MITSUBISHI PART MARKING Search Results

mitsubishi marking

Abstract: mitsubishi part marking
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES MARKING SPECIFICATIONS 4.4 CUSTOMIZED MARKING Mitsubishi Electric can also produce devices with clientspecified part numbers, logos, etc. on a special order basis. Please contact your rep for detail. Mar.’98

THYRISTOR sct 280 04

Abstract: 80173-111-01 80173-111-01 hp 2521 MITSUBISHI GATE COMMUTATED GU-D04 THYRISTOR MAR 615 hp 2521 CS thyristor cs 6-25 FGO100A-130DS FGC400A-130DS GCU04AA-130
Contextual Info: MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT GCU04AA-130 HIGH POWER INVERTER USE PRESS PACK TYPE 6. GCT PART Type name: FGGM0A-13ÖDS (l)MAXIMÜM RATINGS_ No CONDITIONS SYMBOL Repetitive peak reverse voltage VOLTAGE UNIT 6500 V

MH8S64AQFC -7

Abstract: M5M51008CFP-70HI sop-32 pin Shipping Trays S1912 M5M5V108DFP-70HI jeida dram 88 pin M5M465165 MH8S64AQFC-6 MH8S64DBKG-6 PC-100
Contextual Info: Please Read Notes First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents New Publications MCP Multi Chip Package Standard Discrete DRAM PC Cards Standard DRAM Modules IC Package SRAM Flash Memory Quality Assurance and Reliability Testing

cm300dx-12a

Contextual Info: MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM300DX-12A IC ….……………….……. 300A VCES …………….….…. 600V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant

NTC Thermistor 120

Contextual Info: MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM200DX-24A IC ….……………….……. 200A VCES …………….….…. 1 2 0 0 V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant

Contextual Info: MITSUBISHI IGBT MODULES CM300DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM300DX-24A IC ….……………….……. 300A VCES …………….….…. 1 2 0 0 V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant

Contextual Info: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

c2e1 marking

Contextual Info: MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM150DX-24A IC ….……………….……. 150A VCES …………….….…. 1 2 0 0 V ●Flat base Type ●Copper base plate non-plating ●RoHS Directive compliant

Contextual Info: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

T32BS8WG

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Mitsubishi Stacked CSP

Abstract: mitsubishi marking FA18 transistor
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Mitsubishi Stacked CSP

Abstract: mitsubishi marking
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Hitachi Stacked CSP

Abstract: Mitsubishi Stacked CSP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

67-PIN

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

M6MGD137W33WG

Abstract: mitsubishi top marking
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.

Mitsubishi RAM

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Hitachi Stacked CSP

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

E1070

Abstract: BEIJER E1070 STR 6053 beijer panel mac str w 6053 mitsubishi mac 50 interface configuration washing machine service manual FOR sharp STR w 6053 n E1000 SHARP 44
Contextual Info: MITSUBISHI ELECTRIC Mac E Series Human Machine Interface Installation Manual E1070 Art. no.: 169276 10 02 2006 Version A MITSUBISHI ELECTRIC INDUSTRIAL AUTOMATION Foreword Installation manual for the E1000 series operator terminals Foreword The E1000 operator terminal is developed to satisfy the demands of humanmachine communication. Built-in functions such as displaying and controlling

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101