MICROWAVE TRANSDUCER Search Results

ATP10K100M

Abstract: 100w1000 Amplifier Research LA250
Contextual Info: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation

MBG-1026

Abstract: m7420A m7437 MBG-1025 MBG-1156 MBG-1014 MBG-1141 MBG-1126 MBG-1154 MBG-1152
Contextual Info: "!73 the complete microwave solution BAW Delay Lines Teledyne’s Bulk Acoustic Wave BAW Product Line has been producing BAW delay devices since the early 1960’s. Over the years, Teledyne Microwave has constantly improved BAW technology and is currently the world’s only supplier of microwave bulk acoustic wave delay devices.

Contextual Info: A Higher Level of Performance Data Sheet G1 Microwave Switch Series Auto Spray Cleaner For more information, please visit > www.hawkmeasure.com > Overview Auto Spray Cleaner Sultan G1 Microwave AcousticSwitch Wave Series Series User Guide Concept Terminology Reference & Details

piezoelectric crystals

Abstract: microwave transducer dispersive saw dispersive filter
Contextual Info: Spectrum Microwave White Paper January 2010 Specifying the Proper SAW Filter Spectrum Microwave offers a wide range of high-quality standard and custom SAW filter product solutions, designed and manufactured utilizing state of the art semiconductor fabrication

westcode scr

Abstract: toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR
Contextual Info: 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power Conversion Products Our valued suppliers Click on the supplier name below to visit their storefront on www.rell.com Richardson Electronics’ RF, Wireless & Power Division designs and distributes

Ericsson microwave antenna 0.6

Abstract: ericsson PARABOLIC antenna
Contextual Info: MICROWAVE : PARABOLIC RADIO RELAY ANTENNAS PARABOLIC RADIO RELAY ANTENNAS Box 22 04401 Järvenpää Finland Tel. +358 9 2790 120 Fax +358 9 2910 210 http://www.aerial.fi aerial@aerial.fi MICROWAVE : PARABOLIC RADIO RELAY ANTENNAS Table of contents Introduction

BFY182

Contextual Info: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • Hermetically sealed microwave package • fT = 8GHz F = 2.4dB at 2GHz • esa Space Qualified

BFY182

Contextual Info: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz •

Contextual Info: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 6,5 GHz F = 3 dB at 2 GHz 4

motion sensor doppler

Abstract: microwave transmitter 10GHz microwave motion sensors knock alarm doppler sensor microwave motion sensor microwave proximity sensor doppler microwave transceiver microwave transceiver water flow doppler
Contextual Info: A higher level of performance Data Sheet Microwave Smart Switch Series - Beam blockage detection - Doppler movement / Solid flow detection Principle of Operation Beam Blockage A beam of microwave energy passes from a sender to a separate receiver in bursts approximately 200 times per second.

BFY181

Contextual Info: BFY181. HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.2 dB at 2 GHz

microwave transistor bfy193

Contextual Info: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 8 GHz F = 2.3 dB at 2 GHz 4

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •

BFY193

Abstract: BFY183
Contextual Info: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz

BFY181

Contextual Info: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz

Q62702F1609

Contextual Info: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz

microwave transistor bfy193

Abstract: BFY193
Contextual Info: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • Space Qualified

A03 transistor

Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
Contextual Info: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

Contextual Info: BFY183 HiRel NPN Silicon RF Transistor •     4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz

BFy 90 transistor

Contextual Info: BFY 183 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified

A03 transistor

Abstract: BFY280
Contextual Info: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥

Contextual Info: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor  For low noise, high-gain amplifiers up to 2GHz.  For linear broadband amplifiers  Hermetically sealed microwave package   4 3 1 2 fT= 6,5 GHz F = 3 dB at 2 GHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz

marking K "micro x"

Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz