MICRON BGA PART MARKING Search Results

MICRON BGA PART MARKING

Abstract: MT44K32M36 MT44K32M36RCT
Contextual Info: 1Gb: x18, x36 TwinDie RLDRAM 3 - Bittware Addendum Features TwinDie RLDRAM 3 - Addendum MT44K64M18 – 2 Meg x 18 x 16 Banks x 2 Ranks MT44K32M36 – 2 Meg x 36 x 16 Banks Features Options Marking • 168-ball FBGA package – 1.25ns and tRC MIN = 10ns

LC256

Abstract: 8941a
Contextual Info: ADVANCE 256K x 18. 128K x 32/36 2.5V I/O. PIPELINED, DCD SYNCBURST SRAM |U |IC =R O N MT58 LC256 K18 F 1 , MT58 LC128 K32 F 1, MT58 LC128 K36 F 1 SYNCBURST SRAM 3.3V Supply, +2.5V I/O, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM FEATURES

Contextual Info: ADVANCE M i n P r i M I •■i— i - i h - i i ' w 256K X 18, 128K X 32/36 3.3V I/O, PIPELIN ED , DCD S Y N C B U R S T SR A M MT58LC256K18C6, MT58LC128K32C6, MT58LC128K36C6 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM

1V120

Contextual Info: ADVANCE 256K x 18/128K x 36 LVTTL, LATCHED LATE WRITE SRAM |U |IC = R O N FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations Single +3.3V +0.3V/-0.2V power supply ( V d d )

A6W 4d

Abstract: SRAM 6T MT58LC256K18G1 mt 1898 le
Contextual Info: ADVANCE 256K x 18. 128K x 32/36 2.5V I/O, PIPELINED. SCD SYNCBURST SRAM I^ IIC R a N MT 58 LC 256 K 18 G 1 , M T 58 LC 128 K32 G 1, MT 58 LC 128 K36 G 1 SYNCBURST SRAM 3.3V Supply, +2.5V I/O, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM

marking code SA

Contextual Info: ADVANCE M I in P n N 256K x 18/128K x 36 LVTTL, PIPELINED LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • Fast cycle times 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations Single +3.3V +0.3V/-0.2V power supply (Vdd)

ic MARKING J LA 8P

Contextual Info: ADVANCE M in P n M I u 2 5 256K x 18/128K x 36 I/O, PIPELINED LATE W RITE SRAM V M T 5 9 L2 5 6 V 18 P M T 5 9 L 128 V 3 6 P I A T E U M I 1_ WRITE SRAM FEATURES • Fast cycle times 4.5ns, 5ns, 6ns and 7ns • 256K x 18 or 128K x 36 configurations • Single + 3 .3 V + 0 .3 V /-0 .2 V p o w e r su p p ly (V dd)

MICRON POWER RESISTOR 4d

Contextual Info: ADVANCE 256K X 18/128K x 36 HSTL, LA T C H E D LA TE W RITE SR AM |V/|IC=RO N A C k J Ih L A T F WRITE SRAM FEATURES • Fast cycle times 5ns, 5.5ns and 6ns • 256K x 18 or 128K x 36 configurations • Single +3.3V +0.3V/-0.2V pow er supply (Vdd) • Separate isolated output buffer supply (V ddQ)

Contextual Info: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 8Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP* • Fast clock and OE# access times

Contextual Info: 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 8Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP* • Fast clock and OE# access times

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 3.3V I/O PIPELINED, DCD SYNCBURST SRAM MT58L256L18D, MT58L128L32D, MT58L128L36D 4Mb SYNCBURST SRAM 3.3V VDD, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times

marking 3U 3T 3C diode

Abstract: MICRON diode 2u micron sram MS-026 MT58L256L18DT-6
Contextual Info: 4Mb: 256K x 18, 128K x 32/36 3.3V I/O PIPELINED, DCD SYNCBURST SRAM MT58L256L18D, MT58L128L32D, MT58L128L36D 4Mb SYNCBURST SRAM 3.3V VDD, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times

Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 3.3V I/O PIPELINED, DCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18D1, MT58L128L32D1, MT58L128L36D1 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD

MICRON diode 2u

Abstract: marking 3U 3T 3C diode marking 2U 58 diode micron sram MS-026 MT58L256L18PT-6
Contextual Info: 4Mb: 256K x 18, 128K x 32/36 PIPELINED, SCD SYNCBURST SRAM MT58L256L18P, MT58L128L32P, MT58L128L36P; MT58L256V18P, MT58L128V32P, MT58L128V36P 4Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES • Fast clock and OE# access times

MT58L256L18F1T

Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18F1, MT58L128L32F1, MT58L128L36F1; MT58L256V18F1, MT58L128V32F1, MT58L128V36F1 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times

Contextual Info: 8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V VDD, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • 100-Pin TQFP*

marking 3U 3T 3C diode

Abstract: MICRON diode 2u micron sram MS-026
Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

Contextual Info: ADVANCE 256K x 18/128K x 36 2.5V I/O, LATCHED LATE WRITE SRAM MT59L256V18L MT59L128V36L 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • • Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

MT58L512L18PT-6

Abstract: MT58L256L32
Contextual Info: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP* • Fast clock and OE# access times

c1096

Contextual Info: ADVANCE |uiic :r 256K X 18/128K x 36 HSTL, FLOW -THROUGH LATE WRITE SRAM o n Dual Clock and Single Clock FEATURES • • • • • • • • • • • • • • • • • • • Fast cycle times 4.5ns, 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE‡ 18Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 18Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •

MICRON BGA PART MARKING

Contextual Info: ADVANCE M il— a n n i I 256K x 18, 128K X 32/36 3.3V I/O, F L O W - T H R O U G H S Y N C B U R S T SR AM MT58LC256K18B4, MT58LC128K32B4, MT58LC128K36B4 SYNCBURST SRAM 3.3V Supply, Flow-Through and Burst Counter SYNCBURST SRAM FEATURES • • • • •

Contextual Info: ADVANCE M • in n r iM 25 6 K x 18, 128K x 32/36 3.3V I/O, PIPELINED. SCD SYNCBURST SRAM MT58LC256K18D9, MT58LC128K32D9, MT58LC128K36D9 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM FEATURES • Fast access times: 3.5ns, 3.8ns, 4.2ns, 4.5ns and 6ns