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    METAL RECTIFIER DIODE Search Results

    METAL RECTIFIER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CRG09A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG10A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CMG03A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CRG04A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT Visit Toshiba Electronic Devices & Storage Corporation
    CMG06A
    		Toshiba Electronic Devices & Storage Corporation General-purpose diode, 600 V, 1 A , Rectifier Diode, M-FLAT Visit Toshiba Electronic Devices & Storage Corporation

    METAL RECTIFIER DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MBRB1045T4G

    Contextual Info: MBRB1045 Preferred Device SWITCHMODEt Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB1045 MBRB1045/D MBRB1045T4G PDF

    NTE6085

    Abstract: Schottky diode TO220 15A 1000V
    Contextual Info: NTE6085 Silicon Dual Schottky Rectifier Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Plastic Package D Metal to Silicon Rectifier, Majority Carrier Conduction


    Original     		NTE6085 NTE6085 Schottky diode TO220 15A 1000V PDF

    B2060g

    Abstract: b2060 221D-03 221D MBRF2060CT MBRF2060CTG b2060 aka SCHOTTKY BARRIER RECTIFIER aka *B2060G
    Contextual Info: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF2060CT MBRF2060CT/D B2060g b2060 221D-03 221D MBRF2060CT MBRF2060CTG b2060 aka SCHOTTKY BARRIER RECTIFIER aka *B2060G PDF

    MBRB1045

    Abstract: MBRB1045T4 SMD310
    Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB1045 O-220 r14525 MBRB1045/D MBRB1045 MBRB1045T4 SMD310 PDF

    MBRB1045

    Abstract: MBRB1045T4 418B SMD310
    Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB1045 O-220r MBRB1045/D MBRB1045 MBRB1045T4 418B SMD310 PDF

    B2535LG

    Abstract: aka B2535LG PPAP MANUAL for automotive industry NRVBB2535CTLG MBRB2535CTLG
    Contextual Info: MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB2535CTLG, NRVBB2535CTLG MBRB2535CTL/D B2535LG aka B2535LG PPAP MANUAL for automotive industry NRVBB2535CTLG MBRB2535CTLG PDF

    B2535L diode

    Abstract: b2535l
    Contextual Info: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB2535CTL MBRB2535CTL/D B2535L diode b2535l PDF

    aka B2535LG

    Abstract: NRVBB2535CTLG
    Contextual Info: MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB2535CTLG, NRVBB2535CTLG MBRB2535CTL/D aka B2535LG NRVBB2535CTLG PDF

    b2535l

    Abstract: B2535 B2535L diode
    Contextual Info: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB2535CTL b2535l B2535 B2535L diode PDF

    b2535lg

    Abstract: aka B2535LG b2535 B2535L B2535L diode MBRB2535CTL MBRB2535CTLG MBRB2535CTLT4 MBRB2535CTLT4G 2CW28
    Contextual Info: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB2535CTL MBRB2535CTL/D b2535lg aka B2535LG b2535 B2535L B2535L diode MBRB2535CTL MBRB2535CTLG MBRB2535CTLT4 MBRB2535CTLT4G 2CW28 PDF

    B2060G

    Contextual Info: MBRF2060CT SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF2060CT MBRF2060CT/D B2060G PDF

    D2PAK marking 30

    Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB1045 D2PAK marking 30 PDF

    B20100G

    Abstract: B20100G diode AKA B20100 B20100G AKA B20100G on aka AKA B20100G B20100G diode AKA B20100 AKA B20100G to220 b20100
    Contextual Info: MBRF20100CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF20100CT MBRF20100CT/D B20100G B20100G diode AKA B20100 B20100G AKA B20100G on aka AKA B20100G B20100G diode AKA B20100 AKA B20100G to220 b20100 PDF

    MBRF1545CT

    Contextual Info: MBRF1545CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF1545CT MBRF1545CT/D MBRF1545CT PDF

    B20200G

    Abstract: B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor
    Contextual Info: MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF20200CT MBRF20200CT/D B20200G B20200G AKA b20200 SCHOTTKY BARRIER RECTIFIER aka 221D MBRF20200CTG 1505C MBRF20200CT B2020 RECTIFIER DIODES ON Semiconductor PDF

    B2060g

    Abstract: B2060 b2060 aka SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2060CT MBRF2060CTG 221D *B2060G
    Contextual Info: MBRF2060CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF2060CT MBRF2060CT/D B2060g B2060 b2060 aka SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2060CT MBRF2060CTG 221D *B2060G PDF

    B2515LG

    Contextual Info: MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB2515L MBRB2515L/D B2515LG PDF

    B2515LG

    Abstract: B2515L B2515L AKA B2515 MBRB2515L MBRB2515LG MBRB2515LT4 MBRB2515LT4G
    Contextual Info: MBRB2515L Preferred Device SWITCHMODEt Power Rectifier ORing Function Diode D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal


    Original     		MBRB2515L MBRB2515L/D B2515LG B2515L B2515L AKA B2515 MBRB2515L MBRB2515LG MBRB2515LT4 MBRB2515LT4G PDF

    Schottky diode TO220 15A 1000V

    Abstract: NTE6085 "Dual Schottky Rectifier" transistor working principle Schottky diode TO220
    Contextual Info: NTE6085 Silicon Dual Schottky Rectifier 45V, 15 Amp, TO220 Description: The NTE6085 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Plastic Package D Metal to Silicon Rectifier, Majority Carrier Conduction


    Original     		NTE6085 NTE6085 Schottky diode TO220 15A 1000V "Dual Schottky Rectifier" transistor working principle Schottky diode TO220 PDF

    b20100

    Abstract: B20100 diode MBRF20100CT
    Contextual Info: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF20100CT AN1040. b20100 B20100 diode MBRF20100CT PDF

    b2545g

    Abstract: B2545 AKA b2545 b2545G AKA B2545G diode B2545g SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2545CTG b2545 transistor manual MBRF2545CT
    Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF2545CT MBRF2545CT/D b2545g B2545 AKA b2545 b2545G AKA B2545G diode B2545g SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2545CTG b2545 transistor manual MBRF2545CT PDF

    b2545

    Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF2545CT AN1040. b2545 PDF

    b2545g

    Abstract: B2545G diode b2545g aka B2545 AKA B2545g SCHOTTKY BARRIER RECTIFIER aka
    Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF2545CT MBRF2545CT/D b2545g B2545G diode b2545g aka B2545 AKA B2545g SCHOTTKY BARRIER RECTIFIER aka PDF

    B20200

    Abstract: B20200 on
    Contextual Info: MBRF20200CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		MBRF20200CT AN1040. B20200 B20200 on PDF