MICRON POWER RESISTOR 2W Search Results

Contextual Info: AP5025 8 Watt Current Sense Chip Resistors A very high power current sense chip resistor capable of dissipating 8 watts with recommended thermal management architecture on the PCB. • Power Dissipation 8 watts with 700 micron PCB thermal Pad • Low resistance values

Contextual Info: Micron Power Resistors “ FRN Terminals And Leads In The Opposite Direction; Axial Configuration Part Numbering System FRW Fusing resistor N 0 2 _ Element_ N: Metal oxide film typeW W: Wire-wound type Rated power 14 - 1/4W 12-1 /2W 0 2 -2 W 1 0-1 0 W

axial 2W resistor

Abstract: MDS-30124 MICRON POWER RESISTOR 2W
Contextual Info: Micron Power Resistors FRN Terminals And Leads In The Opposite Direction; Axial Configuration Part Numbering System FRW F R N Fusing resistor N 2 R 2 Mounting metal fitting N - Nill Nominal resistance The first two digits are for an effective value and the

equivalent of 662K

Abstract: MICRON POWER RESISTOR MLS micron fuse resistors mps 0851 MICRON POWER RESISTOR 24W 662k MPR 55 F resistor ceramic MDS-1212 ML10L meg05n
Contextual Info: Micron Power Resistors Part Numbering System M N S Type MP - Pin terminal MH - Lug terminal MN - Vertical lead terminal MNS 0 5 Rated power 02 - 2W 10 - 10W 15 - 15W Element G-wire -wound type ceramic core S-Wire -wound type. (glass fiber core) R-Metal Oxide Film

micron resistor

Abstract: micron power resistor RLDRAM micron 3*3 resistor
Contextual Info: TN-49-02: Exploring the RLDRAM II Feature Set Introduction Technical Note Exploring the RLDRAM II Feature Set Introduction With network line rates steadily increasing, memory density and performance are becoming extremely important in enabling network processors to perform packet

MICRON POWER RESISTOR 2W

Contextual Info: OBSOLETE 256K, 512K x 64 SGRAM SODIMMs MT2LG25664 K H, MT4LG51264(K)H SYNCHRONOUS GRAPHICS RAM SODIMM For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT (Front View)

MT29F2G16ABA

Abstract: SEAM-40 SMD23 MICRON POWER RESISTOR H33 SEAF-40-05 PISMO2-00006 MT29F2G16AAA MICRON 1.8V 2GB NAND MT29F1G16 PISMO2-P6960
Contextual Info: Advance‡ PISMO2-00006: Micron Mobile SDR SDRAM + NAND Module Introduction Micron PISMO Module Data Sheet PISMO2-00006: Mobile SDR SDRAM + NAND Flash Introduction The PISMO Platform Independent Storage MOdule specification provides a standard external interface to ease memory performance evaluation. This document describes

MARKING CCK

Abstract: micron sram MT57V1MH18E MT57V512H36E
Contextual Info: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, PIPELINED DDRb4 SRAM 18Mb DDR SRAM 4-Word Burst MT57V1MH18E MT57V512H36E Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation

Contextual Info: Intel Xeon Processor MP with up to 2-MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, and 2 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®

251931

Contextual Info: Intel Xeon Processor MP with up to 2-MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, and 2 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®

Contextual Info: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, QDRb2 SRAM 36Mb QDR SRAM 2-WORD BURST MT54V2MH18A MT54V1MH36A Features Figure 1: 165-Ball FBGA • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE

micron sram

Abstract: G38-87 MT54V1MH18A MT54V512H36A
Contextual Info: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, QDRb2 SRAM 18Mb QDR SRAM 2-WORD BURST MT54V1MH18A MT54V512H36A Features Figure 1: 165-Ball FBGA • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE

4p toggle switch

Abstract: MARKING CCK MARKING CODE 9N micron sram MT57V1MH18A MT57V512H36A
Contextual Info: 1 MEG x 18, 512 x 36 2.5V VDD, HSTL, PIPELINED DDRb2 SRAM 18Mb DDR SRAM 2-Word Burst MT57V1MH18A MT57V512H36A Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation

xeon mp 4MB

Abstract: intel ia32 AE30 CK408 socket 615-PIN xeon mp 4MB thermal bt 690
Contextual Info: Intel Xeon Processor MP with up to 4MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, 2, 2.50, 2.80, and 3 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®

Contextual Info: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE

Contextual Info: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, Pipelined DDRb4 SRAM 36Mb DDR SRAM 4-Word Burst MT57V2MH18E MT57V1MH36E Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation

Boundary Scan JTAG Logic

Contextual Info: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, Pipelined DDRb2 SRAM 36Mb DDR SRAM 2-Word Burst MT57V2MH18A MT57V1MH36A Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation

251931

Abstract: intel 251931 TAA 611 T12 intel 830 intel xeon 604 circuit diagram of heat sensor with fan cooling
Contextual Info: Intel Xeon Processor MP with up to 2MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, 2, 2.50, and 2.80 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®

Contextual Info: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, QDRb2 SRAM 36Mb QDR SRAM 2-WORD BURST MT54V2MH18A MT54V1MH36A Features Figure 1: 165-Ball FBGA • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE

MT57V1MH18A

Abstract: MT57V512H36A
Contextual Info: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, PIPELINED DDRb2 SRAM 18Mb DDR SRAM 2-Word Burst MT57V1MH18A MT57V512H36A FEATURES • • • • • • • • • • • • • • • • • Fast cycle times: 5ns, 6ns, and 7.5ns Pipelined double data rate operation

Contextual Info: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, Pipelined DDRb2 SRAM 36Mb DDR SRAM 2-Word Burst MT57V2MH18A MT57V1MH36A Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation

Contextual Info: ADVANCE‡ 0.16µm Process 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM 2-WORD BURST MT54V512H18A Features Figure 1: 165-Ball FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE

MT57V1MH18E

Abstract: MT57V512H36E
Contextual Info: 1 MEG x 18, 512K x 36 2.5V VDD, HSTL, PIPELINED DDRb4 SRAM 18Mb DDR SRAM 4-Word Burst MT57V1MH18E MT57V512H36E FEATURES • • • • • • • • • • • • • • • • 165-BALL FBGA Fast cycle times: 5ns, 6ns, and 7.5ns Pipelined double data rate operation

Contextual Info: 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-BALL FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation