MG100Q2YS50 Search Results

BY575

Contextual Info: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage

igbt toshiba mg

Abstract: MG100Q2YS50A
Contextual Info: TO SH IBA MG100Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 i g / i u u u c u v e L /u au

Contextual Info: T O SH IB A MG100Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 00Q2YS50 HIGH POWER SWITCHING APPLICATIONS U nit in mm M O TOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= O .Z /u s Max. ( Inductive Load Low Saturation Voltage : VCE (sat) =3.6V (Max.)

Contextual Info: TO SH IBA MG100Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 i g / i u u u c u v e L /u au

igbt toshiba mg

Abstract: 100Q2YS50A 100Q2 100Q2YS50
Contextual Info: TOSHIBA MG 100Q2YS50A MG100Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS U nit in mm MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0.3^s Max. @Inductive Load Low Saturation Voltage

Contextual Info: TO SHIBA MG100Q2YS50A MG1 0 0 Q 2 Y S 5 0 A TENTATIVE T O SH IB A GTR M O D U LE SILICON N C H A N N EL IGBT Unit in mm HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S M O T O R CO N TRO L A PPLIC A TIO N S • • • • • • High Input Impedance High Speed : tf=0.3^s Max.

MG100Q2YS50

Contextual Info: TO SHIBA MG100Q2YS50 MG100Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)

MG100Q2YS50

Contextual Info: MG100Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive Load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode

Contextual Info: MG100Q2YS50A T O SH IB A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V CE (sat) = 3.6V (Max.)

MG100Q2YS50

Contextual Info: MG100Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max)

igbt toshiba mg

Abstract: MG100Q2YS50A
Contextual Info: TOSHIBA TENTATIVE MG100Q2YS50A MG 1 0 0 Q 2 Y S 5 0 A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage

TC58DVG14B1FT00

Abstract: TH58DVG24B1FT00 Ethernet-MAC ic TH58DVG TMP86P203P 721A SOP8 721A TMP86P202P 20-DIP pwm igbt
Contextual Info: ご注意 本資料に掲載されております製品※の一部に2004 年 10 月 1 日付けで三菱 電機株式会社へ譲渡された製品があります。詳しくは弊社営業窓口までお問 い合わせ下さい。 ※対象製品：大容量モジュール事業 自動車用途、高耐圧製品を除く

GT30J322

Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Contextual Info: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬

induction cooker fault finding diagrams

Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
Contextual Info: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when