MG-250 TRANSFORMER Search Results

Contextual Info: Document 748 SMT Mini Wideband Transformer • 3 dB bandwidth: 0.1 MHz to 3.5 GHz • 1/4 Watt RF input power • 250 mA max current rating. Core material Ferrite Terminations RoHS compliant tin-silver-copper over silver-platinumglass frit. Weight 83.3 mg

Contextual Info: Document 512 SMT Gate Driver Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.

Contextual Info: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.

DA2319-AL

Abstract: DA2320-ALC hp 4192 DA2320
Contextual Info: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.

Contextual Info: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.

Contextual Info: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.

low Pressure Sodium Lamps circuit

Abstract: high Pressure mercury vapour Lamps circuit HGR15 NA34 GR101 Pb-RE-11 EEFL C9H13N fumarate induction lamp
Contextual Info: GR101-03I General Specification on Chemical Substances Ver.10.0 1. Objective NTT Electronics Corp. hereafter, NEL has established the”General Specifications on Chemical Substances” to clearly specify the requirements and to ensure the control of chemical substances specifications contained

DA2320-AL

Contextual Info: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance and excellent interwinding capacitance. Primary to secondary isolation is 1500 Vdc, and for DA2317-AL and

Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

EE ferrite core

Abstract: rod core ferrite ferrite rod cores core EE 20
Contextual Info: FERRITE C O R ES* These cores are designed for wire-winding. • ■ ■ ■ ■ ■ APPLICATIONS ■ ■ ■ Switching power supplies Choke coils Current transformers UA Core: U A 4 5 -U A 4 7 U-shaped Cores Pot Cores Multi-Hole Cores Rod Cores Drum Shaped Cores

DA2320

Abstract: DA2320-ALC DA2319-AL DA2320-AL DA2317-AL billion transformer SR-332 da2319
Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

zinc chloride

Abstract: DIDP 10th class 2012 fumarate induction lamp JIG-101 HCB CONNECTORS low Pressure Sodium Lamps circuit high Pressure Sodium Lamps circuit selen
Contextual Info: GR101-02I General Standard on Chemical Substances Management For suppliers Version.10.0 (November 26, 2010 Established) NTT Electronics Corporation Procurement Management Center Environmental and Quality Management Division GR101-02I Index 1. Introduction.

Contextual Info: Document 512 SMT Gate Drive Transformers •฀ Designed฀ for฀ high฀ switching฀ speed,฀ transformer฀ coupled฀ MOSFET and IGBT gate drive circuits. •฀ Operating฀frequency:฀50฀kHz฀–฀2฀MHz •฀ ฀

Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

Contextual Info: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.

702 H

Abstract: J993 EPA045-X bawa
Contextual Info: _Starlan Isolation Transformers EpA045-X ELEGTnONICSi INC. • Designed for Hub and Node Applications ■ Hipot 2000 Ynris ■ ■ ■ M eets the high-Reliability Specs of IEEE S02.3 Standard Type 1 Ease 5 ■ ■ Available in Single and Dual Low Profile Packages

Contextual Info: GATE DRIVE TRANSFORMERS Outgassing Compliant Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For 1011 and

JA4220-AL

Contextual Info: Document 748 SMT Mini Wideband Transformer • 3 dB bandwidth: 0.1 MHz to 3.5 GHz • 300 V interwinding isolation, 1/4 Watt RF input power • 250 mA max current rating. Core material Ferrite Terminations RoHS compliant tin-silver-copper over silver-platinumglass frit.

RF TRANSFORMER 2 UH

Contextual Info: Document 748 SMT Mini Wideband Transformer • 3 dB bandwidth: 0.1 MHz to 3.5 GHz • 300 V interwinding isolation, 1/4 Watt RF input power • 250 mA max current rating. Core material Ferrite Terminations RoHS compliant tin-silver-copper over silver-platinumglass frit.

PFD3215

Abstract: pfd3215 wideband
Contextual Info: Document 982W-1 Wideband Transformers – PFD3215 • Typical applications are as impedance or isolation transformer • Can be used for balanced to unbalanced balun conversion • 1/4 Watt input RF power rating • Low DCR values Insertion DCR Bandwidth

Contextual Info: Document 982W-1 Wideband Transformers – PFD3215 • Typical applications are as impedance or isolation transformer • Can be used for balanced to unbalanced balun conversion • 1/4 Watt input RF power rating • Low DCR values Insertion DCR Bandwidth