3906 PNP TRANSISTOR
Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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MRF9820T1
Abstract: 16 SOT-143 MOTOROLA
Text: MOTOROLA Order this document by MRF9820T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line GaAs MESFET AGC Amplifier MRF9820T1 The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device
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MRF9820T1/D
MRF9820T1
MRF9820T1
16 SOT-143 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: SPA1118Z SPA1118Z 850MHz 1Watt Power Amplifier with Active Bias 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features Optimum Technology Matching Applied GaAs HBT VCC GaAs MESFET N/C InGaP HBT
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SPA1118Z
850MHz
SPA1118Z
DS111217
ECB-101161
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RMM2080
Abstract: power amplifier 2-18GHZ 18GHz GC-1 dual-gate
Text: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier General Description Features The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-µm gate MESFET devices fabricated on a
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RMM2080
RMM2080
4x125
4x250
3x500
power amplifier 2-18GHZ
18GHz
GC-1
dual-gate
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SPB2026Z
Abstract: SPB2026ZSR
Text: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features GaAs HBT p GaAs MESFET Applications V c c = 5V Functional Block Diagram SiGe BiCMOS
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SPB2026Z
SPB2026Z
SOF-26
SPB2026ZSQ
SPB2026ZSR
SPB2026ZPCK1
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Untitled
Abstract: No abstract text available
Text: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier General Description Features The Fairchild Semiconductor’s RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ionimplanted, 0.5-µm gate MESFET devices fabricated on a
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RMM2080
RMM2080
4x125Â
4x250Â
3x500Â
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Untitled
Abstract: No abstract text available
Text: MICROWAVE HMC308 CORPORATION GENERAL PURPOSE 30 mW GaAs AMPLIFIER 1.3 - 3.0 GHz V00.0900 J UNE 2000 AMPLIFIERS 1 Features General Description P1dB Output Power: + 15 dBm @ +5V The HMC308 is a low cost MESFET MMIC amplifier that operates from a single +3 to +5V
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HMC308
HMC308
2HMC308
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dual-gate
Abstract: GC122
Text: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Fairchild Semiconductor's RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a
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RMM2080
RMM2080
4x125
4x250
3x500
dual-gate
GC122
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RAYTHEON
Abstract: an 7073 Raytheon Company RMM2080 dual-gate GC122
Text: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating
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RMM2080
RMM2080
4x125
4x250
3x500
RAYTHEON
an 7073
Raytheon Company
dual-gate
GC122
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GC122
Abstract: DC TO 18GHZ RF AMPLIFIER MMIC mmic distributed amplifier RAYTHEON RMM2080 high power fet amplifier schematic wideband automatic gain control S11510 dual-gate
Text: RMM2080 2-18 GHz Wideband Variable-Gain Driver Amplifier PRODUCT INFORMATION Description Features The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control capability. The circuit incorporates ion-implanted, 0.5-µm gate MESFET devices fabricated on a semi-insulating
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RMM2080
RMM2080
4x125
4x250
3x500
10GHz
18GHz
GC122
DC TO 18GHZ RF AMPLIFIER MMIC
mmic distributed amplifier
RAYTHEON
high power fet amplifier schematic
wideband automatic gain control
S11510
dual-gate
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MA08506D
Abstract: No abstract text available
Text: MA08506D 8W Power Amplifier Die 9.5 - 10.5 GHz Advanced Information Features •= •= VDD VDD 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance •= Self-Aligned MSAG MESFET Process RF IN RF OUT VGG Functional Schematic Description Maximum Ratings (T
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MA08506D
MA08506D
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ATF54143.s2p
Abstract: 5988-2336EN transistor C610 5989-0034EN TOKO LL1608-FSR15 ATF-54143 ATF54143 atf54143 pHEMT AN-1222 BCV62C
Text: A 100 MHz to 500 MHz Low Noise Feedback Amplifier using ATF-54143 Application Note 5057 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide GaAs devices, MESFET and pHEMT. Power amplifiers based on GaAs can achieve high efficiency
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ATF-54143
MTT-28,
ATF-54143
5989-0852EN
ATF54143.s2p
5988-2336EN
transistor C610
5989-0034EN
TOKO LL1608-FSR15
ATF54143
atf54143 pHEMT
AN-1222
BCV62C
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Untitled
Abstract: No abstract text available
Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- • GaAs MESFET Si Bi-CMOS
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RF5110
RF5110
800MHz
950MHz
-36dBm,
100kHz
DS110201
35dBm
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MESFET Application
Abstract: No abstract text available
Text: HMC637LP5 / 637LP5E v02.0709 Amplifiers - lineAr & power - smT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HmC637lp5 e wideband pA is ideal for: p1dB output power: +29 dBm • Telecom infrastructure Gain: 13 dB
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HMC637LP5
637LP5E
25mm2
MESFET Application
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Untitled
Abstract: No abstract text available
Text: HMC637LP5 / 637LP5E v02.0709 Amplifiers - Linear & Power - SMT 9 GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB
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HMC637LP5
637LP5E
25mm2
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MESFET Application
Abstract: No abstract text available
Text: HMC637LP5/637LP5E v03.1213 Amplifiers - SMT GaAs MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT
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HMC637LP5/637LP5E
HMC637LP5
25mm2
MESFET Application
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transistor C55 7B
Abstract: AT90USB1286-16MU SSL8000000 transistor C55 7c EPM570T100C5 SSL800 SSL8000000E18FAE C1005C0G1H101J C1005C0G1H151J MAX6126
Text: 19-4147; Rev 1; 9/08 MAX11014 Evaluation Kit The MAX11014 evaluation kit EV kit provides a proven design to evaluate the MAX11014 automatic RF MESFET amplifier drain-current controller using an Altera complex programmable logic device (CPLD) containing the
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MAX11014
2000/XP/Vista
MAX11014.
32-Bit
MAX11014
transistor C55 7B
AT90USB1286-16MU
SSL8000000
transistor C55 7c
EPM570T100C5
SSL800
SSL8000000E18FAE
C1005C0G1H101J
C1005C0G1H151J
MAX6126
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Untitled
Abstract: No abstract text available
Text: TAT8858A1H CATV Infrastructure Push-Pull Amplifier Applications • • • • CATV Line Amplifiers CATV System Amplifiers Distribution Nodes Green Applications SOIC-16 Wide Package Product Features Functional Block Diagram 75 Ω, 50-1000 MHz Bandwidth GaAs pHEMT & MESFET Technology
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TAT8858A1H
SOIC-16
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Untitled
Abstract: No abstract text available
Text: HMC637LP5/637LP5E v03.1213 AMPLIFIERS - SMT GAAS MESFET MMIC 1 WATT Power Amplifier, DC - 6 GHz Typical Applications Features The HMC637LP5 E wideband PA is ideal for: P1dB Output Power: +29 dBm • Telecom Infrastructure Gain: 13 dB • Microwave Radio & VSAT
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HMC637LP5/637LP5E
HMC637LP5
25mm2
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C1027
Abstract: transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018
Text: Application Note RFS1006-AN1 Application Note for RFS1006 Evaluation Board Power Sequencing The RFS1006 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF
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RFS1006-AN1
RFS1006
J1004
C1027
transistor c1027
c1027 transistor
C1032
C1007
tp1002
tp1006
TP1003
C1015 transistor
C1018
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900MHZ
Abstract: IPC-SM-782 RF6100-1
Text: RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V CDMA/AMPS Cellular Handset • Spread-Spectrum System • 3V CDMA20001/X Cellular Handset Product Description Optimum Technology Matching Applied 9 Si BJT GaAs HBT GaAs MESFET Si Bi-CMOS
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RF6100-1
900MHZ
CDMA20001/X
RF6100-1
203mm
330mm
025mm
IPC-SM-782
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ITT2110AH
Abstract: ITT2111AH ITT2112AH ITT211X ITTT2112AH
Text: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual
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ITT2110AH
ITT2111AH
ITT2112AH
ITT211X
ITT2112AH
ITT2110AH,
ITT2111AH)
ITTT2112AH
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Untitled
Abstract: No abstract text available
Text: 1 Ï X n l HEW LETT WLkM PAC KARD 6-20 GHz High-Gain Amplifier Technical Data HMMC-5620 Features Description The HMMC-5620 is a wideband GaAs MMIC Amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain,
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HMMC-5620
1410x1010
5965-5442E
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Untitled
Abstract: No abstract text available
Text: 3.5V 3.3W RF Power Amplifier 1C for GSM ITT2110AH / ITT2111 AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual
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ITT2110AH
ITT2111AH
ITT2112AH
ITT211X
ITT2112AH
ITT2110AH,
ITT2111
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