TQP200002
Abstract: TQP200002 ESD Protection Device
Text: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents
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TQP200002
TQP200002
voltages15
TQP200002 ESD Protection Device
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TQP200002
Abstract: TQP200002 ESD Protection Device
Text: TQP200002 Advanced Data Sheet ESD Protection device Applications: Description: The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bidirectional protection with very low leakage currents
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TQP200002
TQP200002
voltages15
TQP200002 ESD Protection Device
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IR0208
Abstract: IR0218LC1 ir020 IR0204LC2 IR0812LC2
Text: IMAGE REJECTION MIXERS AND I/Q DEMODULATORS IR IF HYBRID VCC IR IR Image Rejection MODEL NUMBER IRF MESFET Image Rejection FREQUENCY RANGE IF RF AND LO GHz (GHz) (Note 1) NOMINAL LO POWER (dBm) (Note 2) IRB Biasable Image Rejection CONVERSION LOSS (dB) (Max.)
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IR0502LC1
IR0102LC1
IR0325HA1
IR0104LC1
IR0204LC2
IR0208LC2
IR0408LC2
IR0708LI3Q
IR0812LC2
IR0118LC1
IR0208
IR0218LC1
ir020
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VP12* texas
Abstract: STD960 TGA1342-EPU VP12 VP22 Reliability VP12 3378M
Text: Advance Product Information 2 -20 GHz Wideband AGC Amplifier TGA1342-EPU September 13, 2001 Key Features and Performance • • • • • • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA
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TGA1342-EPU
378mm
032mm
0007-inch
VP12* texas
STD960
TGA1342-EPU
VP12
VP22
Reliability VP12
3378M
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Untitled
Abstract: No abstract text available
Text: Advance Product Information 2 -20 GHz Wideband AGC Amplifier TGA1342-EPU September 13, 2001 Key Features and Performance • • • • • • 0.5 um MESFET Technology 9 dB Nominal Gain 3.5 dB NF Typical Midband 17.5 dBm Nominal Pout @ P1dB Bias 5-8V @ 60 mA
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TGA1342-EPU
378mm
032mm
20Thermosonic
0007-inch
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mesfet lnb
Abstract: NE722S01 NE722S01-T1 NE722S01-T1B1
Text: C TO X BAND N-CHANNEL GaAs MESFET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB comprehension): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN:
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NE722S01
NE722S01
24-Hour
mesfet lnb
NE722S01-T1
NE722S01-T1B1
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mesfet lnb
Abstract: NE72118 NE72118-T1 NE72118-T2 13000 transistor
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 µm (recessed gate) 2.1 ± 0.2 • GATE WIDTH: Wg = 330 µm
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NE72118
NE72118
24-Hour
mesfet lnb
NE72118-T1
NE72118-T2
13000 transistor
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transistor mesfet
Abstract: mesfet lnb NE72118 NE72118-T1 NE72118-T2 lnb schematic 12-GHz
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm (1.3) 0.3 -0.05 +0.1 +0.1 4 1 PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain 0 to 0.1 NEC's stringent quality assurance and test procedures ensure
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NE72118
OT-343)
NE72118
4e-12
21e-12
1e-10
65e-12
046e-12
24-Hour
transistor mesfet
mesfet lnb
NE72118-T1
NE72118-T2
lnb schematic
12-GHz
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TGF1350
Abstract: No abstract text available
Text: Product Data Sheet May 17, 2001 Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability
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TGF1350-SCC
TGF1350-SCC
0007-inch
TGF1350
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ATF-35176
Abstract: ina10386 lnb downconverter schematic diagram ATF-35576 ATF35176 INA-10386 AN-A008 micro-X ceramic Package lna fet ATF13036 LNB down converter for Ku band
Text: Direct Broadcast Satellite Systems Application Note A009 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the
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AN1091,
ATF-36163
5965-1235E.
AN1136,
5966-2488E.
AN1139,
INA-51063
5091-8819E
5968-3629E
ATF-35176
ina10386
lnb downconverter schematic diagram
ATF-35576
ATF35176
INA-10386
AN-A008
micro-X ceramic Package lna fet
ATF13036
LNB down converter for Ku band
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FMCW Radar
Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.
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3800-Pirituba
E-28760
DK-2750
FMCW Radar
radar 77 ghz sige
radar 77 ghz receiver
mesfet lnb
FETs working 60Ghz
infineon FMCW
77 ghz FMCW
radar gunn diode
Gunn Diode
GaAs Gunn Diode "94 GHz"
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TQP200002 ESD Protection Device
Abstract: No abstract text available
Text: TQP200002 ESD Protection Device Applications • Cellular Handsets Cordless Phone LNBs CATV set top boxes Product Features Functional Block Diagram Snap-Back ESD protection Low clamp voltages 15 or 30 V Low trigger voltages 18, 25, or 41 V
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TQP200002
TQP200002
TQP200002-PCB-75
TQP200002-PCB-50
11Disclaimer:
TQP200002 ESD Protection Device
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IR0104
Abstract: IR0208
Text: IMAGE REJECTION PRODUCTS This detailed image rejection mixer catalog summarizes the important input, output and transfer characteristics of these devices. A short-form catalog is also available, upon request, that describes three other special mixer product groups: double-sideband mixer
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IRE0618
IRO218
IR0104
IR0208
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mixer lnb
Abstract: 26 GHz mixer AR34B09D
Text: MILLIMETER-WAVE PRODUCTS This detailed millimeter-wave mixer product catalog summarizes the important input, output and transfer characteristics of these devices. A short-form catalog is also available upon request, that describes three other special mixer product groups: doublesideband mixer products, single-sideband modulator products, and image rejection products. The short-form catalog is also
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SRD0218LW4
mixer lnb
26 GHz mixer
AR34B09D
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C10535E
Abstract: VP15-00-3 mesfet lnb IC 16pin log amplifier
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG181GR GaAs MMIC DBS Twin IF Switch DESCRIPTION The µPG181GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required.
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PG181GR
PG181GR
16-pin
C10535E
VP15-00-3
mesfet lnb
IC 16pin log amplifier
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS’ 0.5 pm GaAs MESFET
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pp472-476
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IR022
Abstract: IR0618LC2
Text: IM AGE REJECTION M IX E R S A N D l / Q DEMODULATORS SECTION 2 IR Image Rejection MODEi NUMBER FREQUENCY RANGE IE HF AND LO i GHzi GHz Noie 1 IRF MESFET Image Rejection NOMINAL LO POWER KIBril iNnie ? IRB Biasable Image Rejection CONVERSION LOSS itBi i Max
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tR9312tC2
IR1218LC2
IR1826LC3
IR2640LC2
IR022
IR0618LC2
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SG 2368
Abstract: sg 2534 DELTA 0431 180/TTK SG 2368
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 • GATE WIDTH: Wg = 330 jim • 4 PINS SUPER MINI MOLD
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NE72118
NE72118
24-Hour
SG 2368
sg 2534
DELTA 0431
180/TTK SG 2368
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817 CN
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz PACKAGE OUTLINE 18 ± 0.2 GATE LENGTH: Lg = 0.8 \im (recessed gate 2.1 GATE WIDTH: Wg = 330 \im
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NE72118
NE72118
36e-10
24-Hour
817 CN
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k 1117 3k
Abstract: 317MAG
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: PACKAGE OUTLINE 18 Gs = 5.5 dB T Y P a t f = 12 GHz LOW PHASE NOISE: 2.1 ± 0.2 -110 dBc/Hz TYP at 100 KHz off set at f = 11 GHz
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NE72118
OT-343)
E72118
1e-14
4e-12
1e-10
65e-12
046e-12
36e-10
k 1117 3k
317MAG
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raytheon dbs
Abstract: RMM9060-53
Text: Raytheon Electronics \ h - 950-2150 MHz GaAsMMIC DBS Twin IFSwitch Amplifier The Raytheon RMM9060-53 is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) downconverter for systems where at least two LNB outputs are required. It offers two
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RMM9060-53
raytheon dbs
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ GaAs INTEGRATED CIRCUIT ¿XPG181GR GaAs MMIC DBS Twin IF Switch DESCRIPTION The ^¡PG181GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required.
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XPG181GR
PG181GR
16-pin
C10535E)
14268E
0DS00
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DIELECTRIC COAXIAL RESONATOR
Abstract: MMIC Downconverter ku band AKD2400 design dielectric resonator oscillator AKD2705
Text: APPLICATION NOTE - AKD SERIES DOWNCONVERTERS AKD Series KU-Band GaAs MMIC Downconverters Surface Mount Devices Rev 7 Introduction The AKD Series of downconverters is intended for use in the outdoor LNB portion of DBS (Direct Broadcast Satellite) systems. These MMIC downconverters are fabricated using the ANADIGICS' 0.5
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pp472-476
DIELECTRIC COAXIAL RESONATOR
MMIC Downconverter ku band
AKD2400
design dielectric resonator oscillator
AKD2705
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Mixers
Abstract: SME0104LC1B IRF67 SSB Modulator Direction Finding
Text: TABLE OF CONTENTS M O D E L PREFIX UNI QUE E X A M P L E PAGE NO. Single-, double- and triple balanced mixers for double sideband, up/down conversion, demodulation DB, DM, FDM, SBB, SBE, SBW, TB, TBR.TIM Model: TB0440LW1 Triple balanced LO/RF: 4 to 40 GHz
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TB0440LW1
DSS0818
DBF1800W3
IRF0612H
ARE3436LC1
SDM0708LI3Q
SME0104LC1B
Mixers
IRF67
SSB Modulator
Direction Finding
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