MICROWAVE BJT 2GHZ Search Results

power BJT

Abstract: HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B
Contextual Info: ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137 Abstract A two-stage 1.9GHz monolithic low-noise amplifier LNA with a measured noise figure of

varactor diode model in ADS

Abstract: zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode
Contextual Info: Advanced Design System 2001 Oscillator DesignGuide August 2001 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

LNA ku-band

Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)

N6 Amplifier

Abstract: MMic Marking 3 SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 mmic marking A MMIC N6 MARKING N6 marking n6 amplifier marking N6 mmic NLB-310 NLB-310-E
Contextual Info: NLB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

bias of GaAs MESFET

Abstract: NLB-300-T1 MMIC Amplifier Micro-X 10GHz power amplifier mmic marking A NLB-300 NLB-300-E MMic Marking 3 10GHz mmic GaAs Amplifier Micro-X Marking A
Contextual Info: NLB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

N4 MMIC

Abstract: marking n4 mmic N4 Amplifier mmic marking A MICROWAVE BJT 2GHZ NLB-400-E MMIC Amplifier marking A Cascadable SiGe HBT MMIC Amplifier GaAs Amplifier Micro-X Marking A MMic Marking 3
Contextual Info: NLB-400 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

monolithic amplifier MAR 3 app note

Abstract: HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ
Contextual Info: Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE Keywords: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise amplifier, quick chip Mar 17, 2000 APPLICATION NOTE 644 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz

power one pmp 3.24

Abstract: MARKING N6 RFMD MMIC N6 MARKING RFMD amplifier marking n6 MMIC Amplifier marking D MMIC Amplifier Micro-X marking D 10GHZ GAAS 10GHz mmic 100GHz BJT
Contextual Info: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features „ „ „ „ „ GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm

DC TO 20GHZ RF AMPLIFIER MMIC

Abstract: 100ghz MMIC POWER AMPLIFIER hemt RESISTOR 502 NBB-502 NBB-502-E NBB-502-T1 GaN Amplifier 20GHz IT 502
Contextual Info: NBB-502 NBB-502Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS 3 Features

70GHz HEMT Amplifier

Contextual Info: NLB-300 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

NE5510279A

Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
Contextual Info: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is

Contextual Info: NBB-402 NBB-402Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features      Reliable, Low-Cost HBT Design 15.0dB Gain, +15.8dBm P1dB@2GHz High P1dB of

84-1LMI

Abstract: NBT-168 NBT-168-D NBT-168-T1 BO 336 choke flange
Contextual Info: NBT-168 4 MICROWAVE GaInP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,

84-1LMI

Abstract: GaN matching 100 watt NBT-168 MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce
Contextual Info: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,

Contextual Info: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features      Reliable, Low-Cost HBT Design 12.0dB Gain, +13.7dBm P1dB@2GHz Pin 1 Indicator High P1dB of +14.0dBm@6.0GHz and +11.0dBm@14.0GHz

current feedback amplifier 4Ghz

Contextual Info: NBB-502 NBB-502Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features      Reliable, Low-Cost HBT Design 19.0dB Gain, +13.0dBm P1dB@2GHz High P1dB of

Contextual Info: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic Features „ „ „ „ „ Reliable, Low-Cost HBT Design Pin 1 Indicator 12.0dB Gain, +13.7dBm P1dB@2GHz 1 2 3 8 9 4 7 6 5

Contextual Info: RFSW2043 RFSW2043DC to 20Ghz SPDT pHEMT GaAs Switch DC TO 20GHz SPDT pHEMT GaAs SWITCH Package: QFN, 16 pin, 0.8mmx3mmx3mm NC A B A 16 15 14 13 NC 1 12 NC GND 2 11 GND RF2 3 10 RF1 GND 4 9 GND Features  Low Insertion Loss: 2.25dB at 20GHz  High Isolation: 26dB at 20GHz

Contextual Info: RFSW2045 RFSW2045DC to 16Ghz SP4T pHEMT GaAs Switch DC TO 16GHz SP4T pHEMT GaAs SWITCH Package: QFN, 24 pin, 0.8mm x 4mm x 4mm 6 5 4 3 2 1 7 Features  8 Low Insertion Loss: 2.4dB at 16GHz  High Isolation: 38dB at 16GHz  21ns Switching Speed  GaAs pHEMT Technology

RFSW2044SR

Contextual Info: RFSW2044 RFSW2044DC to 25Ghz SPST pHEMT GaAs Switch DC TO 25GHz SPST pHEMT GaAs SWITCH Package: QFN, 16 pin, 0.8mm x 3mm x 3mm NC GND RFOut GND 16 15 14 13 NC 1 12 NC NC 2 11 V2 NC 3 10 V1 NC 4 9 NC Features  Low Insertion Loss: 2.7dB at 25GHz  High Isolation: 41dB at 25GHz

VCC1

Abstract: GaN Amplifier 20GHz
Contextual Info: NDA-320-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description

RFSW2041

Abstract: 20GHz JESD22-A114 RFmd SPDT 211nc RFSW2041SB
Contextual Info: RFSW2041 RFSW2041DC to 20Ghz SPDT pHEMT GaAs Switch DC TO 20GHz SPDT pHEMT GaAs SWITCH Package: QFN, 16-pin, 0.8mmx3mmx3mm V2 V1 GND RF1 16 15 14 13 NC 1 12 GND GND 2 11 NC RFIN 3 10 NC GND 4 9 GND Features  Low Insertion Loss: 1.7dB at 20GHz  High Isolation: 38dB at 20GHz

84-1LMI

Abstract: Ablebond 84-1LMI NDA-410-D GaN Bias 25 watt
Contextual Info: NDA-410-D 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 11GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers GENERAL PURPOSE

HBT 20Ghz

Contextual Info: RFSW2040 RFSW2040DC to 20Ghz SPST pHEMT GaAs Switch DC TO 20GHz SPST pHEMT GaAs SWITCH Package: QFN, 16 pin, 0.8mm x 3mm x 3mm Features  Low Insertion Loss: 1.4dB at 20GHz  High Isolation: 37dB at 20GHz  Excellent Return Loss  21nS Switching Speed