MI*420 DIODE Search Results

Contextual Info: SLR-322 Series K / Light Emitting Diodes SLR-322 Series ? > y * 3.1mm PCB Direct-Mountable, Reflection Small Lamps SLR-322 -> V - X I t , GaP ¡ fie 2.5mm M.-j 1 5 ThiS • Dimensions (U nit: mm) b /cg/M!! 7 > 7 T ‘t o 4 nw%3tfe, 2m<nu>x\.z& Mit sm m n zn ,

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86628 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview  Features  Built-in schottky barrier diode: VR = 15 V, IF = 700 mA

Contextual Info: Light Emitting Diodes LNP720321 Panel Display Units Full Color Type • Structure  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VCC – 0.3 to +5.25 V Operating supply voltage LED operating supply voltage di p Pl lan nclu ea e se pla m d m des

Contextual Info: T emic TSHA550. S e mi f o n d u i t ors GaAlAs Infrared Emitting Diodes in 05mm T-F/O Package Description The TSH A 550. series are high efficiency infrared em it­ ting diodes in G aA lA s on G aA lA s technology, m olded in a clear, untinted plastic package.

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 350 A 420 A 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) SKKT SKKT SKKH SKKH V drm dt)cr 350 A 420 A Itav (sin. 180, Tcase —. . .)

LZ-230 zener diode

Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
Contextual Info: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz

SLR-54-MG

Abstract: slr-54 SLR-54VR SLR54VR ITT ZF 18 3ALF SLR-54MC SLR54MG SLR54 SLR-54MG
Contextual Info: -f SLR-54 Series K / Light Emitting Diodes SLR-54 <j> 4.0 mm Series Reflecting Lamps S L R -5 4 v V - X l i , 4 m m < 7 )m yc& , v lV v ii^ a lo m i- ^ ^ ;£ ia / D im e n s io n s (Unit: mm) GaP £ 2 m m < n u > x (D s -f8 t r e m e ly e f f ic ie n t

ERN04-20

Abstract: ERN04 AA180
Contextual Info: E R N 4 4 o o a : Outline Drawings GENERAL-USE RECTIFIER DIODE J l : : Features • “h D iff u sed -j u n ctio n • iUJSEScttfllja Compression-contact type : A p p lic a tio n s • Si Buttery chargers Brush-less generators • ft* . Electric railway and chemical use rectifiers

2sk40

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK4029 Silicon N-channel MOSFET For switching circuits Unit: mm • Features  High-speed switching  Low ON resistance Ron  Incorporating a built-in gate protection-diode

Contextual Info: SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE "SuperBAT" ISSUE 2 - October 1997 I-| ZHCS750 O FEATURES: * Low VF * High Current Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL ZS7 ABSOLUTE M A X IM U M RATINGS.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 VRRM Forward current (Average)

Contextual Info: E S J C 0 4 5kv M JUN'Sii : Outline Drawings HIGH VOLTAGE SILICON DIODE E S JC 0 4 (i, E S J C 0 4 is high reliability and high current capability type resin molded high voltage silicon diode w hich is sealed a multilayed mesa type silicon chip by epoxy resin.

MH16

Abstract: MH17 MH18
Contextual Info: Bk MOSPEC MH16 thru MH18 Surface Mount High Efficiency Power Rectifiers HIGH EFFICIENCY RECTIFIERS Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

SLR 2 050 G

Contextual Info: SLR-56 Series -f# — F / Light Emitting Diodes SLR-56 J 5 # tJ f2 1 £ K -A :7 > y <f>5.0 mm Series Reflecting Low-Dome Lamps Dimensions (U n it: mm) S L R -5 6 i / ' J - X l t , ¡ t t I 5 m m £ t i le d mms. ±t 4'£, -To H 7 > 7 ? L/T, LTKHH4'^liAs''jZ'

Contextual Info: CCD Area Image Sensor MN3726FT,MN3726AT 6mm type-1/3 512H High-Resposivity CCD Area Image Sensors • Overview Part Number Size MN3726FT MN3726AT 6mm(type-1/3) ■ Features di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo

Contextual Info: CCD Area Image Sensor MN3728FT,MN3728AT 6mm type-1/3 768H CCD Area Image Sensor • Overview Part Number Size MN3728FT MN3728AT 6mm(type-1/3) ■ Features di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing

Diode LT 213

Abstract: semikron thyristor
Contextual Info: SEMIKRON V rsm V rrm 420 A SEMIPACK 3 Thyristor/ Diode Modules 250 A SKKT213 SKKT 253 dv/dt cr Itrms (m axim um valu e s fo r continuous operation) 370 A V drm V /jis I 420 A I Itav (sin. 180; 250 A case = 85 °C V V SKKT SKKT 900 800 500 213/08 D 253/08 D

6h6 diode metal

Abstract: b722 6H6 diode h 48 diode general electric DIODE RECTIFIER general electric
Contextual Info: 6H6 PAGE I 6H6 Description and Rating TWIN DIODE — * < * GENERAL DESCRIPTION P ri nc i pa l A p p li ca ti o n: d i o d e w i t h i n d iv i du al s e p a r a t e base pins. Th e type 6H6 is a twinc a t h o d e s D r o u g h t out to The t>H6 is designed

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 370 A V drm dt)cr 420 A 370 A 420 A Itav (sin. 180; Toase = 85 °C) V 900 V 800 V/|xs SKKT 213 SKKT 253 230 A 253 A 230 A 250 A SKKT

GP608

Abstract: GP600 GP601 GP602 GP604 GP606 GP610
Contextual Info: DIOTEC ELECTRONICS CORP UJLU r v r r SÔE » • EfiHTID? GDODISI b7D « D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310) 767-7958 Data Sheet No.: GPDP-601-A p, s , » *Ul-\ / 6 AMP GENERAL PURPOSE SILICON DIODES

marking KDK SOT23

Contextual Info: AZ23C2V7-AZ23C51 Vishay Telefunken 300 mW Dual Surface Mount Zener Diodes Features SOT-23 surface mount package 300 mW power dissipation rating Ideally suited for automatic insertion AVZ for both diodes in one case is < 5% Common cathode style available see DZ series

g4pc50fd

Abstract: g4pc50 g4pc50f g4p-c50 g4pc IRG4PC50FD IRG4PC50F
Contextual Info: International IGR Rectifier PD 9.1469A IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: SCHOTTKY RECTIFIER DIODES, MODULE, SINGLE, CENTER *S 1 P a rt Num ber M a x im u m P e a k F o rw a rd M a x im u m M a x im u m T y p ic a l A ve rage S u r g e C u rre n t Fw d Voltage R e ve rse J u n c tio n R e ctifie d In v B r s a @ 8 3m s g ft tt e tt l<j

melcher lgr 2320-2

Abstract: melcher lgr 1001-2 auo 014 Melcher lgr Melcher LGR 2020-2 schematic diagram ac-dc supply schematic diagram 240 AC to 110 DC converter auo 002 melcher dc dc converter melcher
Contextual Info: Benign Environment AC-DC Converters <40 Watt HR/GR Series 10 and 25 Watt AC-DC Converters HR Series GR Series Single and dual output • Universal AC input • Class II equipment double insulation • 3000 V AC input to output electric strength test • High efficiency up to 86%