MEVC Search Results

Contextual Info: SAF27N20-080L SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4994, REV. - RAD TOLERANT LOW RDS HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 200 Volt, 0.08 Ohm, 27A MOSFET • Characterized at VGS of 6V • Total Dose Characterized to 300 Krad • Useful Performance for Single Event Effect up to 90 MeVcm2/mg LET

Contextual Info: SHF55N10-014 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4992, REV. - RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 100 Volt, 0.014 Ohm, 90A MOSFET current limited to 55A by package • Total Dose Characterized to 300 Krad • Useful Performance for Single Event Effect up to 80 MeVcm2/mg LET

Contextual Info: SGF20N06-008L SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4986, REV. - RAD TOLERANT LOW RDS HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 60 Volt, 0.008 Ohm, 20A MOSFET • Total Dose Characterized to 300 Krad • Useful Performance for Single Event Effect up to 80 MeVcm2/mg LET

Contextual Info: SAF20N06-008L SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4985, REV. - RAD TOLERANT LOW RDS HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 60 Volt, 0.008 Ohm, 20A MOSFET • Characterized at VGS of 4.5V • Total Dose Characterized to 300 Krad • Useful Performance for Single Event Effect up to 80 MeVcm2/mg LET

Contextual Info: Revision 16 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)

ADC12D1600CCMLS

Abstract: NAA0376A ADC12D1600CCMPR ADC12D1600QML AN213 N-05
Contextual Info: ADC12D1600QML www.ti.com SNAS615 – DECMEBER 2012 12-Bit, Single or Dual, 3200/1600/800 MSPS RF Sampling ADC FEATURES 1 • • 2 • • • • • • • • • • Total Ionizing Dose TID to 300 krad(Si) Single Event Latch-up (SEL) > 120 MeVcm2/mg

RTAX2000

Abstract: RTAX2000S RTAX1000SL rtax250 RTAX250SL RTAX4000SL RTAX1000 RTAX-S RTAX1000S-SL rtax250s
Contextual Info: Rev ision 13 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)

RTSX32SU CQ84 PROTO

Abstract: RTSX32SU CQ84 RTSX72SU1 SOC 8A fuse smd RTSX32su CG624 thermal expansion
Contextual Info: Revision 9 RTSX-SU Radiation-Tolerant FPGAs UMC Designed for Space • SEU-Hardened Registers Eliminate the Need to Implement Triple-Module Redundancy (TMR) – Immune to Single Event Upsets (SEU) to LETth > 40 MeVcm2/mg, – SEU Rate < 10–10 Upset/Bit-Day in Worst-Case

ADC12D1600QML

Contextual Info: ADC12D1600QML www.ti.com SNAS615 – DECMEBER 2012 12-Bit, Single or Dual, 3200/1600/800 MSPS RF Sampling ADC FEATURES 1 • • 2 • • • • • • • • • • Total Ionizing Dose TID to 300 krad(Si) Single Event Latch-up (SEL) > 120 MeVcm2/mg

w32 smd transistor

Abstract: rtax250sl RTAX2000S w32 smd transistor 143 41-bit Carry Look-ahead Adder RTAX2000SL RTAX4000S BY415 RTAX4000D LG1152
Contextual Info: Revision 14 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)

RTAX2000D

Abstract: LG1152 CDB 455 C34
Contextual Info: Revision 14 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)

624 CCGA

Abstract: CQ352 transistor prc 606 j rtax250 RTAX2000 rtax4000
Contextual Info: Revision 14 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)

RTAX250

Abstract: RTAX4000DL RTAX4000D CG624 RTAX4000S LG1152 TRANSISTOR TB 772 SL RTAX2000S ACTEL CCGA 624 mechanical transistor prc 606 j
Contextual Info: Revision 15 RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs Radiation Performance Specifications • SEU-Hardened Registers Eliminate the Need for Triple-Module Redundancy TMR – Immune to Single-Event Upsets (SEU) to LETTH > 37 MeVcm2/mg – SEU Rate < 10-10 Errors/Bit-Day (worst case GEO)

RTSX32SU CQ84 PROTO

Abstract: CQ84 SOC 8A fuse smd RTSX32SU CQ84 rtsx72su RTSX32SU CG624 thermal expansion
Contextual Info: Revision 8 RTSX-SU Radiation-Tolerant FPGAs UMC Designed for Space • SEU-Hardened Registers Eliminate the Need to Implement Triple-Module Redundancy (TMR) – Immune to Single Event Upsets (SEU) to LETth > 40 MeVcm2/mg, – SEU Rate < 10–10 Upset/Bit-Day in Worst-Case

ADC12D1600QML

Contextual Info: ADC12D1600QML www.ti.com SNAS615 – DECMEBER 2012 12-Bit, Single or Dual, 3200/1600/800 MSPS RF Sampling ADC FEATURES 1 • • 2 • • • • • • • • • • Total Ionizing Dose TID to 300 krad(Si) Single Event Latch-up (SEL) > 120 MeVcm2/mg

Contextual Info: UT54 ACS 153/UT54ACTS153 Radiation-Hardened Quadruple 4 to 1 Multiplexers PINOUTS FEATURES • 16-Pin D IP Top View 1.2n radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QM L Q o r V processes Flexible package

Contextual Info: U T 5 4 A C S 151 / U T 5 4 A C T S 151 Radiation-Hardened 1 of 8 Data Selectors/Multiplexers PINOUTS FEATURES 16-Pin DIP Top View • 8-line to 1-line multiplexers can perform as -Boolean function generators, parallel-to-serial converters, and data source selectors

Contextual Info: UT54ACS541/UT54ACTS541 Radiation-Hardened Octal Buffers & Line Drivers, Three-State Outputs FEATURES • Three-state outputs drive bus lines or buffer memory address registers • l.2\i radiation-hardened CMOS - Latchup immune • High speed • Low power consumption

Contextual Info: a d v a n c e in fo r m a 7to/vUT54ACS 191/UT54ACTS191 Radiation-Hardened Synchronous 4-Bit Up-Down Counters FEATURES • Single dow n/up count control line • Look-ahead circuitry enhances speed of cascades counters • Fully synchronous in count inodes

Contextual Info: UT54ACS 139/UT54ACTS 139 Radiation-Hardened Dual 2-Line to 4-Line Decoders/Demultiplexers PINOUTS FEATURES 16-Pin DIP Top View • Incorporates two enable inputs to simplify cascading and/or data reception • 1.2 1 radiation-hardened CMOS - Latchup immune

Contextual Info: UT54ACS 169/UT54ACTS 169 Radiation-Hardened 4-Bit Up-Down Binary Counters FEATURES • • • • • • • • • • Fully synchronous operation for counting and programming Internal look-ahead for fast counting Carry output for n-bit cascading Fully independent clock circuit

Contextual Info: UT54ACS193/UT54ACTS193 Radiation-Hardened Synchronous 4-Bit Up-Down Dual Clock Counters FEATURES • • • • • • • • • • PIN OUTS 16-Pin D IP Top View Look-ahead circuitry enhances cascaded counters Fully synchronous in count modes Parallel asynchronous load for modulo-N count lengths

54ACS

Abstract: LT26
Contextual Info: a d v a n c e in fo r m a t i o n \ J T 54ACS 193/UT54ACTS 193 Radiation-Hardened Synchronous 4-Bit Up-Down Counters FEATURES • • • • • • • • • • Look-ahead circuitry enhances cascaded counters Fully synchomous in count modes Parallel asynchronous load for modulo-N count lengths

Contextual Info: UT54ACS 169/UT54ACTS 169 Radiation-Hardened 4-Bit Up-Down Binary Counters FEATURES PIN O U T S • Fully synchronous o p eratio n for counting and pro­ gram m ing • Internal look-ahead for fast counting • Carry output for n-bit cascading • Fully independent clock circuit