SLE66R35R
Abstract: D8172 SLE66R35 66R35R SLE66 SLE66R35C serial communication of cardreader ISO 14443-2 66R35I 66R35E7
Text: SLE 66R35 Intelligent 1 kByte Memory Chip with Mifare compatibility and 4-byte UID SLE 66R35I Intelligent 1 kByte Memory Chip with Mifare compatibility and 4-byte Fixed Non Unique IDentification Number SLE 66R35R Intelligent 1 kByte Memory Chip with Mifare compatibility and
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66R35
66R35I
66R35R
66R35
SLE66R35
66R35I,
66R35R
66R35E7
SLE66R35R
D8172
SLE66
SLE66R35C
serial communication of cardreader
ISO 14443-2
66R35I
66R35E7
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D8172
Abstract: No abstract text available
Text: SLE 66R35 Intelligent 1 kByte Memory Chip with Mifare compatibility and 4-byte UID S LE 66R35I Intelligent 1 kByte Memory Chip with Mifare compatibility and 4-byte Fixed Non Unique IDentification Number S LE 66R35R Intelligent 1 kByte Memory Chip with Mifare compatibility and
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66R35
66R35I
66R35R
66R35
SLE66R35
66R35I,
66R35R
66R35E7
D8172
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mask eeprom
Abstract: eeprom protect
Text: Chapter 1 4 Kbyte EEPROM Module S12EETS4KV1 1.1 Introduction This document describes the EETS4K module which is a 4 Kbyte EEPROM (nonvolatile) memory. The EETS4K block uses a small sector Flash memory to emulate EEPROM functionality. It is an array of electrically erasable and programmable, nonvolatile memory. The EEPROM memory is organized as 2048
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S12EETS4KV1)
mask eeprom
eeprom protect
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a737
Abstract: CD433 A769 A431 Programmable Voltage Reference a768 d480 A431 A432 A433 AT88SC1003
Text: 1. Features • Compatible with Many Existing Memory Card Applications • 1-Kbit EEPROM User Memory • • • • • – Two 256 x 1 Application Zones – One 512 x 1 Application Zone – Protected by Security Logic – Vpp Internally Generated for Single Voltage Operation
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64-bit
2035C
a737
CD433
A769
A431 Programmable Voltage Reference
a768
d480
A431
A432
A433
AT88SC1003
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roundup
Abstract: CY2308 CY7C1352 MT90503
Text: ZLAN-14 Applications of the MT90503 External SRAM Memory Application Note Contents Issue 1 1.0 Introduction 2.0 Control and Data Memory 2.1 Control Memory Interface 2.2 Data Memory Interface 3.0 Clock Distribution 4.0 Calculating External SRAM Required 4.1 Control SRAM Required
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ZLAN-14
MT90503
MT90503
MSAN-222,
CY2308
roundup
CY7C1352
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SLE66R35
Abstract: 66R35N MCC8 66R35 mcc8-2-3 14443 wafer card programmable SLE66R35N memory card circuit diagram SLE66R35E7
Text: SLE 66R35 Intelligent 1 kByte Memory Chip with Mifare compatibility and 4 byte UID SLE 66R35N Intelligent 1 kByte Memory Chip with Mifare compatibility and 4 byte Fixed Non Unique IDentification Number Short Product Information November 2010 Preliminary Chip Card & Security
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66R35
66R35N
66R35N
SLE66R35N
SLE66R35
MCC8
66R35
mcc8-2-3
14443
wafer card programmable
memory card circuit diagram
SLE66R35E7
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AT88RF080
Abstract: RFID reader source code AT93C46SC AT90SC3232CS AT90SCS AT88SC0204C AT88SC0404C AT88SC101 AT88SC102 AT88SC1616C
Text: SECURE IC PRODUCT GUIDE CryptoMemory : Asynchronous Secure Memory Description July 2002 Part Number Organization Voltage AT88SC0104C AT88SC0204C 4 32 x 8 4 (64 x 8) 2.7V–5.5V 2.7V–5.5V 1 Kbit User Memory with Authentication and Encryption 2 Kbit User Memory with Authentication and Encryption
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AT88SC0104C
AT88SC0204C
AT88SC0404C
AT88SC0808C
AT88SC1616C
AT88SC3216C
0233Q-07/02-6M
AT88RF080
RFID reader source code
AT93C46SC
AT90SC3232CS
AT90SCS
AT88SC0204C
AT88SC0404C
AT88SC101
AT88SC102
AT88SC1616C
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P5C1
Abstract: ST90158 R226 R227 R228 R255 p6c0
Text: APPLICATION NOTE ST9+ EXTERNAL MEMORY INTERFACE CONFIGURATION by Microcontroller Division Applications 1 INTRODUCTION This application note presents the different ST9+ resources for configuring and initializing its external memory interface. The ST9+ has a single 4 Mbyte memory space segmented in 64 segments of 64 Kbytes, plus
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R226
Abstract: R227 R228 R255 fch 1621 DS2N
Text: APPLICATION NOTE ST9+ EXTERNAL MEMORY INTERFACE CONFIGURATION by Microcontroller Division Applications 1 INTRODUCTION This application note presents the different ST9+ resources for configuring and initializing its external memory interface. The ST9+ has a single 4 Mbyte memory space segmented in 64 segments of 64 Kbytes, plus
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0X00
Abstract: TNETA1561
Text: TNETA 1561 Programmer’s Reference Guide Revision 1.0 1 Preliminary Data 1. Data Structures 1.1 Transmit Side The TNETA 1561 transmit side data structures reside both in the host memory and the local control memory. Host Memory Transmit Descriptor Rings Transmit Completion Rings
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TNETA1561
0X00
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A769
Abstract: a766 CD433 D772 d768 a737 AX. A431 d480 cd1536
Text: Features • Compatible with Many Existing Memory Card Applications • 1-Kbit EEPROM User Memory • • • • • – Two 256 x 1 Application Zones – One 512 x 1 Application Zone – Protected by Security Logic – Vpp Internally Generated for Single Voltage Operation
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64-bit
2035B
A769
a766
CD433
D772
d768
a737
AX. A431
d480
cd1536
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serial flash M25P10
Abstract: M25P10 ST10
Text: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)
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M25P10
M25P10
serial flash M25P10
ST10
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Am29 Flash Family
Abstract: spansion rom 32 mbit Parallel NOR Flash Market AM29 NOR FLASH 1.8v 256 mb nor flash
Text: Flash Memory: An Overview Application Note 1. Introduction All computer-based systems contain memory. Memory is where information is stored while waiting to be operated on by the Central Processing Unit CPU of the computer. There are two types of memory: volatile
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Untitled
Abstract: No abstract text available
Text: M25P10 1 Mbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 1 Mbit of Flash Memory ■ Page Program up to 128 Bytes in 3 ms (typical) ■ Sector Erase (256 Kbit) in 1 s (typical) ■ Bulk Erase (1 Mbit) in 2 s (typical)
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M25P10
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Untitled
Abstract: No abstract text available
Text: 0S1992/DS1993/DS1994 D S 1 9 9 2 /D S 1 9 9 3 DALLAS SEMICONDUCTOR 1 Kbit/4Kbit Touch Memory DS1994 4Kbit Plus Time Touch Memory SPECIAL FEATURES • Standard 16 mm diameter and 1-W ire protocol ensure compatibility with Touch Memory family • 4096 bits of read/write nonvolatile memory DS1993
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0S1992/DS1993/DS1994
DS1994
DS1993
DS1994)
DS1992)
256-bit
DS1994
007flbfl
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Untitled
Abstract: No abstract text available
Text: D S 1992 /D S 19 9 3 /D S 1994 DS1992/DS 1993 DALLAS SEMICONDUCTOR 1 Kbit/4Kbit Touch Memory DS1994 4Kbit Plus Time Touch Memory SPECIAL FEATURES • Standard 16 mm diameter and 1-W ire protocol ensure compatibility with Touch Memory family • 4096 bits of read/write nonvolatile memory DS1993
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DS1992/DS
DS1994
DS1993
DS1994)
DS1992)
256-bit
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DS1994
Abstract: DS1993L-F5
Text: DS1992/DS1993/DS1994 A DALLAS W SEMICONDUCTOR DS1992/DS1993 1 Kbit/4Kbit Memory ¡Button DS1994 4Kbit Plus Time Memory {Button SPECIAL FEATURES • 4096 bits of read/write nonvolatile memory DS1993 and DS1994 • 1024 bits of read/write nonvolatile memory {DS1992)
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DS1992/DS1993/DS1994
DS1993
DS1994)
DS1992)
256-bit
DS1994
DS1993L-F5
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4-Bit Microcomputers
Abstract: sharp calculator SM3514
Text: Lineup of 4-Bit Microcomputers For Data Bank Use SHARP Product Selection By Built-In Memory Size Built-in data RAM(bit) Approximate telephone listing 1 • 1 1 64 k c 400 persons memory (SM3512) 1 1 1 1 1 1 (SM3508) 24 k 156 persons memory ÌCSM3518} 1 1
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SM3512)
SM3508)
CSM3518}
SM3509)
SM3517)
SM3503)
SM3504)
SM3514XSM3515XSM351Î
SM3507)
SM3513
4-Bit Microcomputers
sharp calculator
SM3514
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100nJ capacitor
Abstract: capacitor 100nj 100 SAA55XX Philips TV front end module SAA5543PS 12x10 character 12x10 on screen display 87F2h RESISTOR COLOUR CODING th02
Text: Philips Semiconductors Preliminary specification TV microcontrollers with Closed Captioning CC and On-Screen Display (OSD) CONTENTS 15.1 l2C-bus port selection 16 MEMORY INTERFACE Memory structure Memory mapping Addressing memory Page clearing 1 FEATURES
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rolling display using led matrix
Abstract: SAA5562PS SAA5533 12x10 character 12x10 on screen display EIA-608 colour television block diagram microcontroller based dot matrix message display philips 23 rgb led moving message display
Text: Philips Semiconductors Preliminary specification Enhanced TV microcontrollers with On-Screen Display OSD CONTENTS SAA55xx 17 MEMORY INTERFACE Memory structure Memory mapping Addressing memory Page clearing 1 FEATURES 2 GENERAL DESCRIPTION 3 QUICK REFERENCE DATA
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1982 1 Kbit A dd-O nly Touch Memory SPECIAL FEATURES COMMON TOUCH MEMORY FEATURES • 1024-bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory-lasered and tested 64 -bit registra
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DS1982
1024-bits
256-bit
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Untitled
Abstract: No abstract text available
Text: June 1997 FLASH MEMORY LH28F016SANS-70 Ver. 1.0 SHARP CORPORATION Engineering Department 2 Rash Memory Development Center Tenri Integrated Circuits 1C Group 1 LH28F016SANS-70 16 Mbit (1 Mbit x 16, 2 Mbit x 8) Flash Memory CONTENTS FEATURES PAGE . 2
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LH28F016SANS-70
LH28Fxxx
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ch1f
Abstract: fe05
Text: General Retease Specification — MC68HC 9 08EB8 Section 2. Memory Map 2.1 Contents 2.2 Introduction 41 2.3 I/O Section 43 2.2 Introduction The CPU08 can address 64 Kbytes of memory space. The memory map, shown in Figure 2-1 , includes: • 7,680 bytes of FLASH EEPROM
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MC68HC
08EB8
CPU08
08EB8
ch1f
fe05
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80C51
Abstract: MSU2958 MSU2958C16 MSU2958C25 MSU2958C40 ZD 103
Text: • ■ MSU2958 Preliminary MOSEL VITEUC INC. ü September 1999 8 Product List - Bit Micro-controller with 3SKB flash embedded MSU2958 C 1 6 ,16 MHz 32 KB internal memory MCU MSU2958 C25, 25 MHz 32 KB internal memory MCU MSU2958 C40,40 MHz 32 KB internal memory MCU
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MSU2958
MSU2958C16
MSU2958C25,
MSU2958C40
MSU2958
MSU2958Ã
MSU29:
58ihh
80C51
MSU2958C25
ZD 103
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