MICRON POWER RESISTOR 4D Search Results

micron 40h resistor

Abstract: MT8LSDT1664HG-662 marking 8Fh API 662 MT8LSDT864HG-10EB5
Contextual Info: 4, 8, 16 MEG X 64 SDRAM SODIMMs SMALL-OUTLINE SDRAM MODULE “ " S ft" " ' For the latest full-length data sheet, please refer to the Micron Web site: www. micron. com/mii/msp/htmi/datasheeL html FEATURES PIN ASSIGNMENT Front View • JEDEC-standard 144-pin, small-outline, dual in-line

Contextual Info: Intel Xeon Processor MP with up to 2-MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, and 2 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®

251931

Contextual Info: Intel Xeon Processor MP with up to 2-MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, and 2 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®

xeon mp 4MB

Abstract: intel ia32 AE30 CK408 socket 615-PIN xeon mp 4MB thermal bt 690
Contextual Info: Intel Xeon Processor MP with up to 4MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, 2, 2.50, 2.80, and 3 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®

MT57V256H36P

Contextual Info: 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Ball FBGA Fast cycle times: 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation

Contextual Info: ADVANCE 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Pin FBGA Fast cycle times: 3.3ns, 4ns, 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation

Contextual Info: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE

Contextual Info: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE

Contextual Info: ADVANCE‡ 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Pin FBGA Fast cycle times: 3.3ns, 4ns, 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation

251931

Abstract: intel 251931 TAA 611 T12 intel 830 intel xeon 604 circuit diagram of heat sensor with fan cooling
Contextual Info: Intel Xeon Processor MP with up to 2MB L3 Cache on the 0.13 Micron Process Datasheet Product Features • ■ ■ ■ ■ Available at 1.50, 1.90, 2, 2.50, and 2.80 GHz Multi-processing server support Binary compatible with applications running on previous members of the Intel®

Contextual Info: 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Ball FBGA Fast cycle times: 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation

Contextual Info: ADVANCE 256K x 36 2.5V VDD, HSTL, PIPELINED DDR SRAM 9Mb DDR SRAM MT57V256H36P FEATURES • • • • • • • • • • • • • • • • • • 165-Pin FBGA Fast cycle times: 3.3ns, 4ns, 5ns and 6ns 256K x 36 configuration Pipelined double data rate operation

Contextual Info: 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation • High frequency operation with future migration to

Contextual Info: 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-BALL FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation

Contextual Info: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation

Contextual Info: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation

Contextual Info: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation

09005aef809f284b

Contextual Info: 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization 8 Meg x 36, 16 Meg x 18, and 32 Meg x 9

MT57W1MH18C

Abstract: MT57W2MH8C MT57W512H36C
Contextual Info: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-Word Burst MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window and future frequency scaling

G38-87

Abstract: MT54W1MH18J MT54W2MH8J MT54W512H36J
Contextual Info: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 18Mb QDR II SRAM 4-Word Burst MT54W2MH8J MT54W1MH18J MT54W512H36J FEATURES 165-BALL FBGA • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window

Contextual Info: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, DDRIIb4 SRAM 18Mb DDRII CIO SRAM MT57W2MH8J MT57W1MH18J MT57W512H36J 4-Word Burst FEATURES • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window

Contextual Info: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 18Mb QDR II SRAM 4-Word Burst MT54W2MH8J MT54W1MH18J MT54W512H36J FEATURES 165-BALL FBGA • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window

Contextual Info: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, DDR SIO SRAM 18Mb DDR SIO SRAM 2-Word Burst MT57W2MH8C MT57W1MH18C MT57W512H36C FEATURES • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window and future frequency scaling

micron sram

Abstract: G38-87 MT54W1MH18B MT54W2MH8B MT54W512H36B RESistor 1R
Contextual Info: ADVANCE‡ 2 MEG x 8, 1 MEG x 18, 512K x 36 1.8V VDD, HSTL, QDRIIb2 SRAM 18Mb QDR II SRAM 2-Word Burst MT54W2MH8B MT54W1MH18B MT54W512H36B FEATURES 165-BALL FBGA • 18Mb Density 2 Meg x 8, 1 Meg x 18, 512K x 36 • DLL circuitry for wide-output, data valid window