MJ 14 X 1,5 - 4 Search Results
MJ 14 X 1,5 - 4 Price and Stock
United Chemi-Con Inc EKXJ161ELL151MJ40SAluminum Electrolytic Capacitors - Radial Leaded 160VDC 150uF Tol 20% 10x40mm AEC-Q200 |
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EKXJ161ELL151MJ40S |
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Wima MKX14W15603F00MJ00Safety Capacitors MKP-X1 R 5600 pF 440 VAC 5x11x13 PCM 10 |
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MKX14W15603F00MJ00 |
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Wima MKX14W31506A00MJ00Safety Capacitors MKP-X1 R 0.15 uF 440 VAC 9x19x31.5 PCM 27.5 |
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Wima MKX14W31005D00MJ00Safety Capacitors MKP-X1 R 0.1 uF 440 VAC 7x16.5x26.5 PCM 22.5 |
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MKX14W31005D00MJ00 |
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Wima MKX14W31505D00MJ00Safety Capacitors MKP-X1 R 0.15 uF 440 VAC 7x16.5x26.5 PCM 22.5 |
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MKX14W31505D00MJ00 |
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MJ 14 X 1,5 - 4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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eon f80
Abstract: 9T16 1850NM ICM50
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25T60 50-06P1 eon f80 9T16 1850NM ICM50 | |
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally |
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Semipack skfh 40
Abstract: si 13001 Semipack skfh skfh Semipack 1 skfh thyristor tt 86 n 1800 tr 13001 SKFH40 SKFH60 SKKD160M
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SKFH110/04. SKFH110/10. SKKD160 11000A2s Tvj-130Â io-31 Tvr25Â Semipack skfh 40 si 13001 Semipack skfh skfh Semipack 1 skfh thyristor tt 86 n 1800 tr 13001 SKFH40 SKFH60 SKKD160M | |
TO-238
Abstract: JE23 FP1010
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OCR Scan |
SKLD20 Q0Q14b2 SKLD20F O-238 SKMD20F TO-238 JE23 FP1010 | |
BSM 225Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally |
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Gesamt-Verlust75 BSM 225 | |
BSM 15 GBContextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values |
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24TRANSISTORContextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally |
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BSM 15 GBContextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values |
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IF1400Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 16 KF6 - B1 55,2 M8 11,85 screwing depth max. 16 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 7 16 40 2,5 deep C2 53 18 G2 44 2,5 deep 57 E1 C2 C1 E2 E1 |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally |
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VAL-MS 350 VF
Abstract: FLT 350 ST PHOENIX FLT-35 CTRL09 FLASHTRAB FLT-35 FLT 100 N/PE VAL-MS 230/3 1 FM
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1-100VF 1-100VF/FM 18/1-8-BU kA/440 80tra VAL-MS 350 VF FLT 350 ST PHOENIX FLT-35 CTRL09 FLASHTRAB FLT-35 FLT 100 N/PE VAL-MS 230/3 1 FM | |
data sheet for m1104 rf transistor
Abstract: m1104 rf transistor TAG 8926 transistor m1104 M1104 B57087 ntc k277 thermistor k276 B57861 siemens NTC DIN iso 13715
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DLS 07.05.1998 BSM 400 GA 170 DLS vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values |
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SKiiP 82 AC 12 i t 1
Abstract: SKiiP 83 AC 12 i t 1 SKiiP 83 AC 12 i t semikron skiip 82 ac SKiiP 82 AC 12 SKiiP 82 AC 12 i t semikron skiip 82 Ac 12 ct3 "current sensor" semikron skiip 83 semikron skiip 82 Ac 12 i
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values |
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GA170DLContextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values |
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Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> bbS3cl31 DOETfciflM 430 BLY88C APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is |
OCR Scan |
BLY88C bb53T31 | |
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally |
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