MICRON TLC Search Results

toshiba tc110g

Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective

Micron TLC

Abstract: micron emmc Micron NAND onfi MICRON NAND MLC TLC nand MICRON NAND sLC micron ecc nand ONFI micron emmc application note SLC NAND endurance
Contextual Info: Micron Memory Which NAND solution is best for my design? Micron offers a full line of high-performance memory solutions—from SLC, MLC, and TLC to Serial NAND, e•MMC , and MCPs—for a variety of applications. And we work with chipset vendors, OS designers, and other

Micron NAND flash controller

Abstract: TLC nand Micron NAND Flash MLC Micron TLC nand flash ONFI 3.0 micron emmc nand flash tlc emmc ONFI ONFI 3.0
Contextual Info: NVM Advantages for Multiple Markets Micron Nonvolatile Memory Micron does more than design and manufacture nonvolatile NVM memory. We strive to solve design challenges through better engineering—by raising the bar on features, functionality, and performance. We’ll

smd transistor A6t 50

Abstract: transistor A6t 45 smd transistor A6t A6T TRANSISTOR smd transistor marking A14 A6t smd Transistor
Contextual Info: MICRON TECHNOLOGY INC 17E D • blllSMI OOGlflMb ñ ■ MICRON H 1E»W icucv.’î wc MT5C2561 883C MILITARY SRAM 256K X 1 SRAM " M f e - Z S .- O S AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-88725 • JAN M38510/293 « RAD-tolerant (consult factory)

TC150GC8

Abstract: TC150GH2 toshiba tc110g TC140G toshiba tc140g TC110G TC150G89 toshiba toggle nand tc120g
Contextual Info: TOSHIBA TOSHIBA. A M E R IC A ELECTRONIC C O M PO N E N TS , IIMC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 100K useable gates— one of the highest in the industry.

Contextual Info: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o lo g y +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH n P J — ^ mm iVYi

Contextual Info: MwT-15 M ic r o w a v e T 26 GHz High Power GaAs FET echnology -»j 50 p • • • • +24 dBm OUTPUT POWER AT 12 GHz 9.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH ÏF j* | ^ 0 M » » j P _ 75 241 _ 72

Contextual Info: ADVANCE MICRON MT24D836 8 MEG X 36, 16 MEG X 18 DRAM MODULE 1 MICRON T E C H N O L O G Y INC 55E D • 8 MEG X 36,16 FAST PAGE MODE MEG x18 FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-perform ance, CM OS silicon-gate process

UDZV2.0B

Contextual Info: P400e 1.8-Inch NAND Flash SSD Features P400e 1.8-Inch SATA NAND Flash SSD MTFDDAA050MAR, MTFDDAA100MAR, MTFDDAA200MAR, MTFDDAA400MAR Features • Micron 25mm MLC NAND Flash • Capacity1 unformatted : 50GB, 100GB, 200GB, 400GB • RoHS-compliant package

MTFDDAA100MAR

Contextual Info: P400e 1.8-Inch NAND Flash SSD Features P400e 1.8-Inch SATA NAND Flash SSD MTFDDAA050MAR, MTFDDAA100MAR, MTFDDAA200MAR, MTFDDAA400MAR Features • Micron 25nm MLC NAND Flash • Capacity1 unformatted : 50GB, 100GB, 200GB, 400GB • RoHS-compliant package

Contextual Info: ACT 3 Field Programmable Gate Arrays Preliminary Features Description • The ACT 3 family, based on Actel’s proprietary PLICE antifuse technology and 0.8-micron double-metal, double-poly CMOS process, offers a high-performance programmable solution

CB12000

Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18
Contextual Info: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)

LCA100K

Abstract: LSI LOGIC LCA100K
Contextual Info: »• * LSI LOGIC * LCA100K Compacted Array Plus Series Description The LCA100K Compacted A rray Plus Series is an HCMOS Array-Based ASIC ApplicationSpecific Integrated Circuit product offering extremely high performance. The LCA100K Series is manufactured using 1.0-micron

ST100

Abstract: CB55000 CB65000 D950 ST10 ST20 tristate nand gate
Contextual Info: CB65000 Series HCMOS8D Standard Cells Family FEATURES • ■ ■ ■ ■ ■ 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography.

Contextual Info: LSI LOGIC LCA100K Compacted Array P lu s Series 0.7-Micron HCMOS Description The LCA100K Compacted Array Plus series is an HCMOS array-based ASIC product offering extremely high performance, combined with very high gate counts. The LCA100K series is manufac­

transistor nd8

Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
Contextual Info: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.

Contextual Info: LSI LOGIC LCA10QK Compacted Array Plus Series 0.7-Micron HCMOS Preliminary Description The LCA100K Compacted Array Plus series is an HCMOS array-based ASIC product offering ex­ tremely high performance, combined with very high gate counts. The LCA100K series is manufactured

Contextual Info: Preliminary‡ P400e mSATA NAND Flash SSD Features P400e mSATA NAND Flash SSD MTFDDAT064MAR, MTFDDAT128MAR, MTFDDAT256MAR Features • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash RoHS-compliant package SATA 6 Gb/s interface

0.18-um CMOS technology characteristics

Abstract: CB55000 CB65000 D950 ST10 ST100 ST20 CMOS GATE ARRAY stmicroelectronics 12v na 19.5v 0.18-um CMOS technology characteristics 1.2V
Contextual Info: CB65000 Series HCMOS8D 0.18µm Standard Cells Family FEATURE • 0.18 micron drawn, six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided active areas and gates. Deep UV lithography. ■ 1.8 V optimized High Performance and Low

Contextual Info: IBM04361BULAA IBM04181BULAA Preliminary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.45 Micron CMOS Technology • Synchronous Register-Latch Mode Of Operation with Self-Timed Late Write • Single Differential PECL Clock compatible with

Contextual Info: IBM04184ARLAA IBM04364ARLAA Preliminary 128K X 36 & 256K X 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Latched Outputs • 0.4 Micron CMOS Technology • Asynchronous Output Enable and Power Down Inputs • Synchronous Register-Latch Mode Of Opera­

UDZV2.0B

Contextual Info: Preliminary‡ P400e mSATA NAND Flash SSD Features P400e mSATA NAND Flash SSD MTFDDAT064MAR, MTFDDAT128MAR, MTFDDAT256MAR Features • • • • • • • • • • • • • • Micron 25nm MLC NAND Flash RoHS-compliant package SATA 6 Gb/s interface

ALU IC 74181 architecture

Abstract: ALU IC 74181 circuit diagram ALU IC 74181 FUNCTION TABLE INTERNAL DIAGRAM OF IC 74181 8 BIT ALU by 74181 circuit ALU 74-181 ALU IC 74181 74181 motorola "alu 4 bit" alu 74181
Contextual Info: LSI M, \ 1 Vy / ' lock LSA2001 SHicon-Gate HCMOS Structured Array , \ f ei 005793 O L S L * Description The LSA2001 is a member of LSI Logic Corporation's 2-micron HCMOS Structured Array family. These very high-performance application-specific integrated cir­

AO4L

Abstract: ld3p AO15A AO16A FD3S AO15AN AO23L BT8C datasheet MTC-35400 mux2*1
Contextual Info: MTC-35000 CMOS 0.5µ Standard Cell Library Services October ‘98 CMOS Family Features • Technology - 0.5µ CMOS for mixed analog 2 digital application - 0.5 micron CMOS transistors, triple layer metal, single or doble poly layer - Self-aligned twin tub Nand P-wells