MICA SSB Search Results

indiana general

Abstract: F624-19 F627 S175-50 F627-8 S-175 hf power amplifiers 2-30 mhz BYISTOR BYI-1 F625-9
Contextual Info: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz GENERAL DESCRIPTION CASE OUTLINE The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is

Stackpole 57-9322-11

Abstract: EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367
Contextual Info: Order this document by AN593/D MOTOROLA SEMICONDUCTOR 33333 APPLICATION NOTE AN593 BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits Engineering INTRODUCTION Linear power amplifier operation, as used in SSB

MOTOROLA circuit for mrf150

Abstract: UNELCO MICA CAPACITORS motorola MRF150 mrf150 equivalent Unelco J101 BH Rf transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

D913

Abstract: UNELCO MICA CAPACITORS VK200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F150 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

MOTOROLA circuit for mrf150

Abstract: MRF150 mrf150 equivalent UNELCO MICA CAPACITORS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

mrf150

Contextual Info: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

MOTOROLA circuit for mrf150

Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
Contextual Info: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

UNELCO MICA CAPACITORS

Abstract: "RF MOSFET" vk200 choke 2204B J101 MRF150 VK200
Contextual Info: Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

motorola MRF150

Abstract: MOTOROLA circuit for mrf150 Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by M RF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ie ld -E ffe c t Transistor N-Channel Enhancement-Mode MRF150 Designed prim arily fo r linear la rg e -sig n a l output stages up to 150 MHz frequency range.

MRF140 equivalent

Abstract: arco capacitors 262
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

D1115

Abstract: Arco 262 capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field-Effect T ransistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts

MOTOROLA circuit for mrf150

Abstract: MRF150 2204B J101 VK200 169 MHz RF CHIP 18AWG Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N–Channel Enhancement–Mode MRF150 Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

MRF426

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP

"class AB Linear" hf

Abstract: allen bradley CC series Mrf426
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F426 The RF Line NPN Silicon RF P o w er Tran sisto r . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP

MOTOROLA circuit for mrf150

Abstract: mrf150 motorola MRF150 mrf150 equivalent DIODE MOTOROLA B34 B34 motorola diode 910 b34 vk200 choke 2204B J101
Contextual Info: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

BYISTOR

Abstract: indiana general ACR1ANS175-50 F625-9 Acrian S175-50-3 indiana general F624-19 s 175-50 DM15 S175-50
Contextual Info: 0182998 ACRIAN INC T? D E jjO lflE T T fi D D D im t 0 S 1 7 5 - 5 0 175 WATTS - 50 VOLTS 2-30 MHz GENERAL DESCRIPTION The S175-50 is a state-of-the-art 50 volt device designed for class A, AB, or C operation in the HF/VHF frequency bands. Its high collector voltage

blx13

Abstract: 2204B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line N P N Silico n RF Pow er T ran sistor MRF426 . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP

mrf138

Abstract: ARC-2
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power am plifier applications in industrial, com m ercial and am ateur radio equipment to 175 MHz. • Superior High O rder IMD

B0646

Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Contextual Info: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington

AV2026

Abstract: LM1B75 T05B 3 volt audio amplifier class D schematic lm1875 amplifier IC LM 324 LM audio power amplifier LM1875 LM1875T Rs-600n
Contextual Info: Manch 1995 LM1875 20W Audio Power Amplifier General Description Features The LM1875 is a monolithic power amplifier offering very low distortion and high quality performance for consumer audio applications. • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LM1875 delivers 20 watts into a 4 fi or 8i f load on

vk200 choke

Abstract: arco 465 UNELCO MICA CAPACITORS VK200-4B arco capacitors 262 k 246 transistor fet VK200 FERRITE 2204B J101 MRF140
Contextual Info: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

Contextual Info: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

MRF138

Contextual Info: MOTOROLA Order this document by MRF138/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF138 N–Channel Enhancement–Mode . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.