MICRON TECHNOLOGY 2U Search Results

IL324

Abstract: ZM14 062 JRC
Contextual Info: ADVANCE 1, 2 MEG X 32 SDRAM DIMM MICRON I TECHNOLOGY, INC. MT2LSDT132U MT4LSDT232UD SYNCHRONOUS DRAM M O D U L E F or the latest data sheet revisions, please refer to the Micron Web site: www.m icron.com /m ti/m sp/htm l/datasheet.htm l FEATURES * * * * *

Contextual Info: 2 MEG X 32 SDRAM DIMM MICRON I TECHNOLOGY, INC. MT4LSDT232U SYNCHRONOUS DRAM MODULE For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View • JED EC pinout in a 100-pin, dual in-line m em ory

Contextual Info: Integrated Device Technology, Inc. 3.3V LOW SKEW PLL-BASED CMOS CLOCK DRIVER WITH 3-STATE FEATURES: • 0.5 MICRON C M O S Technology • Input frequency range: 10MHz - f2Q Max. spec (FREC LSEL = HIGH) • Max. output frequency: 150MHz • Pin and function com patible with FCT88915T, M C88915T

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 PIPELINED, SCD SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. MT58L256L18P, MT58L128L32P, MT58L128L36P; MT58L256V18P, MT58L128V32P, MT58L128V36P 4Mb SYNCBURST SRAM 3.3V Vdd, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. MT58L512L18D, MT58L256L32D, MT58L256L36D; MT58L512V18D, MT58L256V32D, MT58L256V36D 8Mb SYNCBURST SRAM 3.3V Supply, 3.3V or 2.5V I/O, Pipelined, Double-Cycle Deselect

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON* I TECHNOLOGY, INC. 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V Supply, 3.3V or 2.5V I/O, Flow-Through FEATURES • • •

ADSP-1009A

Abstract: a08p TDC-1009J TDC1009J1 ADSP1009 ADSP-1009A-JG
Contextual Info: ANALOG DEVICES □ 12 x 12 -B it CMOS Multiplier/Accumulator ADSP-1009A FEATURES 12 x 12-Bit Parallel Multiplication/Accumulation 70ns Multiply/Accumulate Time 375mW Power Disiipation with TTL-Compatible 1.5 Micron CMOS Technology Pin-Compatible with ADSP-1009, TDC1009J1, and

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 4Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and OE# access times

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON' I TECHNOLOGY, INC. MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 8Mb SYNCBURST SRAM 3.3V V dd, 3.3V or 2.5V I/O, Flow-Through FEATURES • Fast clock and O E# access times

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 PIPELINED, DCD SYNCBURST SRAM MICRON I TECHNOLOGY, INC. MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V V dd, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • •

Contextual Info: MICRON I 64K TECHNOLOGY, INC. X MT58LC64K32/36D8 32/36 SYNCBURST SRAM 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES OPTIONS R P R NC/DQP3* DQ17 DQ18 Vcc Vss DQ19 DQ20 DQ21 DQ22 Vss Vcc

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON I TECHNOLOGY, INC. MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 3.3V V d d , 3.3V or 2.5V I/O, Flow-Through 4Mb SYNCBURST SRAM FEATURES • Fast clock a n d OE# access tim es

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON I TECHNOLOGY, INC. MT58L256L18F, MT58L128L32F, MT58L128L36F; MT58L256V18F, MT58L128V32F, MT58L128V36F 3.3V V d d , 3.3V or 2.5V I/O, Flow-Through 4Mb SYNCBURST SRAM FEATURES • Fast clock a n d OE# access tim es

Contextual Info: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 LVTTL, PIPELINED LATE WRITE SRAM MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256L18P MT59L128L36P FEATURES * Fast cycle times 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations * Single +3.3V +0.3V/-0.2V power supply (Vdd)

Contextual Info: ADVANCE MT58LC128K32/36G1 128K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES * * U û. * Si S > (D N liJliJS S S S liJ o ifl_l>§LU O O O CO O

remote control for home appliances rf based

Abstract: control for home appliances rf based RF based speed control of ac motor t319 8 BIT ALU trackball STK58C318 remote control for home appliances Micro joystick rf remote speed control of ac motor
Contextual Info: SYNTEK DESIGN TECHNOLOGY H3E"p • Ûfll0h34 □□□□0D7 S mk STK58C318 MICRO CONTROLLER GENERAL DESCRIPTION STK58C318 8 - bit microcontroller is a low power» high speed CMOS device containing RAM > 1 / 0 > CPU > and customer - defined MASK ROM on a single chip. STK58C318 uses a advanced 1.2 micron CMOS

Contextual Info: AD VA NC E 25 6 K x 1 8 / 1 2 8K x 36 HSTL, L A T C H E D LATE WRITE SRAM MICRON U TECHNOLOGY, INC. MT59L256H18L MT59L128H36L 4.5Mb LATE WRITE SRAM FEATURES * * * * * * * * * * * * * * * * * * * Fast cycle times 5ns, 5.5ns and 6ns 256K x 18 or 128K x 36 configurations

Contextual Info: ADVANCE 256K X 18/128K x 36 3.3V V dd, LVTTL, PIPELINED CLAYMORE SRAM MICRON I TECHNOLOGY, INC. 4.5Mb CLAYMORE SRAM MT57L256L18P MT57L128L36P FEATURES • • • • • • • • • • • • • • • • • • • • Fast cycle times: 5.5ns, 6ns, 7ns and 8ns

Contextual Info: ADVANCE 256K X 18/128K x 36 3.3V V dd, HSTL, PIPELINED CLAYMORE SRAM MICRON I TECHNOLOGY, INC. MT57L256H18P MT57L128H36P 4.5Mb CLAYMORE SRAM FEATURES • • • • • • • • • • • • • • • • • • • • • Fast cycle times: 4.4ns, 5ns, 5.5ns, 6ns and 7ns

Contextual Info: ADVANCE 256K X 18/128K x 36 2.5V V dd, HSTL, PIPELINED CLAYMORE SRAM MICRON I TECHNOLOGY, INC. MT57V256H18P MT57V128H36P 4.5Mb CLAYMORE SRAM FEATURES • • • • • • • • • • • • • • • • • • • • • Fast cycle times: 4.4ns, 5ns, 5.5ns, 6ns and 7ns

Contextual Info: ADVANCE MICRON I TECHNOLOGY, INC. MT58L256L18P, MT58L128L32P, MT58L128L36P; MT58L256V18P, MT58L128V32P, MT58L128V36P 4Mb SYNCBURST SRAM 3.3V V d d , 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES • Fast clock a n d OE# access tim es • Single +3.3V +0.3V/-0.165V p o w er su p p ly V dd

Contextual Info: ADVANCE 256K x 18/128K x 36 2.5V I/O, PIPELINED LATE WRITE SRAM MICRON I TECHNOLOGY, INC. MT59L256V18P MT59L128V36P 4.5Mb LATE WRITE SRAM FEATURES • • • • • • • • • • • • • • • • Fast cycle times 4.5ns, 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations

Contextual Info: PR E LI M IN A R Y 2 MEG X 32 SDRAM DIMM MICRON I TECHNOLOGY, INC. MT4LSD T 232U SYNCHRONOUS DRAM M O D U L E FEATURES * JEDEC pinout in a 100-pin, dual in-line mem ory * * * * * * * * * * * * PIN A S S I G N M E N T (Front View) m odule (DIMM) 8MB (2 M eg x 32)

HC- 543

Contextual Info: AD VA NC E 25 6 K X 1 8 / 1 2 8K x 36 HSTL, F L O W - T H R O U G H LATE WRITE SRAM MICRON U TECHNOLOGY, INC. 4.5Mb LATE WRITE SRAM MT59L256H18F MT59L128H36F Dual Clock and Single Clock FEATURES * Fast cycle times 4.5ns, 5ns, 6ns and 7ns * 256K x 18 or 128K x 36 configurations