MEV SMD DIODE Search Results

IN50C

Abstract: QML-38534 IN50B Dosimeter radiation space MARKING CODE smd R05
Contextual Info: April 29, 2013 Radiation Performance Data Package RHD5900, RHD5901, RHD5902 Rev 2.0 DLA SMD Number: 5962-10241 Quad operational amplifiers Radiation Hardened by Design ELDRS: CMOS Immune Total dose: > 1 Mrad Si SEL Immune >100 MeV-cm /mg Neutron Displacement Damage

Contextual Info: Standard Products RAD7214-NNJx Power MOSFET Die Preliminary Data Sheet July 2014 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  250Vbreakdown voltage  2.5 A current rating  1.2RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are

Contextual Info: Standard Products RAD7230-NNJx Power MOSFET in SMD 0.5 Package Datasheet August, 2012 www.aeroflex.com/MOSFETS FEATURES INTRODUCTION  200Vbreakdown voltage  12 A current rating  0.22RDS on Aeroflex RAD's new radiation tolerant power MOSFETs are

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add electrostatic discharge human body model limit under paragraph 1.3. - ro 10-02-12 C. SAFFLE B Make changes to footnote 6/ under paragraph 1.5 and footnote 3/ under Table IA. Add a paragraph under paragraph 1.5. - ro

RAD SMD MARKING CODE

Abstract: smd diode marking code TO3
Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

2N7545U3

Abstract: 2n7545 2N7546 2N7546u3 2N7547T3 2N7548 2N7548T3 712c MIL-PRF-19500/2N7546U3 2N7547
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 January 2011. MIL-PRF-19500/712C 27 October 2010 SUPERSEDING MIL-PRF-19500/712B 25 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

5962F0052301V9A

Abstract: IS1009RH IS2-1009RH-Q CAN-3 IS2-1009RH-8 IS2-1009RH-Q 5962-00523
Contextual Info: IS-1009RH 2.5V Reference Page 1 of 2 IS-1009RH Printer Friendly Version 2.5V Reference Datasheets, Related Docs & Simulations Description Key Features Parametric Data Application Diagrams Related Devices Ordering Information iBuy direct from Intersil iBuy direct - out of stock

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications

2N7520

Abstract: 2N7520U3 2N7519u3 2N7520T3 IRHNJC597034 2N7519T3 2N7519 IRHNJ597Z30 IRHNJ597034 smd transistor marking BL
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 July 2010. INCH-POUND MIL-PRF-19500/732B 23 April 2010 SUPERSEDING MIL-PRF-19500/732A 9 May 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

9375.1B

Abstract: 93751b IRHNJ53Z30 IRHNJ54Z30 IRHNJ57Z30 IRHNJ58Z30
Contextual Info: PD - 93751B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) RDS(on) 0.020Ω ID 22A* IRHNJ53Z30 300K Rads (Si) 0.020Ω 22A* IRHNJ54Z30

IRHNJ597230

Abstract: IRHNJ598230 IRHNJ593230
Contextual Info: PD - 94046A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A IRHNJ594230 600K Rads (Si)

IRHNJ53130

Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130
Contextual Info: PD - 93754C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130

smd transistor L33

Abstract: smd transistor ab2 L33 SMD w32 smd transistor 143 ah5 SMD SMD l33 Transistor a33 smd diode w32 smd diode w32 smd transistor smd diode E15
Contextual Info: QPro Virtex 2.5V Radiation Hardened FPGAs R DS028 v1.2 November 5, 2001 2 Preliminary Product Specification Features • 0.22 µm 5-layer epitaxial process • QML certified • Radiation hardened FPGAs for space and satellite applications • Guaranteed total ionizing dose to 100K Rad(si)

IRHNJ53130

Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130
Contextual Info: PD - 93754D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130

IRHNJ53230

Abstract: IRHNJ54230 IRHNJ57230 IRHNJ58230
Contextual Info: PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si)

300K-1000KRads

Abstract: IRHNJ597230 IRHNJ
Contextual Info: PD - 94046 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A IRHNJ594230 600K Rads (Si)

IRHNJ593130

Abstract: IRHNJ597130 IRHNJ598130 300K-1000KRads
Contextual Info: PD - 94047 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A IRHNJ594130 600K Rads (Si)

IRHNJ53130

Abstract: IRHNJ54130 IRHNJ57130 IRHNJ58130 93754B
Contextual Info: PD - 93754B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130

IRHNJ54130

Abstract: JANSR2N7481U3 IRHNJ53130 IRHNJ57130 IRHNJ58130 JANSF2N7481U3 mev smd diode
Contextual Info: PD - 93754F IRHNJ57130 JANSR2N7481U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 TECHNOLOGY 5 Product Summary ™ Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130

JANSR2N7481U3

Contextual Info: PD-93754G IRHNJ57130 JANSR2N7481U3 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 REF: MIL-PRF-19500/703 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) IRHNJ54130 500K Rads (Si)

mosfet motor dc 48v

Abstract: IRHNJ54034 IRHNJ57034 IRHNJ58034 IRHNJ53034
Contextual Info: PD - 93752A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034

IRHNJ57Z30

Abstract: IRHNJ53Z30 IRHNJ54Z30 IRHNJ58Z30 el 803 s
Contextual Info: PD - 93751A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 300K Rads (Si) RDS(on) 0.020Ω 0.020Ω ID 22A* 22A* IRHNJ54Z30