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    MICROWAVE MOSFET Search Results

    MICROWAVE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MICROWAVE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    AC2092

    Abstract: AC2091 TM6010 AVANTEK utc5 TM721 MWA120 MWA230 TL9014 GPD462 mwa110
    Text: RF & Microwave Amplifiers Spectrum Microwave, a world class leader in amplifier technology, is your full service partner for high performance amplification requirements. Following the successful heritage firms of Amplifonix and Qbit, Spectrum Microwave continues to broaden its technology base


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    power amplifier s band 3 ghz 100w

    Abstract: digital Pre-distortion power amplifier s band ghz mhz 100w envelope tracking Power amplifier GaN amplifier 100W composite ferrites SM2122-52LD Stealth Microwave Micronetics Wireless MICA Microwave mixers
    Text: www.stealthmicrowave.com Stealth Microwave, Inc. Tel: 609-538-8586 Fax: 609-538-8587 Toll Free: 888-772-7791 Digital Predistortion Power Amplifier Developments Stealth Microwave, is a division of Micronetics, Inc. About Micronetics: Micronetics manufactures microwave and radio frequency RF components and integrated


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    MSPD2018

    Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
    Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800


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    PDF foc17091 MSPD2018 MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode

    Avantek yig

    Abstract: yig oscillator hp AVANTEK YIG tuned oscillator AVANTEK, yig yig oscillator avantek avantek yig oscillator avantek YTO HP yig oscillator YIG Bandpass Filters yig band filter
    Text: Glossary Terms and Definitions Cascade Aluminum Oxide, Al203 — Alumina ceramic is used as the substrate material on which is deposited thin conductive and resistive layers for thinfilm microwave integrated circuits. A series of microwave amplifier stages connected


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    PDF Al203) Avantek yig yig oscillator hp AVANTEK YIG tuned oscillator AVANTEK, yig yig oscillator avantek avantek yig oscillator avantek YTO HP yig oscillator YIG Bandpass Filters yig band filter

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


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    PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    westcode scr

    Abstract: toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR
    Text: 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power Conversion Products Our valued suppliers Click on the supplier name below to visit their storefront on www.rell.com Richardson Electronics’ RF, Wireless & Power Division designs and distributes


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    PDF G15000CR MK100104 westcode scr toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


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    PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    QBH-2832

    Abstract: 300 watt mosfet amplifier class AB GaN ADS QBS-398 semiconductors cross reference 1000 watt mosfet power amplifier BXMP1037 QBS-227 QBS-234 QBS-367
    Text: RF & Microwave Power Amplifiers Spectrum Microwave, a world class leader in amplifier technology, is your full service partner for high performance power amplification requirements. Designed To Perform Efficient amplification is a system For more information or to let us know how


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    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


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    OPT05

    Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
    Text: As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest 2008 Rev. 09/08 Empower RF Systems, Inc. ¬ Empower RF Systems, Inc. 316 West Florence Ave. Inglewood, CA 90301 Phone: +1 310 412-8100 Fax: +1 (310) 412-9232 Email: sales@empowerrf.com


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    Anaren Microwave

    Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter
    Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been


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    stacked transistor shunt switch

    Abstract: RF 107 CMOS Stacked RF M21 mosfet matrix m21 SPDT stacked FET r01n Peregrine MRF MOSFET
    Text: CMOS SOS SWITCHES DESIGN CMOS SOS Switches Offer Useful Features, High Integration Understanding the basic theory and characteristics underlying CMOS SOS switch technology opens the door to numerous RF and microwave applications. s witching RF and microwave signals is a fundamental function in all radio applications. Accordingly, there are a great


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    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


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    PDF 2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T

    SD2921

    Abstract: No abstract text available
    Text: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . PRELIMINARY DATA GOLD METALLIZATION NO THERMAL RUNAWAY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB GAIN @ 175 MHz .500 4 LFL M174 epoxy sealed ORDER CODE BRANDING SD2921


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    PDF SD2921 SD2921

    462 variable capacitor

    Abstract: capicitor arco 462 MS4775 capacitor 10 uf mica variable capacitor 200 watt hf mosfet
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4775 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • • • GOLD METALLIZATION NO THERMAL RUNAWAY COMMON SOURCE CONFIGURATION


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    PDF MS4775 MS4775 205nH 600nH 175MHz MSC0897 462 variable capacitor capicitor arco 462 capacitor 10 uf mica variable capacitor 200 watt hf mosfet

    arco 404

    Abstract: 200 watt hf mosfet MS4600 VARIABLE capacitor 300WPEP 100 watt hf mosfet
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4600 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • • • GOLD METALLIZATION NO THERMAL RUNAWAY COMMON SOURCE CONFIGURATION


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    PDF MS4600 MS4600 360nH 1000pF 330pF MSC0916 arco 404 200 watt hf mosfet VARIABLE capacitor 300WPEP 100 watt hf mosfet

    arco 462 capacitor

    Abstract: No abstract text available
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies GOLD METALLIZATION NO THERMAL RUNAWAY


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    PDF MS4500 600nH 205nH MS4500 150MHz 175MHz MSC0879 arco 462 capacitor

    chip capicitor

    Abstract: Unelco
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies GOLD METALLIZATION NO THERMAL RUNAWAY


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    PDF MS4775 600nH 205nH 175MHz MSC0897 chip capicitor Unelco

    Untitled

    Abstract: No abstract text available
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies GOLD METALLIZATION NO THERMAL RUNAWAY


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    PDF MS4750 600nH 205nH 150MHz MSC0915

    D 1427

    Abstract: transistor C 945 945 TRANSISTOR transistor 945 transistor d 945 m243 SD57060 transistor G 945
    Text: SD57060 RF & MICROWAVE TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs TARGET DATA . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION • Pout = 60 W with 11.5 dB gain @ 945 MHz . BeO FREE PACKAGE DESCRIPTION The SD57060 is a common source N-Channel


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    PDF SD57060 SD57060 022142A D 1427 transistor C 945 945 TRANSISTOR transistor 945 transistor d 945 m243 transistor G 945

    capacitor 10 uf

    Abstract: arco 462 capacitor
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies GOLD METALLIZATION NO THERMAL RUNAWAY


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    PDF MS4750 600nH 205nH 150MHz MSC0915 capacitor 10 uf arco 462 capacitor

    1 M pf capacitor

    Abstract: No abstract text available
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies GOLD METALLIZATION NO THERMAL RUNAWAY


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    PDF MS4775 600nH 205nH 175MHz MSC0897 1 M pf capacitor

    1 M pf capacitor

    Abstract: capacitor 10 uF MS4500
    Text: • m m RF Products m Micmsemi Progress Powered by Technology 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Featuies GOLD METALLIZATION NO THERMAL RUNAWAY


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    PDF MS4500 600nH 205nH MS4500 150MHz 175MHz MSC0879 1 M pf capacitor capacitor 10 uF