MEDIUM LEVEL POWER DIODE Search Results

transistor Amp 3055L

Abstract: 3055L 3055L transistor marking 3055l amp 3055l motorola an569 thermal MMFT3055EL MOTOROLA TRANSISTOR T2 2N3904 AN569
Contextual Info: MOTOROLA Order this document by MMFT3055EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055EL Motorola Preferred Device SOT–223 for Surface Mount MEDIUM POWER LOGIC LEVEL TMOS FET

Contextual Info: MMIC Medium Level Mixer, 1700 - 2000 MHz MD54-0003 V3 Features • • • • • • Functional Diagram Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm DC - 200 MHz IF Bandwidth

Contextual Info: LEAD FREE MMIC Medium Level Mixer 1700 - 2000 MHz MAMXSS0010 V1 Features • • • • • • • • • • Functional Diagram Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm

DCS1800

Abstract: M513 MD54-0003
Contextual Info: MMIC Medium Level Mixer 1700 - 2000 MHz MD54-0003 V4 Features • • • • • • Functional Diagram Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm DC - 200 MHz IF Bandwidth

DCS1800

Abstract: M513 MD54-0003
Contextual Info: MD54-0003 MMIC Medium Level Mixer 1700 - 2000 MHz Rev. V5 Functional Diagram Features • • • • • • Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm DC - 200 MHz IF Bandwidth

DCS1800

Abstract: M513 MAMXSS0010 MAMXSS0010SMB MAMXSS0010TR MD54-0003
Contextual Info: RoHS Compliant MMIC Medium Level Mixer 1700 - 2000 MHz MAMXSS0010 V2 Features • • • • • • • • • • Functional Diagram Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm

TDK common mode choke application note

Abstract: CRCW12063012F AN-1345 C4532X7R2A225M C4532X7R3A103K LM5025A
Contextual Info: National Semiconductor Application Note 1345 Robert Bell December 2004 Introduction presently finding extensive use in medium level power converters in the 50 to 200W range. The LM5025A evaluation board is designed to provide the design engineer with a fully functional power converter

LM5025MM

Abstract: switch mode transformer CRCW12063012F IRF6217 LM5025 C4532X7R2A225M C4532X7R3A103K LM5041 TDK common mode choke application note AN1307
Contextual Info: National Semiconductor Application Note 1307 Robert Bell January 2004 Introduction presently finding extensive use in medium level power converters in the 50 to 200W range. The LM5025 evaluation board is designed to provide the design engineer with a fully functional power converter

DCS1800

Abstract: M513 MAMXSS0010 MAMXSS0010SMB MAMXSS0010TR MD54-0003 MD540003
Contextual Info: MAMXSS0010 MMIC Medium Level Mixer 1700 - 2000 MHz Rev. V2 Functional Diagram Features • • • • • • • • • • Low Conversion Loss Input Power @ 1 dB Compression: +21 dBm Typical Two-Tone IM Ratio: > 50 dBc LO Drive Level: +11 to +23 dBm DC - 200 MHz IF Bandwidth

Contextual Info: an A M P com pany MMIC Medium Level Mixer 1700-2000 MHz MD54-0003 V2.00 Features • • • • • • SO-8 Low Conversion Loss +21 dBm Input Power @ 1 dB Compression Typical Two-Tone IM Ratio of >50 dBc LO Drive Level: +11 to +23 dBm DC - 200 MHz IF Bandwidth

DCS1800

Abstract: MD54-0003 MD54-0003RTR MD54-0003SMB MD54-0003TR MS-012-AA
Contextual Info: MMIC Medium Level Mixer 1700 - 2000 MHz MD54-0003 V2.00 SO-8 Features ● ● ● ● ● ● PIN 8 Low Conversion Loss +21 dBm Input Power @ 1 dB Compression Typical Two-Tone IM Ratio of ≥50 dBc LO Drive Level: +11 to +23 dBm DC - 200 MHz IF Bandwidth Low Cost Plastic SOIC Package

D540003

Contextual Info: Afocm Coming Attractions W an A M P com pany MMIC Medium Level Mixer 1700 - 2000 MHz MD54-0003 V 2 .0 0 Features • • • • • • SO-8 Low Conversion Loss +21 dBm Input Power @ 1 dB Compression Typical Two-Tone IM Ratio of >50 dlic LO Drive Level: +11 to +23 dBm

Contextual Info: 2DB1184Q 50V PNP MEDIUM POWER TRANSISTOR IN TO252 Features Mechanical Data • • • BVCEO > -50V IC = -3A High Continuous Collector Current ICM = -4.5A Peak Pulse Current • • Epitaxial Planar Die Construction • • Moisture Sensitivity: Level 1 per J-STD-020

600va ups

Abstract: lz 01 hp 600va ups Fujitsu LZ lz 150 190VA LZ-HSE diode 77G
Contextual Info: FTR-K1 SERIES POWER RELAY 1 POLE - 1/3/5/10A Medium Load Control LZ Series n FEATURES UL, CSA, SEV recognized l Contact rating types - Low level to 10 amps switching l Standard and high sensitivity types available l High surge strength version available l

MA40176-186

Abstract: MA4E190-276 MA40083-213 MA4E926-276 SCHOTTKY BARRIER DIODE MA40105-276 MA4E920 medium barrier schottky mw 137 MA40030
Contextual Info: m an A M P company Stripline Packaged Schottky Mixer Diodes V 2.00 Case Style 213 Features • • • • Large Choice of Available Packages Uniform RF Characteristics Screening to JANTXV Level Available Low, Medium and High Barrier Diodes Description Three families of stripline packaged mixer diodes are

MA40110

Abstract: MA4E913 MA40160 MA40150
Contextual Info: MÛK&A m an A M P company Ceramic Packaged Schottky Mixer Diodes V 2.00 Case Styles Features • Choice of Three Available Packages • Can Be Screened to JANTXV Levels Description Three families of ceramic packaged Schottky diodes are offered. All pans are thermal compression bonded. The

a401052

Abstract: A40166-276 A4017 A40048
Contextual Info: an AM P com pany Stripline Packaged Schottky Mixer Diodes V3.00 Features • • • • Case Style 213 Large Choice o f Available Packages Uniform RF Characteristics Screening to JANTXV Level Available Low, Medium and High Barrier Diodes Description Three families o f stripline packaged mixer diodes are

HSCH5530

Abstract: HSCH5511 HSCH-5531 HSCH-5511
Contextual Info: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were

Diode SE-05

Contextual Info: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly forty years [1]. Earlier designs were

diode GG 79

Abstract: HSCH-5511 HSCH5530 HSCH-5531 HSCH5510
Contextual Info: Harmonic Mixing with the HSCH-5500 Series Dual Diode Application Note 991 Introduction The Antiparallel Pair The difficulty of generating local oscillator power at higher frequencies has stimulated interest in conversion with subharmonic local oscillators for nearly

MA4E913

Abstract: MA40110
Contextual Info: m an AMP company Ceramic Packaged Schottky Mixer Diodes V3.00 Features Case Styles • Choice of Three Available Packages • Can Be Screened to JANTXV Levels Description Three families of ceramic packaged Schottky diodes are offered. All pans are thermal compression bonded. The

hp 5082 2711

Abstract: 5082-2711
Contextual Info: HEWLETT-PACKARD i fT A J l tx x L l H 50E C MP N T S E W D E3 4447SÔ4 DOOSt . 53 T 6082-2273/74 5082-2295-98 5082-2350/51 5082-2400/01 5082-2520/21/05/66 5082-2701/02/06/07 5082-2711-14/23-24 5082-2817/18 SCHOTTKY BARRIER DIODES FOR MIXERS AND DETECTORS L E T T

Contextual Info: A jf e a m Stripline Packaged Silicon Schottky Mixer Diodes Features • LARGE CHOICE OF AVAILABLE PACKAGES ■ UNIFORM RF CHARACTERISTICS ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER

MA4882

Abstract: MA4852 MA40153
Contextual Info: Afocoti Axial Lead Glass Packaged Silicon Schottky Mixer Diodes Features • HIGH RELIABILITY ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER DIODES AVAILABLE ■ LOW NOISE FIGURE THROUGH 12