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    MJ 14 X 1,5 - 4 Search Results

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    MJ 14 X 1,5 - 4 Price and Stock

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    United Chemi-Con Inc EKXJ161ELL151MJ40S

    Aluminum Electrolytic Capacitors - Radial Leaded 160VDC 150uF Tol 20% 10x40mm AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics EKXJ161ELL151MJ40S
    • 1 $1.61
    • 10 $0.81
    • 100 $0.74
    • 1000 $0.57
    • 10000 $0.50
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    Wima MKX14W15603F00MJ00

    Safety Capacitors MKP-X1 R 5600 pF 440 VAC 5x11x13 PCM 10
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    Mouser Electronics MKX14W15603F00MJ00
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    • 10000 $0.23
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    Wima MKX14W31506A00MJ00

    Safety Capacitors MKP-X1 R 0.15 uF 440 VAC 9x19x31.5 PCM 27.5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MKX14W31506A00MJ00
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    • 10000 $0.77
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    Wima MKX14W31005D00MJ00

    Safety Capacitors MKP-X1 R 0.1 uF 440 VAC 7x16.5x26.5 PCM 22.5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MKX14W31005D00MJ00
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    Wima MKX14W31505D00MJ00

    Safety Capacitors MKP-X1 R 0.15 uF 440 VAC 7x16.5x26.5 PCM 22.5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MKX14W31505D00MJ00
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    MJ 14 X 1,5 - 4 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    eon f80

    Abstract: 9T16 1850NM ICM50
    Contextual Info: ECO-PACTM 2 IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet IC25 = 42.5 A VCES = 600 V VCE sat typ. = 2.4 V PSIG 50/06 PSI 50/06* PSIS 50/06* PSSI 50/06* LN 9 S18 A1 JK 10 OP 9 PSIG PSI L 9 PSI 50/06* PSIG 50/06 E 2 PSIS 50/06*


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    25T60 50-06P1 eon f80 9T16 1850NM ICM50 PDF

    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally


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    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally


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    Semipack skfh 40

    Abstract: si 13001 Semipack skfh skfh Semipack 1 skfh thyristor tt 86 n 1800 tr 13001 SKFH40 SKFH60 SKKD160M
    Contextual Info: Ifrms maximum values for continuous opïeration V rsm V rrm 130 A V 60A(94°C) | 130 A [ 300A Ifav (sin. 180; Tea58 ” «••°C; 50 Hz 160 A (86 °C) 60A(94°C) 300 A 160 A (86 °C) SKFH110/04. 400 800 SKFH 40/08 SKFH 60/08. SKFH110/08. SKKD 160 M08


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    SKFH110/04. SKFH110/10. SKKD160 11000A2s Tvj-130Â io-31 Tvr25Â Semipack skfh 40 si 13001 Semipack skfh skfh Semipack 1 skfh thyristor tt 86 n 1800 tr 13001 SKFH40 SKFH60 SKKD160M PDF

    TO-238

    Abstract: JE23 FP1010
    Contextual Info: SEMIKRON INC is E o I a i3 f c > b 7 3 i ' 0 7 _ V rs M V rrm Ifrms maximum value for continuous operation 40 A V Ifav (sin. 180; Tease = 85 °C; 50 Hz) 15,2 A 400 SKLD 20 F 04 SKM D 20 F 04 600 S KLD 20 F 06 SKM D 20 F 06 800 S KLD 20 F 08 SKM D 20 F 08


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    SKLD20 Q0Q14b2 SKLD20F O-238 SKMD20F TO-238 JE23 FP1010 PDF

    BSM 225

    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally


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    Gesamt-Verlust75 BSM 225 PDF

    BSM 15 GB

    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values


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    24TRANSISTOR

    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally


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    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally


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    BSM 15 GB

    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GB 170 DL 2,8 x 0,5 M6 22,5 22,5 22 ø6,4 16 6 7 1 2 3 28 28 93 20 5 4 106,4 6 7 1 3 5 2 4 23.04.1998 BSM 200 GB 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values


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    IF1400

    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 16 KF6 - B1 55,2 M8 11,85 screwing depth max. 16 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 7 16 40 2,5 deep C2 53 18 G2 44 2,5 deep 57 E1 C2 C1 E2 E1


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    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally


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    VAL-MS 350 VF

    Abstract: FLT 350 ST PHOENIX FLT-35 CTRL09 FLASHTRAB FLT-35 FLT 100 N/PE VAL-MS 230/3 1 FM
    Contextual Info: POWERSET BC/3+1-100VF POWERSET BC/3+1-100VF/FM Installation Instructions L-N MPB 18/1-8-BU VAL-MS 350. UN 230 V AC 230 V AC 230 V UC 440 V AC 50/60 Hz 350 V AC 260 V AC 50/60 Hz ≤ 1,5 kV ≤ 1,2 kV ≤ 1,5 kV 35 kA / 17,5 As / 305 kJ/Ω – 100 kA / 50 As /


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    1-100VF 1-100VF/FM 18/1-8-BU kA/440 80tra VAL-MS 350 VF FLT 350 ST PHOENIX FLT-35 CTRL09 FLASHTRAB FLT-35 FLT 100 N/PE VAL-MS 230/3 1 FM PDF

    data sheet for m1104 rf transistor

    Abstract: m1104 rf transistor TAG 8926 transistor m1104 M1104 B57087 ntc k277 thermistor k276 B57861 siemens NTC DIN iso 13715
    Contextual Info: Contents Index of Types 5 9 Selector Guide Applications 11 19 General Technical Information 23 Data Sheets 45 Standardized R/T Characteristics Mounting Instructions Quality Environmental Protection, Climatic Conditions Taping and Packing Symbols and Terms


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    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DLS 07.05.1998 BSM 400 GA 170 DLS vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung


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    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties


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    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values


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    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values


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    SKiiP 82 AC 12 i t 1

    Abstract: SKiiP 83 AC 12 i t 1 SKiiP 83 AC 12 i t semikron skiip 82 ac SKiiP 82 AC 12 SKiiP 82 AC 12 i t semikron skiip 82 Ac 12 ct3 "current sensor" semikron skiip 83 semikron skiip 82 Ac 12 i
    Contextual Info: SKiiP 82 AC 12 - SKiiP 82 AC 12 I Absolute Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1 Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C AC, 1 min. Values 1200 ± 20 95 / 65 190 / 130 – 40 . . . + 150 – 40 . . . + 125 2500


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    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 50 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally


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    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 200 GA 170 DL M6 28,5 22 23 16,1 13 1 2 4 5 ø6,4 3 24 20 29 93 106,4 2 1 5 3 23.04.1998 BSM 200 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values


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    GA170DL

    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values


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    Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> bbS3cl31 DOETfciflM 430 BLY88C APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


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    BLY88C bb53T31 PDF

    Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 75 GD 170 DL 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 3.81 19.05 18 19 1 2 3 4 17 5 6 7 3.81 16 8 9 15 10 11 12 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally


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