MICRON POWER RESISTOR Search Results

CMOS Process Family

Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library
Contextual Info: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single

MwT-273

Abstract: mwt 871 MwT-270 sii 021 s-parameter MWT273HP
Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL7GOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally

F4029

Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES DESCRIPTION The MwT-2 is a GaAs M ESFET device whose nominal quarter-micron gate length and 630 micron gate width make it ideally

02011-BRF-001-A

Abstract: M02011 TIA AGC application note
Contextual Info: 622Mbps Transimpedance Amplifier with AGC M02011 Low-power, high-sensitivity, 622Mbps transimpedance amplifier fabricated in sub-micron CMOS The M02011 transimpedance amplifier TIA with automatic gain control (AGC) is fabricated in sub-micron CMOS for

02015-BRF-001-A

Abstract: MINDSPEED M02015 M02015 ONU block diagram cmos agc GPON block diagram TIA AGC application note automatic gain control agc
Contextual Info: 2.5 Gbps Transimpedance Amplifier with AGC M02015 Low-power, high-sensitivity 2.5 Gbps transimped ance amplifier fabricated in sub-micron CMOS The M02015 transimpedance amplifier TIA with automatic gain control (AGC) is fabricated in sub-micron CMOS for high

02014-BRF-001-A

Abstract: M02014 GPON block diagram TIA AGC application note avalanche photodiode ingaas ghz Avalanche cmos photodetector
Contextual Info: 2.5 Gbps Transimpedance Amplifier with AGC M02014 Low-power, high-sensitivity 2.5 Gbps transimped ance amplifier fabricated in sub-micron CMOS The M02014 transimpedance amplifier TIA with automatic gain control (AGC) is fabricated in sub-micron CMOS for high

0.18-um CMOS technology characteristics

Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Contextual Info: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM

TF-680

Abstract: L302 FV09 macros in embedded computing
Contextual Info: DATA SHEET QB-8 / QB-8E 3.3 Volt , 0.44-Micron Gate-Array Description NEC’s 3.3V QB-8 family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring high speeds and low power dissipation. The QB-8 family offers not

mwt-970

Abstract: 16662 ic 74390 61787
Contextual Info: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I

Contextual Info: MwT-12 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL7GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION DESCRIPTION

TGS 822

Contextual Info: MwT-16 M ic r o w a v e • • • • • • 26 GHz High Power GaAs FET techno lo g y 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION

Contextual Info: MwT-12 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION DESCRIPTION

RF MESFET S parameters

Contextual Info: MwT-A8 ÛÊVt M ic r o w a v e 16 GHz High Power GaAs FET techno lo g y H 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 1200 MICRON GATE WIDTH DIAMOND-UKE CARBON PASSIVATION CHOICE OF CHIP AND ONE

nmos transistor 0.35 um

Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
Contextual Info: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power

MWT-871HP

Abstract: MWT871HP 557 b
Contextual Info: MwT-8 16 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y n • • • • 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE • 1200 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION

transistor WT6

Abstract: transistor WT6 45 transistor WT6 Equivalent WT6 transistor 651-220K pin configuration of ic 1496
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y if 50f| • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE

Contextual Info: $ k \ rs m M ic r o w a v e T e c h n o l o g y • • • • • MwT-H16 32 GHz High Power AIGaAs/lnGaAs PHEMT 28 dBm POWER OUTPUT AT 12 GHz 11 dB GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION

transistor MWTA 06

Contextual Info: MwT-11 M ic r o w a v e 14 GHz High Power GaAs FET tec h no lo g y l«-75 -*| i«-75 -*| 4> e » W7mi F • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION

IC tt 3034

Abstract: MWT7HP MWT-7 MwT-770 mwt 773 MWT-770HP
Contextual Info: MwT-7 26 GHz Medium Power GaAs FET M ic r o w a v e T e c h n o l o g y n +20 dBm OUTPUT POWER AT 12 GHz EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR APPUCATIONS • 0.3 MICRON REFRACTORY METALJGOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO PACKAGE TYPES

Contextual Info: MwT-12 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • 0.5 WATT POWER OUTPUT AT 12 GHz • +39 dBm THIRD ORDER INTERCEPT • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 900 MICRON GATE WIDTH • DIAMOND-UKE CARBON PASSIVATION

Contextual Info: MwT-15 M ic r o w a v e T 26 GHz High Power GaAs FET echnology -»j 50 p • • • • +24 dBm OUTPUT POWER AT 12 GHz 9.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH ÏF j* | ^ 0 M » » j P _ 75 241 _ 72

transistor MWTA 06

Abstract: mwta 06
Contextual Info: MwT-A11 14 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y • • • • • • 1 WATT POWER OUTPUT AT 12 GHz HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 2400 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION CHOICE OF CHIP AND ONE

Contextual Info: MwT-3 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • +21 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES

Contextual Info: M w T -1 6 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH DIAMOND-UKE CARBON PASSIVATION