MGFC39V3436 Search Results

MGFC39V3436

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic

GF-8

Abstract: MGFC39V3436
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched OUTLINE DRAWING GaAs power FET especially designed for use in 3.4 - 3.6 Unit : millimeters GHz band amplifiers. The hermetically sealed metal-ceramic

049 MAKING

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC39V3436

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: M ITSUBISHI SEM ICONDUCTO R <GaAs FET> MGFC39V3436 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 39V3436 is an internally im pedance-m atched O U T L IN E D R A W IN G G aAs pow er FET e specially designed fo r use in 3.4 - 3.6 U n it: millimeters

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety