM is a 0.68 Jim band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types

diode hitachi

Abstract: Hitachi DSA002742
Contextual Info: HL6734FM Visible High Power Laser Diode ADE-208-517B Z Target Specification 3rd Edition April 1998 Description The HL6734FM is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types

Contextual Info: HVD365 Variable Capacitance Diode for VCO REJ03G0501-0300 Rev.3.00 Jan 24, 2006 Features • High capacitance ratio and good C-V linearity. • Super small Flat Lead Package SFP is suitable for surface mount design. Ordering Information Type No. HVD365 Laser Mark

2 Wavelength Laser Diode

Abstract: spl pl90 0 laser diode driver for free space communication PULSED LASER DIODE DRIVER pulsed laser diode GaAs 905 2Y98 2Y85 laser driver free space communication Laser-Diode 808 1550 laser diode
Contextual Info: OSRAM OPTO SEMICONDUCTORS H IGH POWER LASER DIODES OSRAM I N FOCUS: OSRAM OPTO SEMICONDUCTORS HIGH POWER LASER DIODES Useage of high power semiconductor lasers is growing rapidly in the industrial and automotive markets, primarily for pumping solidstate lasers Nd:YAG at

OCLARO

Abstract: hl6323
Contextual Info: Data Sheet HL6323MG AIGaInP Laser Diode Outline 639nm/35mW Features: • Optical output powr: 35mW CW *1  Visible light output:639nm Typ.  Small package: 5.6mm  TM mode oscillation  Single transverse mode Applications Internal Circuit 

Contextual Info: Data Sheet HL40053MG GaN Laser Diode 404nm/500mW Outline Features: • Optical output power: 400mW CW • Violet lasing: 398~410nm • Low operating current: 370mA Typ. • Low operating voltage: 4.9V Max. • Package: φ5.6mm • Multiple transverse mode

Contextual Info: Data Sheet HL7301MG/02MG InGaAsP Laser Diode 730nm/50mW Features: Outline • Optical output power: 40mW CW  Infrared light output: 730nm Typ.（Po=40ｍW)  Single transverse mode  Low operation current : 75mA Typ (Po=40mW)  TE mode oscillation

nec laser diode OTDR

Abstract: NEC DIODE LASER PX10160E nec laser diode
Contextual Info: DATA SHEET LASER DIODE NX7639BB-AA 1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7639BB-AA is a 1 625 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.

NX5317EH

Contextual Info: DATA SHEET LASER DIODE NX5317EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.

monitor nec

Abstract: PX10160E
Contextual Info: DATA SHEET LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION

FTTH

Abstract: NX6410GH PX10160E A1490
Contextual Info: DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION

Contextual Info: DATA SHEET LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION

Contextual Info: DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION

Contextual Info: Data Sheet HL6323MG AIGaInP Laser Diode 639nm/30mW Features: Outline • Optical output power: 30mW CW *1  Visible light output:639nm Typ.  Small package: 5.6mm  TM mode oscillation  Single transverse mode Applications Internal Circuit 1

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

PX10160E

Abstract: A1490
Contextual Info: DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

Contextual Info: DATA SHEET LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION

NX6411GH-AZ

Abstract: PX10160E
Contextual Info: LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 2.5 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)