MG100Q1ZS50 Search Results
MG100Q1ZS50 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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MG100Q1ZS50 |
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TRANS IGBT MODULE N-CH 1200V 150A 5(2-95A6A) | Original | |||
MG100Q1ZS50 |
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Silicon N-channel IGBT GTR module for high power switching, motor control applications | Original | |||
MG100Q1ZS50 |
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GTR MODULE SILICON N CHANNEL IGBT | Scan |
MG100Q1ZS50 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MG100Q1ZS50Contextual Info: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode |
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MG100Q1ZS50 2-95A6A MG100Q1ZS50 | |
MG100Q1ZS50
Abstract: 9416 Diode
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OCR Scan |
MG100Q1ZS50 100Q1ZS50 2-95A6A MG100Q1ZS50 9416 Diode | |
Contextual Info: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode |
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MG100Q1ZS50 2-95A6A | |
Contextual Info: T O S H IB A MG100Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 1 00 Q 1 Z S 5 0 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf = 0.3 jus Max. @Inductive Load • Low Saturation Voltage |
OCR Scan |
MG100Q1ZS50 | |
Contextual Info: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max) |
Original |
MG100Q1ZS50 2-95A6A | |
MG100Q1ZS50Contextual Info: MG100Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode |
Original |
MG100Q1ZS50 2-95A6A MG100Q1ZS50 | |
GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
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MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X | |
2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
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SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn |