MITSUBISHI COLT Search Results

Contextual Info: MITSUBISHI TRANSISTOR MODULES ? QM200DY-24B { HIGH POWER SWITCHING USE I _ INSULATED TYPE f QM2000Y-24B Collector current. 200A Coltector-emitter voltage. 1200V • hFE DC current gain. 750

QM100TF-HB

Abstract: QM100TF 100TF-HB
Contextual Info: ! QM100TF-HB \i MITSUBISHI TRAN SISTOR M ODULES I | HIGH POWER SWITCHING USE _ iNSULATED TYPE QM 100TF-HB • lc • V cex Collector c u rre n t. 100A Coltector-emitter v o lta g e . 600V • h FE

L302A

Abstract: all transistor mitsubishi air conditioner
Contextual Info: f MITSUBISHI TRANSISTOR MODULES } QM15TD-H I g MEDIUM POWER SWITCHING USE _ I INSULATED TYPE QM15TD-H . 15A Collector current Collector-emitter voltage. 600V DC current gain . 75 • Ic

8203a

Abstract: Mitsubishi transistor qm15kd-hb QM15KD
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15KD-HB • lc • Vcex • hre Collector current. 15A Collector-emitter voltage. 600V DC current gain. 250

qm150hy-h

Contextual Info: MITSUBISHI TRANSISTOR MODULES i QM150HY-H j HIGH POWER SWITCHING USE ! INSULATED TYPE | QM150HY-H • Ic • Vcex Collector current. 150A Collector-emitter voltage. 600V • hFE DC current gain.75

QM10KD-HB

Abstract: EM- 546 motor IO741 t15Q Mitsubishi transistor QM10 QM10K
Contextual Info: ! MITSUBISHI TRANSISTOR MODULES I } QM10KD-HB I } ; ? MEDIUM POWER SWITCHING USE j ; INSULATED TYPE } QM10KD-HB • Ic Collector current. 10A Collector-emitter voltage. 60 0 V • hFE DC current gain. 250

diode t25 4 L8

Abstract: diode t25 4 HO
Contextual Info: MITSUBISHI TRANSISTOR M O D U LES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE • Ic • Vcex Collector current.15A Coliector-emitter voltage.1000V • hFE DC current gain . 75 • Insulated Type

diode I92

Contextual Info: ! MITSUBISHI TRANSISTOR MODULES j QM400HA-24B I HIGH POWER SWITCHING USE ! INSULATED TYPE ï QM400HA-24B • Ic • Vc e x Collector current.400A Col lector-emitter voltage.1200V • hFE DC current gain. 750

M6271

Contextual Info: MITSUBISHI STANDARD LINEAER IC M6270X,M6271X, M6272X,M6273X,M6274XML/SL VOLTAGE DETECTING, SYSTEM RESETTING IC SERIES GENERAL DESCRIPTION The M627XXML/SL is a voltage threshold detector designed for detection of a supply voltage and generation of a system

HD 4480 LCD

Abstract: amplitude modulation ic,s HD 4480 44024 mitsubishi colt mitsubishi colt pin M51403FP M51404AFP 406MHZ IC cd 4020 pin diagram
Contextual Info: MITSUBISHI ICs TV M51404AFP SECAM SYSTEM CHROMA SIGNAL PROCESSOR DESCRIPTION The M51404AFP is a semiconductor integrated circuit for SEC A M system chroma signal processing. This IC contains a limiter amplifier, PAL/SECAM system switch and detector circuit.

SiC mitsubishi

Abstract: VC90
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM100CY-H • lc • Vcex Collector c u rre n t. 100A • hFE DC current g a in . 75 Collector-em itter v o lta g e . 600V

transistor SE 431

Abstract: QM150DY-2H transistor 431 N QM15
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • lc • V cex • hFE Collector c u rre n t. 150A Collector-em itter vo lta g e . 1000V DC current g a in . 75

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM 15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15HA-H • Ic • Vcex Collector c u rre n t. 15A Collector-em itter v o lta g e . 600V • hFE DC current g a in . 75

Contextual Info: MITSUBISHI LSIs Preliminary S peeD Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The MH32/64R18BUP is the Direct R am bus R IM M ™ module. This consists of eight/sixteen industry 4Mx18 Direct Rambus DRAM Direct

RF POWER TRANSISTOR NPN

Abstract: TRANSISTOR 2SC2538 equivalent 2SC2538 8D2T hu cj voe
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC2538 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on V H F band mobile radio applications. FEATURES • • • High power gain: Gp e ^ 10dB

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó

RDRAM cross reference

Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The MH32/64R18BUP is the Direct Rambus RIMM™ module. This consists of eight/sixteen industry 4Mx18 Direct Rambus DRAM Direct RDRAM™ in M-CSP and one industory standard

ecg semiconductors master replacement guide

Abstract: transistor SMD marked RNW th 20594 TRANSISTOR si 6822 MIL-STD-202F-201A CT 1975 sam transistors br 6822 sun hold ras 2410 relay TRANSISTOR SMD MARKING CODE jg Mist Ultrasonic Humidifier
Contextual Info: RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY 2. SEMICONDUCTOR RELIABILITY RELIABILITY OF SEMICONDUCTOR DEVICES I. RELIABILITY OF SEMICONDUCTOR DEVICES 1. OUR PHILOSOPHY OF QUALITY Since its foundation, Mitsubishi Electric has been seeking a philosophy of extending the business and contributing the society with high

Contextual Info: MITSUBISHI LSIs Some contents are subject to change without notice. MH32/64R18BUP-408,458,536 DESCRIPTION The M H 32/64R 18B U P is the Direct Rambus RIM M ™ module. This consists of eight/sixteen industry 4M x18 Direct Rambus DRAM Direct R D R A M ™ ¡n M -C S P and one industory standard

inverter "SM 1600" output 48 V

Abstract: inverter SM 1600 output 48 V E 446
Contextual Info: a | MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR C T 15S M -24 GENERAL INVERTER • UPS USE C T15SM -24 OUTLINE DRAWING Dimensions in mm 15-9MAX, 4.5 1 .5 ;T , S o t . r ii 2 0 .0 1 /v ÍÍ J -H 2 1 .0 T (?) 4 .4 2 Iin a 5 .4 5 (3': 5 .4 5 0 .6 2 .8 J) GATE

F82M1

Abstract: mitsubishi MF82M1 F82M1-T7D
Contextual Info: MITSUBISHI M EM O R Y CARD F L A S H M E M O R Y CAR DS 8 /1 6 -bit D ata Bus Flash M e m o ry C ard MF82M1 G9D A T X X MF84M1 G9D A T X X MF88M1 G9DATXX MF810M G9DATXX MF816M G9DATXX MF820M G9DATXX MF82M1 77 D A T X X Connector Type Two-piece 68-pin IT ”

peugeot 206

Abstract: vw polo volvo TOYOTA TOYOTA COROLLA peugeot renault vw transporter renault megane citroen c5
Contextual Info: Nackstödsfäste med flexarm för Tablet DVD För skärm med hål undertill för skruvfäste, sk kamerafäste “-gänga Till monteringen har använts ett nackstödsfäste med flexarm för skärm med kamerafäste. Tablet DVD på plats. Innermått Yttermått

peugeot 206

Abstract: volkswagen renault mitsubishi L200 NISSAN renault megane peugeot peugeot 406 peugeot 307 renault scenic
Contextual Info: Nackstödsfäste för Tablet DVD. För skärm med skruvfäste på undersidan, sk kamerafäste med tum “ -gänga. Till monteringen har använts ett nackstödsfäste för skärm med kamerafäste. Tablet DVD på plats. Multimedia och underhållning i bilen

Contextual Info: ETE D • b5 4TÔ 20 0014^=1 T ■ ' ; » m u B z s H H n ^ P T ^ P K o “ M IT S U B IS H I L S Is M 5 M 8 2 C 5 4 P / F P /J . C M O S PR O G R A M M A B L E IN T E R V A L T IM E R DESCRIPTION The M5M82C54P is a programmable general-purpose timer device developed by using the silicon-gate CMOS process.