GB30RF60K
Abstract: single phase inverter
Text: GB30RF60K Vishay High Power Products IGBT PIM Module, 27 A FEATURES • • • • • • • • • • • ECONO2 PIM PRODUCT SUMMARY Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft
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GB30RF60K
18-Jul-08
GB30RF60K
single phase inverter
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GB15RF60K
Abstract: No abstract text available
Text: GB15RF60K Vishay High Power Products IGBT PIM Module, 17 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft
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GB15RF60K
18-Jul-08
GB15RF60K
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Untitled
Abstract: No abstract text available
Text: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27303
GB30RF60K
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Untitled
Abstract: No abstract text available
Text: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27306
GB15RF60K
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the calculation of the power dissipation for the igbt and the inverse diode in circuits
Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
Text: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3
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CH-5600
5SYA2053-02
the calculation of the power dissipation for the igbt and the inverse diode in circuits
"the calculation of the power dissipation for the igbt and the inverse diode in circuits"
ABB IGBT
ABB IGBT inverter
5SYA2042
5sna 1200e330100
transistor book
5SYA2043
ABB IGBT part number explanation
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Untitled
Abstract: No abstract text available
Text: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System VRRM Fast Recovery Diode = 2200 V VCES IGBT = 800 V VCES = 700 V IDAVM00 = 50 A IC80 = = 80 A IFSM45 = 000 A VF25 = 3. V VCE25 = 3.0 V
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135-22NO1
IDAVM100
IFSM45
VF125
VCE125
VUB135-22NO1
E72873
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Untitled
Abstract: No abstract text available
Text: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recovery Diode IGBT VRRM = 2200 V VCES = 1800 V VCES = 1700 V IDAVM100 = 150 A IC80 = 80 A IFSM45 = 1100 A VF125 = 3.11 V VCE125 = 3.0 V =
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135-22NO1
IDAVM100
IFSM45
VF125
VCE125
VUB135-22NO1
E72873
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N-channel MOSFET to-247
Abstract: 25N40 mosfet 400V
Text: UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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25N40
25N40
O-247
QW-R502-621
N-channel MOSFET to-247
mosfet 400V
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VUB135-22NO1
Abstract: vub135 E72873 135-22NO1
Text: VUB 135-22NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recovery Diode IGBT VRRM = 2200 V VCES = 1800 V VCES = 1700 V IDAVM100 = 150 A IC80 = 80 A IFSM45 = 1000 A VF125 = 3.11 V VCE125 = 3.0 V =
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135-22NO1
IDAVM100=
IFSM45
VF125
VCE125
VUB135-22NO1
E72873
VUB135-22NO1
vub135
E72873
135-22NO1
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GB30RF60K
Abstract: ntc 901
Text: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27303
GB30RF60K
12-Mar-07
GB30RF60K
ntc 901
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 25N40 Preliminary Power MOSFET 400V, 26A N-CHANNEL POWER MOSFET DESCRIPTION The UTC 25N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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25N40
25N40
QW-R502-621
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Untitled
Abstract: No abstract text available
Text: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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I27306
GB15RF60K
E78996
12-Mar-07
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RTR020P02
Abstract: 028e PMOSFET
Text: SPICE PARAMETER RTR020P02 by ROHM TR Div. * RTR020P02 PMOSFET model * Date: 2006/09/20 * This model includes a diode between drain and source. *D G S .SUBCKT RTR020P02 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6
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RTR020P02
RTR020P02
0000E-6
028E-6
000E-3
480E-3
0000E6
00E-12
028e
PMOSFET
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12v inverter
Abstract: The sine wave inverter
Text: 7MBR50SB140 IGBT Modules IGBT MODULE S series 1400V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier
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7MBR50SB140
Sto25
12v inverter
The sine wave inverter
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7MBR50UB120
Abstract: dc ac inverter schematic igbt Power INVERTER schematic circuit sine wave inverter rg3380 DC DC converter 5v to 200V ic 7MBR50u
Text: 7MBR50UB120 IGBT Modules IGBT MODULE U series 1200V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier
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7MBR50UB120
00V/div
7MBR50UB120
dc ac inverter schematic igbt
Power INVERTER schematic circuit
sine wave inverter
rg3380
DC DC converter 5v to 200V ic
7MBR50u
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7MBR100UB120
Abstract: No abstract text available
Text: 7MBR100UB120 IGBT Modules IGBT MODULE U series 1200V / 100A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier
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7MBR100UB120
00V/div
7MBR100UB120
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mj 1504
Abstract: uu 10.5 93x16
Text: UU Cores ʳ UU Cores F EMI suppression in mains filters. Power Inductor. H z z Shapes A Application F 2 Mn-Zn Cores D C B Dimensions and Characteristics UU 10.5 x 5 12 x 3.9 15 x 6.4 15.7 x 6 15.7 x 6.4 A 9.8±0.2 10.5±0.4 12.0±0.5 15.0±0.4 15.7±0.5 15.7±0.5
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05min
QS9000
mj 1504
uu 10.5
93x16
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7MBR75UB120
Abstract: 7MBR75UB-120 12 volt dc to 120 volt ac Inverter schematic
Text: 7MBR75UB120 IGBT Modules IGBT MODULE U series 1200V / 75A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier
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7MBR75UB120
00V/div
7MBR75UB120
7MBR75UB-120
12 volt dc to 120 volt ac Inverter schematic
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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OCR Scan
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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smd diode UJ 64 A
Abstract: smd diode marking UJ M600 AN-994 IRL540S SMD-220 smd marking LG
Text: International Rectifier PD-9.910 IRL540S HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V 175°C Operating Temperature
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OCR Scan
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IRL540S
SMD-220
150KSÃ
smd diode UJ 64 A
smd diode marking UJ
M600
AN-994
IRL540S
smd marking LG
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smd diode wv4
Abstract: SMD wv4 Diode BFT smd wv4 diode wv4 smd marking WV4 smd diode WV1 IRL540 IRL540S J-10
Text: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling
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OCR Scan
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IRL540
T0-220
O-220
smd diode wv4
SMD wv4
Diode BFT smd
wv4 diode
wv4 smd
marking WV4
smd diode WV1
IRL540S
J-10
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marking WV4
Abstract: smd diode wv4 1RL540 SMD wv4 DIODE smd marking WV4 smd diode WV1 diode wv4 jb0 marking DIODE 28A Diode BFT smd
Text: PD-9.563C International ÜS Rectifier IRL540 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at Vgs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling
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OCR Scan
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PDF
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IRL540
T0-220
O-220
marking WV4
smd diode wv4
1RL540
SMD wv4
DIODE smd marking WV4
smd diode WV1
diode wv4
jb0 marking
DIODE 28A
Diode BFT smd
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Untitled
Abstract: No abstract text available
Text: International ik » i Rectifier uassMsa ooisaba 53b HEXFET Power MOSFET INTERNATIO N AL R E C T IF IE R • • • • • • • IN R PD-9.910 IR L 5 4 0 S Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive
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SMD-220
IRL540S
4AS54S2
0D15673
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k 3525 MOSFET
Abstract: No abstract text available
Text: HE D I Data Sheet No. PD-9.523B MâssMsa QOüôaaM g I INTERNATIONAL T-35-25 RECTIFIER INTERNATIONAL RECTIFIER P O O R I REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFR120 IRFR121 IRFU1SO IRFU121 N-CHANNEL Product Summary
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T-35-25
IRFR120
IRFR121
IRFU121
IRFU12Ã
IRFR120)
IRFU120)
k 3525 MOSFET
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