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Mitsubishi Electric MGF0951P
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Bristol Electronics	MGF0951P		1,388			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MGF0951P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
MGF0951P		Mitsubishi			Scan	PDF	197.16KB	4

MGF0951P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGF0951P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P －－ Sample history:	Original	MGF0951P MGF0951P 25deg 61GHz -10MHz) 10MHz)	PDF
MGF0951P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P －－ Sample history:	Original	MGF0951P MGF0951P 35GHz 25deg	PDF
12W SMD Contextual Info: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm	Original	MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 12W SMD	PDF
Contextual Info: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm	Original	MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA	PDF
0951P Abstract: MGF0951P 60Ghz mitsubishi mgf Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm	Original	MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 0951P 60Ghz mitsubishi mgf	PDF
FET K 1358 Abstract: 951P MGF0951P Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> PRELIMINARY M G F0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm	OCR Scan	MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA FET K 1358 951P	PDF
MGF0951P Abstract: dsae001680 Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P －－ Sample history:	Original	MGF0951P MGF0951P 35GHz 25deg dsae001680	PDF
MGF0951P Abstract: rf id Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P －－ Sample history:	Original	MGF0951P 95GHz MGF0951P 25deg -900KHz) 900KHz) -600KHz) rf id	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm	Original	MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA	PDF
MGF0951P Abstract: RF0-30 C4-20P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P －－ Sample history:	Original	MGF0951P MGF0951P 25deg 1000pF 51ohm RF0-30 C4-20P	PDF
MGF0951P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P －－ Sample history:	Original	MGF0951P 95GHz MGF0951P 25deg -900KHz) 900KHz) -600KHz)	PDF
MGF0951P Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P －－ Sample history:	Original	MGF0951P 17GHz MGF0951P 14GHz 25deg	PDF
0951P Abstract: po 254 Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm	Original	MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA June/2004 0951P po 254	PDF
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1	PDF