icc17
Abstract: No abstract text available
Text: ADVANCE MT28SF161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY QUANTUM DEVICES, INC. 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 3V SMARTVOLTAGE, SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB/(32K-word) erase blocks
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PDF
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MT28SF161
32K-word)
100ns,
150ns
icc17
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MT28F016S3VG-9
Abstract: TRS090 A4 marking Quantum Devices
Text: OBSOLETE ADVANCE 2 MEG x 8 EVEN-SECTORED FLASH MEMORY MT28F016S3 FLASH MEMORY 3V Only, Dual Supply FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10µA MAX 3V-only, dual-supply operation:
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Original
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PDF
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MT28F016S3
110ns
40-Pin
110ns
40-lead
MT28F016S3VG-9
TRS090
A4 marking
Quantum Devices
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY EXTENDED TEMPERATURE BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F400B1 VET, MT28F800B1 VET, MT28F002B1 VET, MT28F004B1 VET, MT28F008B1 VET Low Voltage, Extended Temperature FEATURES • Extended temperature range operation:
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OCR Scan
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PDF
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MT28F400B1
MT28F800B1
MT28F002B1
MT28F004B1
MT28F008B1
16KB/4K-word
128KB/64K-word
120ns
100ns
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F800S2/MT28F008S2 512K x 16,1 MEG x 8 FLASH MEMORY MICRON I QUANTUM DEVICES, MC. FLASH MEMORY 8 MEG SmartVoltage SVT-II , SECTORED ERASE FEATURES • • • • Sixteen 64KB/(32K-word) erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX
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OCR Scan
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PDF
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MT28F800S2/MT28F008S2
32K-word)
120ns
100ns,
150ns
70ns/80ns
100ns
120ns/150ns
MT28F800S2)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 2 MEG, BIOS-OPTIMIZED, BOOT BLOCK FLASH MEMORY MICRON I QUANTUM DEVICES, INC. FLASH MEMORY MT28F200C1 MT28F002C1 FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks (96KB and 128KB)
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OCR Scan
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PDF
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MT28F200C1
MT28F002C1
16KB/8K-word
128KB)
44-Pin
40-PIN
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MICRON I 512Kx 16,1 MEG x 8 BOOT BLOCK FLASH MEMORY QUANTUM DEVICES, INC. FLASH MEMORY MT28F8o°B1 S m artV FEATURES PIN ASSIGNMENT Top View 44-Pin SOP (FA-1) • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word param eter blocks
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OCR Scan
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PDF
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512Kx
16KB/8K-word
110ns
MT28F8o
44-Pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT28F400B1 256K x 16, 512K x 8 FLASH MEMORY MICRON M QUANTUM DEVICES, INC. FLASH MEMORY 256K x 16, 512K x 8 S martV oltage , BOOT BLOCK FEATURES • Seven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Four main memory blocks
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OCR Scan
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PDF
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MT28F400B1
16KB/8K-word
100ns
110ns,
150ns
48-PIN
MT2BF400B1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT28F004B1 512K x 8 FLASH MEMORY MICRON U QUANTUM DEVICES, INC. FLASH MEMORY 512K x 8 S m a r tV o lta g e , BOOT BLOCK FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Four main memory blocks
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OCR Scan
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PDF
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MT28F004B1
100ns
110ns,
150ns
40-Pin
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Quantum Devices
Abstract: No abstract text available
Text: ADVANCE MICRON 2 MEG x 8 E V E N - S E C T O R E D F L ASH M E M O R Y FLASH MEMORY MT28F016S3 I QUANTUM Devices, HC. 3V Only, Dual Supply FEATURES * * * * * * * * Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: IOjiA MAX 3V-only, dual-supply operation:
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OCR Scan
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PDF
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MT28F016S3
110ns
40-lead
MT28F016S3VG-9
MT28F016S3
Quantum Devices
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 1 MEG x 8 E V E N - S E C T O R E D FLASH M E M O R Y FLASH MEMORY MT28F008S3 I QUANTUM Devices, HC. 3V Only, Dual Supply FEATURES * * * * Sixteen 64KB erase blocks Programmable sector protect Deep Power-Down Mode: I O A MAX 3V-only, dual-supply operation:
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OCR Scan
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PDF
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MT28F008S3
110ns
110ns
40-lead
MT28F008S3VG-9
MT28F008S3
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Flash SIMM 80
Abstract: 80 pin simm flash 30 pin simm memory 80pin simm
Text: ADVANCE 2MB-32MB FLASH SIMM MICRON I QUANTUM DEVICES, INC. 80-PIN FLASH SIMM FLASH MODULE FEATURES • JEDEC- and industry-standard pinout in an 80-pin single in-line memory module SIMM • 2MB (512K x 32), 4MB (1 Meg x 32), 8MB (2 Meg x 32), 16MB (4 Meg x 32), 32MB (8 Meg x 32)
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OCR Scan
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PDF
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2MB-32MB
80-PIN
Flash SIMM 80
80 pin simm flash
30 pin simm memory
80pin simm
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MT28F002B1VG-8 B
Abstract: No abstract text available
Text: PRELIMINARY MT28F002B1 256K x 8 FLASH MEMORY MICRON U QUANTUM DEVtCEft, INC. FLASH MEMORY 256K x 8 S m artV o ltag e, FEATURES • Five erase blocks: 16KB boot block protected Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8(aA at 5V Vcc; 8|xA at
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OCR Scan
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PDF
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MT28F002B1
100ns
110ns,
150ns
40-Pin
VMT28F002B1
001b34b
MT28F002B1VG-8 B
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 1 MEG x 8 B O O T B L O C K FLASH M E M O R Y QUANTUM D ev ices, HC. MT28F008B5 FLASH MEMORY 5V Only FEATURES * Eleven erase blocks: 16KB boot block protected Two 8KB parameter blocks Eight main m em ory blocks * 5V-only operation: 5V ±10% Vcc
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OCR Scan
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PDF
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MT28F008B5
00000H)
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a1u marking
Abstract: No abstract text available
Text: PR E LI M IN A R Y MICRON I 1 2 8 K , 2 5 6 K , 5 1 2 K x 16 B O O T B L O C K F L ASH M E M O R Y QUANTUM Devices, HC. FLASH MEMORY MT28F200B5 ET, MT28F400B5 ET, MT28F800B5 ET Smart 5 Extended Temperature FEATURES * Extended temperature range operation: -40°C to +85°C
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OCR Scan
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PDF
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16KB/4K-word
128KB/
64K-word
MT28F200B5
MT28F400B5
MT28F800B5
44-Pin
a1u marking
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marking code 2t7
Abstract: No abstract text available
Text: ADVANCE MT28F800B1 512K x 16,1 MEG x 8 FLASH MEMORY MICRON I QUANTUM DEVICES, MC. FLASH MEMORY 512K x 16,1 MEG x 8 S mart FEATURES oltage 44 3 R P* A ïs C 2 43 3 W E * At 7 C 3 42 □ AS A7 C 4 41 ] A9 A6 C S 40 ] A10 AS C 6 39 3 A 11 A4 C 7 38 3 A 12 A3 C 8
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OCR Scan
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PDF
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MT28F800B1
48-Pin
MT2BF800B1
marking code 2t7
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 512K x 16 A D V A N C E D B O O T B L O C K FLASH M E M O R Y QUANTUM D ev ices, HC. MT28F800A3 FLASH MEMORY S mart 3 FEATURES PIN A S S I G N M E N T Top View * T w en ty -th ree erase blocks: T w o 4K -w ord b o o t blocks (protected)
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OCR Scan
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PDF
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110ns,
150ns
MT28F800A3
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Untitled
Abstract: No abstract text available
Text: MICRON I 2 MEG, B I OS - O P T I M I Z E D B O O T B L O C K F L ASH M E M O R Y QUANTUM D ev ices, w c . FLASH MEMORY FEATURES PIN ASSIGNMENT Top View * Five erase blocks: 16K B /8K -w ord boot block (protected) Two 8K B/4K -w ord param eter blocks Two main m em ory blocks (96KB and 128KB)
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OCR Scan
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PDF
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128KB)
44-Pin
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Untitled
Abstract: No abstract text available
Text: MICRON I 256K x 8 B O O T B L O C K F L ASH M E M O R Y QUANTUM D ev ices, w c . FLASH M EM O R Y mt28 foo2bi S m a rtV oltage FEATURES * Five erase blocks: 16K B b oot b lock p rotected T w o 8K B p aram eter blocks T w o m ain m em o ry blocks * S m artV o ltag e T ech n o lo g y (SVT):
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OCR Scan
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PDF
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Micron Quantum Devices
Abstract: 28F400B
Text: MICRON I 256K x 16, 512K x 8 B O O T B L O C K F L ASH M E M O R Y QUANTUM D e v ic e s , w c . FLASH M EM O RY mt28F4oobi S m a r tV oltage FEATURES * Seven erase blocks: 1 6 K B /8 K -w o rd b o o t b lo ck p rotected T w o 8 K B /4 K -w o rd p a ra m eter blocks
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OCR Scan
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PDF
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mt28F4
Micron Quantum Devices
28F400B
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Untitled
Abstract: No abstract text available
Text: ADVANCE I QUANTUM DEVICES INC FLASH MEMORY 256K x 16,512K x 8 FEATURES • Seven erase blocks: - 16KB/8K-word boot block protected - Two 8KB / 4K-word parameter blocks - Four general memory blocks • Low power 100(iA standby; 60mA active, MAX • 5V±10% read; 12V±5% write/erase
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OCR Scan
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PDF
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16KB/8K-word
100ns
100ns
MT28F400
MT28F400
16-bit
MT2BF400
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F004 512K x 8 FLASH MEMORY MICRON I DEVICES. 'NC 512K x 8 I 5V/12V, BOOT BLOCK 5/12 VOLT FLASH MEMORY FLASH MEMORY FEATURES • Seven erase blocks: - 16KB boot block protected - Two 8KB parameter blocks - Four general memory blocks • Low pow er lOOfiA standby; 60mA active, MAX
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OCR Scan
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PDF
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MT28F004
V/12V,
100ns
100ns
00000H)
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Untitled
Abstract: No abstract text available
Text: P R EL IM IN A R Y EXTENDED TEMPERATURE B O O T B L O C K F L ASH M E M O R Y MICRON I QUANTUMDevices, INC. MT28F400B1 VET, MT28F800B1 VET, MT28F004B1 VET, MT28F008B1 VET FLASH MEMORY L o w Voltage, Extended Tem perature FEATURES PIN ASSIGNMENT Top View
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OCR Scan
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PDF
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MT28F400B1
MT28F800B1
MT28F004B1
MT28F008B1
16KB/4K-word
128KB/64K-word
100ns
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F016S2 2 MEG x 8 FLASH MEMORY MICRON • quantumdevices,me. FLASH MEMORY 2 MEG x 8 S m a r tV o lta g e SVT-II , SECTORED ERASE FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX
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OCR Scan
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PDF
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MT28F016S2
120ns
100ns,
150ns
40-Pin
70ns/80ns
MT2BF016S2
001bS4b
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Untitled
Abstract: No abstract text available
Text: ADVANCE FLASH MEMORY MT28F008B5 FEATURES • Eleven erase blocks: 16KB boot block protected Two 8KB parameter blocks Eight main memory blocks • 5V-only operation: 5V ±10% Vcc 5V ±10% (12V compatible) V pp • Extended temperature range option: -40°C to +85°C
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OCR Scan
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PDF
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MT28F008B5
40-Pin
00000H)
48-PIN
0020bfl2
80-PIN
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