MITSUBISHI VCB Search Results

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Welders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 5.4 M4 M6 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES

Mitsubishi transistor

Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
Contextual Info: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm OC BO - m -M - - < EO ó ÓE BX M4 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES

S A5B

Abstract: A10B A11B M66223FP renesastechnologycorp
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SC738

Abstract: 2SC7 FT440
Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL TRANSISTOR 2SC738 FOR FM RADIO HIGH FREQUENCY AMPLIFY, FREQUENCY EXCHANGE, LOCAL OSCILATION APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC738 is a resin sealed silicon NPN epitaxial type transistor

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4258 FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4258 is a super mini package resin sealed silicon NPN epitaxial Unit:mm OUTLINE DRAWING

2SC4266

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4266 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4266 is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING frequency voltage amplify implication.

2SC2320L

Abstract: h a 431 transistor RO10K
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC2320L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC2320L is a silicon NPN epitaxial type transistor designed for low OUTLINE DRAWING Unit:mrn < 5.6MAX

transistor marking 2A H

Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.

2SA999L

Abstract: 2SA999 trnsistor
Contextual Info: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SA999L FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA999L is a silicon PNP epitaxial type trnsistor designed for low Unftrmm OUTLINE DRAWING ^ 5.6MAX

2SG3053

Abstract: 2SC3053
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SG3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING „ „

semiconductor relay 6v

Abstract: 2SA1287 2SC3247
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1287 FOR RELAY DRIVE, POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1287 is silicon PNP epitaxial type transistor. Designed with high Voltage, high collector current, dissipation and high

2SC5170

Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5170 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5170 is a silicon NPN epitaxial type transistor. It is designed for

2SC5169

Abstract: low noise transistor table
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5169 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SCS169 is a silicon NPN epitaxial type transistor. It Is designed for Unit:mm OUTLINE DRAWING

2sc1914

Abstract: 2SC1914A
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1914A FOR LOW FREQUENCY VOLTAGE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1914A is a silicon NPN epitaxial type high voltage transistor OUTLINE DRAWING Unit: mm ¿ 5.6MAX

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1399 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1399 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING ¿5.1 MAX

2sc710 transistor

Abstract: 2sc710 transistor 2SC710 2SC710 C 2SC7
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC710 FOR FM • AM RADIO HIGH AND MEDIUM FREQUENCY AMPLIFY APPUCATION SIUCON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC710 is a resin sealed silicon NPN epitaxial type transistor OUTLINE DRAWING UniCmm

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3580 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC3580 is a silicon NPN epitaxial type transistor. Unit: mm ¿5.1M A X Complementary with 2SA1398.

2SC3581

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3581 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3581 is a silicon NPN epitaxial type transistor designed for high OUTLINE DRAWING Unitrmm ¿5.1 MAX

2sa1299

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1299 FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1299 is silicon P N P epitaxial type transistor designed for low Unit: mm OUTLINE DRAWING 4.3MAX

2SC1708

Abstract: 2SC170 2SC1708A
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1708A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1708A is a silicon NPN epitaxial type high voltage low frequency Unitmm OUTLINE DRAWING t S.6MAX

2SC2312

Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Contextual Info: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating

2sa1929

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for

2sa1368

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1368 FOR HIGH VOLTAGE DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1368 is a silicon PNP epitaxial type transistor. It designed with OUTLINE DRAWING umt mm high collector dissipation, high voltage.