METALLIZATION Search Results

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

LT3973-3.3

Abstract: CDR01-CDR06 C1206 KEMET packaging PEF55801VV1.3 CDR05BX823BKW CDR31-CDR35 MIL-PRF-55681 kemet 31G-4 CDR02 LT1432-3.3
Contextual Info: CERAMIC CHIP/MIL-PRF-55681 KEMET CAPACITOR OUTLINE DRAWINGS CHIP DIMENSIONS “SOLDERGUARD I” * SOLDER L W “SOLDERGUARD II” T TINNED BW NICKEL ELECTRODES SILVER METALLIZATION NICKEL ELECTRODES Military Designation - “S” or “U” KEMET Designation - “H”

55CU

Contextual Info: 0105 - 12 12 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz GENERAL DESCRIPTION CASE OUTLINE The 0105-12 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

MIL-PRF-55681

Abstract: C180 cdr01 capacitors kemet capacitor c1206 CDR02 CDR03 CDR31 CDR32 CDR33 CDR01-CDR06
Contextual Info: CERAMIC CHIP/MIL-PRF-55681 CAPACITOR OUTLINE DRAWINGS CHIP DIMENSIONS “SOLDERGUARD I” * SOLDER L W “SOLDERGUARD II” T TINNED BW NICKEL ELECTRODES SILVER METALLIZATION NICKEL ELECTRODES Military Designation - “S” or “U” KEMET Designation - “H”

rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

MS2205

Contextual Info: MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL M220 Epoxy Sealed DESCRIPTION:

88-108 mhz w power

Abstract: 88-108 an power 88-108 mhz 55ht fm emitter 88-108 mhz Power w 88-108mhz fm transistor
Contextual Info: FM 150 150 Watts, 28 Volts Broadcast 88 - 108 MHz GENERAL DESCRIPTION The FM 150 is a high power COMMON EMITTER bipolar transistor. It is designed for FM systems in the frequency band 88-108 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

TAN15

Contextual Info: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor

SD2941-10

Abstract: EE-19 transformer SD2931-10 VK200
Contextual Info: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower

1035 transistor

Abstract: M.P transistor
Contextual Info: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

G200

Abstract: f 0952
Contextual Info: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

55ay

Abstract: DME150
Contextual Info: DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven

1N3891 equivalent

Abstract: 12v diode 10A
Contextual Info: -Jolìtrm i Devices. Inc. [^ @QJJ©T ©ATTM, ' MEDIUM TO HIGH VOLTAGE CHIP N UM BER PINI EPITAXIAL PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:

Di 762 transistor

Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System

Contextual Info: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)

2N4307

Contextual Info: C o n t ra n Devices. Inc LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:

Contextual Info: -Æ tttran MEDIUM VOLTAGE, FAST RECOVERY Devices. Inc. CHIP NUMBER PIM EPITAXIAL FAST RECOVERY PLANAR POWER DIODE dfì CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold Polished silicon or "Chrom e Nickel Silver" also available Mso available on:

NPN Transistor 50A 400V

Abstract: 1200PF
Contextual Info: C o n tr a n Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver” also available Also available on:

SDT13301-SDT13305

Contextual Info: C ^ isnuxmr ©ättail o n tra n Devices. Inc VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER _ IMPIM TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION B a se and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrom e Nickel Silver” also availab le

1N3902

Contextual Info: ^ ©mKSTT ©ÄTTÄtL© =Æutnm MEDIUM TO HIGH VOLTAGE Devices. Inc. CHIP NUMBER PIM EPITAXIAL PLANAR POW ER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold Polished silicon or "Chrom e Nickel Silver" also available Also availab le on:

Transistors high frequency Bipolar NPN

Contextual Info: Temic S e m i <; <> n ! u c t o r s Features Benefits • Full range of matrices up to 1000 com ponents The Series A arrays are excellently suitable for the • Single-level metallization, second level possible production o f c u s to m e r specific integrated circuits

Contextual Info: Contran Ä ¥Ä 1L© M E D IU M VOLTAGE, FAST SW ITCHING, HIGH GAIN Devices. Inc MONOLITHIC N P N EPITAXIAL PLANAR POWER DARLINGTON TR A N S IS TO R * (FORMERLY 0 3 ] CHIP NUMBER c -n CONTACT METALLIZATION B a se and emitter: > 30,000 A Aluminum Collector: Gold

2N6261

Contextual Info: -Jiolitron [ ^ » © T ©ATTM.©' Devices. Inc MEDIUM VOLTAGE CH IP N UM BER NPN SINGLE DIFFUSED MESA TRANSISTOR FORMERLY 06 CONTACT METALLIZATION B ase, Emitter a n d Collector Solder C o ated 95/5% le ad /tin . ASSEMBLY RECOMMENDATIONS It is ad v isa b le that:

Contextual Info: K J iä \ß t U l i Semiconductors Intermittent- and Wipe/Wash Control for Wiper Systems Description With the U264xB, TEMIC Semiconductors developed a generate ”x” versions using different metallization family of intermittent- and wipe/wash control circuits for masks. Thus, it is easy to verify a broad range of time sewindshield or backlite wiper systems with identical basic quences which can be set independently of each other,