TBAW56
|
|
Toshiba Electronic Devices & Storage Corporation
|
Switching Diode, 80 V, 0.215 A, SOT23 |
|
|
HN1D05FE
|
|
Toshiba Electronic Devices & Storage Corporation
|
Switching Diode, 400 V, 0.1 A, ES6 |
|
|
MG800FXF1JMS3
|
|
Toshiba Electronic Devices & Storage Corporation
|
N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
|
|
TK190U65Z
|
|
Toshiba Electronic Devices & Storage Corporation
|
MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL |
|
|
TK7R0E08QM
|
|
Toshiba Electronic Devices & Storage Corporation
|
MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB |
|
|