MIL NPN HIGH VOLTAGE TRANSISTOR 500V Search Results

npn triple diffused transistor 500v 8a

Contextual Info: Mil =X= mi SEME BUL65B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE

LAB 250 LB

Abstract: alc100
Contextual Info: Mil =X= mi SEME BUL63B LAB MECHANICAL DATA Dimensions in mm 2 .1 8 0 .086 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE

LAB 250 LB

Contextual Info: Illl = & = Illl SEME BUL53B-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA • CERAMIC SURFACE MOUNT PACKAGE :- ► , • FULL MIL/AEROSPACE TEMPERATURE RANGE 2.0 3.5 < ► 4— * 9'f <-

MIL npn high voltage transistor 500V

Contextual Info: Mil = ^ = INI BUL52AFI SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3

Semefab

Abstract: MIL npn high voltage transistor 1000V
Contextual Info: Mil =X= mi SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , 1.3 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: Mil = ^ = INI BUL55B SEME LAB MECHANICAL DATA Dimensions in mm f* 10.2 -►, 4.5 f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: Mil = ^ = IN I BUL53B SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: Mil =X= mi SEME BUL52A LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , r*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE

Contextual Info: Illl Illl BUL53B-SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11 .fi • CERAMIC SURFACE MOUNT PACKAGE —*i 3.0 ri-H 0.25 • FULL MIL/AEROSPACE TEMPERATURE RANGE • SCREENING OPTIONS FOR MILITARY AND

AFPE214325

Abstract: FPG-PRT-S matsua stepping motors
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AFP0801

Contextual Info: smallPLC_015-074.QX 2004.6.16 2:53 PM Page 33 FP0 Suitable for installation virtually anywhere. • Features I/O10 points Up to 128 I/O 1. Measures only W25 ҂ H90 ҂ D60 mm 2. Expandable 128 points by adding three units. This PLC is a stacking expansion type

panasonic inverter manual vf 200

Abstract: panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z
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laser range finder schematics

Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
Contextual Info: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals

SDT55456

Abstract: SDT55472 SDT55560 to63 400v
Contextual Info: Devices. Inc VERY HIGH VOLTAGE, HIGH CURRENT CHIP N UM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:

NPN Transistor 15A 400V to3

Abstract: 2N6563 350V transistor npn 15a 2N6547 2N6561 JAN2N6546 SDT13301-SDTI3305 transistor 500v 0.5a transistor npn 10mhz 500v S65C
Contextual Info: ^/òlitron [^ ©tSDCT ©ÄTTÄIL Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUM BER NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available

ic 7905

Abstract: transistor 7905 7905 7904 7905 a 7905 IC vbe 10v, vce 500v NPN Transistor VCB-600V chip die npn transistor
Contextual Info: g Xnooab l^bo0„^ STX 7904 /¡2905CHIP HIGH VOLTAGE NPN TRANSISTOR MESA PASSIVATED CONTACT METALLIZATION Base/Emitter: Collector: > 30,000 A Aluminum > 2,000 A Evaporated Gold ASSEMBLY RECOMMENDATIONS Contact Area: .014 x .018 PARAMETER TEST CONDITIONS *

MIL npn high voltage transistor 1000V

Abstract: SDT802 NPN Transistor VCEO 1000V
Contextual Info: «9 y) ir earn® Oevices. Inc. VERY HIGH VOLTAGE CHIP NUMBER NPN PASSIVATED POWER TRANSISTOR CONTACT METALLIZATION Base an d emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel Silver” also av ailab le) Also av ailab le on:

NPN Transistor 600V

Abstract: 2N5466 2N5468 JAN2N3902 JAN2N5157 SDT401 SDT430
Contextual Info: ^Jolitran IF > fö @ lü J T r © A T T M ,® < Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER FORMERLY 42 dH CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

ocs03

Abstract: JAN2N5664 JAN2N5667 SDT40301 SDT40304 wire CAV aluminum 1u 400v
Contextual Info: Contran « » © T T ©ÄTTM= Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER (FORMERLY 40 CONTACT METALLIZATION A Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

tf 115 250v 2a

Abstract: BUL53B
Contextual Info: BUL53B–SM SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA 11.5 2.0 0.25 3.5 1 3.0 3 • FAST SWITCHING tf = 100ns 9.0 1.5 15.8 4.6 3.5 2 • HIGH ENERGY RATING FEATURES 8.5 TO220 Ceramic Surface Mount Package

Contextual Info: 8368602 SOLITRON DEVICES INC 95D 02 8 4 7 TS DE IF>Ca [DmJ Tr ©ÄTTM,®© Devices, Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 40 CHIP N U M BER CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum

Contextual Info: INI INI SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3 • HIGH VOLTAGE

Contextual Info: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)

Contextual Info: INI = ^ = INI SEME BUL62A LAB MECHANICAL DATA Dimensions in mm inches 2.18(0.086) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE