MG100Q Search Results

MG100Q2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:

BY575

Contextual Info: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage

MG100Q1ZS50

Contextual Info: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode

dc to dc chopper using igbt

Abstract: TOSHIBA IGBT DATA BOOK MG100Q1ZS40
Contextual Info: MG100Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.)

MG100Q1ZS40

Abstract: ED 05 Diode
Contextual Info: TO SHIBA MG100Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/*s Max. trr= 0.5/^s (Max.) • Low Saturation Voltage : v CE(sat) = 4 -o v (Max.)

transistor s51a

Contextual Info: MG100Q2YS51A T O SH IB A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E (s a t) = 3.6V (Max.)

MG100Q1ZS50

Abstract: 9416 Diode
Contextual Info: TOSHIBA MG100Q1ZS50 MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Induetive Load Low Saturation Voltage : VCE (sat) = 3-6 v (Max.)

Contextual Info: MG100Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS42 High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode

Contextual Info: MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2

Contextual Info: MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2

MG100Q2YS65H

Contextual Info: MG100Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG100Q2YS65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC

MG100Q1JS40

Contextual Info: MG100Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode

PJ-019 diode

Abstract: pj 59 diode
Contextual Info: T O SH IB A MG100Q1JS40 TOSHIBA GTR MODULE MG1QQ SILICON N CHANNEL IGBT n 1 K i n m m w r • w HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/üs (Max.) Low Saturation Voltage • V cE(sat) = 4*0V (Max.)

Contextual Info: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode

Contextual Info: MG100Q2YS42 Unit in inm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.5//s Max. trr = 0.5//s(Max.) Low Saturation Voltage : VcE(sat) = 4-0V (Max-) Enhancement-Mode Includes a Complete Half Bridge in One

Contextual Info: MG100Q2YS42 T O SH IB A MG100Q2YS42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4-FAST-on-Tab#110 \ • • • • • • High Input Impedance High Speed : tf=0.5/*s M ax. trr= 0.5(a s (Max.)

Contextual Info: TOSHIBA MG100Q1JS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG100Q1 JS40 M G 1 0 0 Q 1 JS 4 0 HIGH P O W E R SWITCHING APPLICATIONS U nit in mm CHO PPER APPLICATIONS. 2~JZ<5 6 ± 0 3 • High Input Impedance • High Speed : t f= 0 .5 ^ s (Max.)

Contextual Info: TOSHIBA MG100Q2YS51A MG1 0 0 Q 2 Y S 5 1 A TENTATIVE TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH PO W E R SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3,t<s Max. Inductive Load

Contextual Info: TOSHIBA MG1Q0Q2YS42 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG100Q2YS42 HIGH P O W E R SW IT C H IN G APPLICATIO N S. Unit in mm M O T O R C O N T R O L APPLIC ATIO N S. • High Input Impedance • High Speed : tf=0.5/;s Max. trr = 0.5//s (Max.)

Contextual Info: T O S H IB A MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 5 0 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf = 0.3 jus Max. @Inductive Load • Low Saturation Voltage

MG100Q2YS40

Contextual Info: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max)

igbt toshiba mg

Abstract: MG100Q2YS50A
Contextual Info: TO SH IBA MG100Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 i g / i u u u c u v e L /u au

MG100Q2YS40

Contextual Info: MG100Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 Unit: mm High Power Switching applications Motor Control Applications High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode