MG DIODE Search Results

Contextual Info: SK60MH60 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET Z<BB Z¥BB T< T<@ O- L EF N$J 407,- %*8,23.-, -', .6.,+ O- L EF ;MG> N$^ Q>JE> *' _ Q &-^ O- L ;MG> N$^ Q> OP Inverse diode SEMITOP 4 MOSFET Module TD L X T< TD@ L X T<@ O- L EF ;MG> N$^

Contextual Info: HL6712G/MG AIGalnP LD Description The HL6712G/MG are 0.67 nm band AIGalnP index-guided laser diodes with a double heterostructure. They are suitable as light sources for barcode readers, levelers, laser printers, and various other types o f opti­ cal equipment.

Contextual Info: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller www.aeroflex.com/RadHard November 3, 2008 FEATURES ❑ Radiation hardness: - Total dose 1MRad Si - Single event latchup (SEL) immune to 100MeV-cm2 /mg - Single event upset (SEU) 20MeV-cm2 /mg

Contextual Info: HITACHI/ OPTOELECTRONICS 54E D • 44^205 0 0 1 2 03 7 3,20 ■ H I T M HL7836G/MG GaAIAs LD Description T The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light

S3500

Abstract: CYOPTICS laser SM15-PS-U40A-H cyoptics Cyoptics TO JESD625-A laser power control tunable laser etalon wavelength locker CYOPTICS laser 14 pin
Contextual Info: Data Sheet Manufactured by CyOptics S3500 Tunable Laser Module Description Features The S3500 is a tunable laser module based on Syntune’s modulated grating Y-branch MG -Y laser design. The MG -Y laser is a monolithic device, similar to a common Distributed Bragg

PWM5032

Contextual Info: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 26, 2012 FEATURES ❑ Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg

PWM5032

Abstract: PWM5032-001-2S PWM5032-S PWM5032-001-1S pmw5032 16PF PWM5031
Contextual Info: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM April 22, 2010 FEATURES ❑ Radiation performance - Total dose 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg

ML-1 94V-0

Abstract: E-36952 TSE397C-333ML MIL-A-46106 str 6709 MIL-A-46146 str 6708 Mil-S-46163A semiconductors cross index semiconductors cross reference
Contextual Info: Why MG Chemicals? At MG Chemicals, we realize that our number one asset is you, our customer. ISO Quality Standards. Since 1955, M.G. Chemicals has provided the North American electronics industry with a full line of high performance chemicals and accessories. The M.G. Chemicals manufacturing facility operates

NIN18

Contextual Info: Standard Products PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM March 26, 2012 FEATURES ❑ Radiation performance - Total dose > 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg

PMW5032

Abstract: PWM5031 PWM5032 PWM5032-EVAL
Contextual Info: Standard Products PWM5031 / PWM5032 RadHard High Speed PWM Controller Radiation Tolerant www.aeroflex.com/PWM June 9, 2009 FEATURES ❑ Radiation performance - Total dose 1 Mrad Si , Dose rate = 50 - 300 rads(Si)/s - SEL: Immune to 100 MeV-cm2/mg - SEU: Immune up to 20 MeV-cm2/mg

hl7806g

Abstract: HL7806
Contextual Info: HITACHI / OP TOE LECTRONICS 54E ]> • 44*ibBDS 0 G 1 2 0 n HL7806G/MG IDS « H I T 4 GaAlAs LD * 7 ^ -* //- O S Description The HL7806G/MG are 0.78 (jm band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.

HL7836MG

Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
Contextual Info: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light

Contextual Info: MC74VHC1G66 SPST NO Normally Open Analog Switch MARKING DIAGRAMS 5 SC−88A DF SUFFIX CASE 419A High Speed: tPD = 20 ns (Typ) at VCC = 5.0 V V9 MG G 1 5 5 1 V9 MG G TSOP−5 DT SUFFIX CASE 483 Features • • • • • • • • http://onsemi.com M

Contextual Info: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E

PD 2028 b

Contextual Info: SELECTION GUIDE PA RI NO. SYSTEM INFRARED EM ITTI MG DIODES : PHOTODIODES : LAMP CATEGORYBRIGHT LED PRODUCT •PHOTOTRANSISTORS • PHOTOREFLECTORS : LIGHT BED-DDDDDï PACKAGE TYPE LAMP CATEGORY: IR: Infrared Emitting Diodes PT: Phototransistors PD: Photodiodes

Contextual Info: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case: QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg

BAV200

Abstract: BAV201 BAV202 BAV203
Contextual Info: BAV200 / 201 / 202 / 203 Switching Diode Features Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data Case:QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg Cathode Band Color: Black Absolute Maximum Ratings Parameter Test Condition

BAV200

Abstract: BAV200-GS08 BAV200-GS18 BAV201 BAV201-GS08 BAV202 BAV203 bav203-gs08
Contextual Info: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case: QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg

GSD2004W

Contextual Info: GSD2004W VISHAY Vishay Semiconductors High-Voltage Small-Signal Switching Diode \ Features • Silicon Epitaxial Planar Diode • Fast switching diode, especially suited for applications requiring high voltage capability Mechanical Data 17431 Weight: approx. 10 mg

Contextual Info: BAY135 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Planar Diode • Very low reverse current Applications Protection circuits, delay circuits Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options:

Contextual Info: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case:QuadroMELF Glass Case SOD-80 Weight: approx. 33.7 mg Cathode Band Color: Black Packaging Codes/Options:

Contextual Info: BA979/BA979S VISHAY Vishay Semiconductors RF PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 9612009 Mechanical Data Case:QuadroMELF Glass Case SOD-80 Weight: approx. 33.7 mg

Contextual Info: MMBD7000 VISHAY Vishay Semiconductors Dual Small Signal Switching Diode 3 Description Silicon Epitaxial Planar Diode Fast switching dual diode, especially suited for automatic insertion 1 2 18109 Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 8.0 mg

MMBD7000-GS08

Abstract: M5C marking
Contextual Info: MMBD7000 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Description 3 Silicon Epitaxial Planar Diode Fast switching dual diode, especially suited for automatic insertion 1 Mechanical Data 2 18109 Case: SOT-23 Plastic case Weight: approx. 8.8 mg