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Abstract: No abstract text available
Text: MHT10P10HXV Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)28 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-65õ
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MHT10P10HXV
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Untitled
Abstract: No abstract text available
Text: MHT10P10 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)
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MHT10P10
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Abstract: No abstract text available
Text: MHT10P10HX Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)28 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)-65õ
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MHT10P10HX
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MHT10P10
Abstract: C63H q 1363
Text: M OTO ROLA SC 12E D X S TR S/R F MOTOROLA I b3b?254 GGflMEIG G | Order this data sheet by MHT10P10/D S E M IC O N D U C T O R TECHNICAL DATA Product Preview P o w e r Field E ffe c t T r a n s is t o r P-Channel Enhancem ent-Mode Silicon Gate T M O S T M O S PO W ER FET
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MHT10P10/D
T0-220
MK145BP,
MHT10P10
C63H1
MHT10P10
C63H
q 1363
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MHT10P10
Abstract: SM 8002 C NS 8002 1151
Text: MOTOROLA SC XSTRS/R F 4bE D fe.3t.7254 00*12474 b • MOTb MOTOROLA SEM IC O N D U C TO R i TECHNICAL DATA M H T10P10 Discrete Military Products Suffixes: HX, HXV P o w e r Field-Effect T ra n sisto r Processed per MIL-S-19500/547 P-Channel Enhancement-Mode
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T10P10
MIL-S-19500/547
O-116)
MHT10P10
SM 8002 C
NS 8002 1151
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